khan-electronlett-30-2175

Data for reference khan-electronlett-30-2175

Current Voltage Characteristic Collapse in Algan/GaN Heterostructure Insulated Gate Field Effect Transistors at High Drain Bias

MA Khan, MS Shur, QC Chen, et al.

Electronics Letters 30(25), 2175 (1994).

The authors describe the current/voltage characteristic collapse under a high drain bias in AlGaN/GaN heterostructure insulated gate field effect transistors (HIGFETs) grown on sapphire substrates. These devices exhibit a low resistance state and a high resistance state, before and after the application of a high drain voltage, respectively. At room temperature, the high resistance state persists for several seconds. The device can also be returned into the low resistance state by exposing it to optical radiation. Electron trapping in the gate insulator near the drain edge of the gate is a possible mechanism for this effect, which is similar to what has been observed in AlGaAs/GaAs HFETs at cryogenic temperatures.

Contributed by E. Hellman

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