Data for reference binari-electronlett-30-909

Electrical characterisation of Ti Schottky barriers on n-type GaN,

S. C. Binari, H. B. Dietrich, G. Kelner, L. B. Rowland, K. Doverspike, D. K. Gaskill

Electronics Letters 30(11), 909 (1994).

This item is cited by the following items in the database:

  1. Research on GaN MODFET's
  2. Metal Contacts on α-GaN
  3. Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts
  4. XPS study of Au/GaN and Pt/GaN contacts
  5. Room Temperature Ohmic contact on n-type GaN using plasma treatment

Contributed by A submitted manuscript, on Thursday, July 18, 1996 4:27:26 PM

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