Data for reference ping-electronlett-30-1895

Reactive Ion Etching of Gallium Nitride Using Hydrogen Bromide Plasmas

AT Ping, I Adesida, MA Khan, et al.

Electronics Letters 30(22), 1895 (1994).

The characteristics of the reactive ion etching (RIE) of gallium nitride (GaN) have been investigated using HBr, 1:1 HBr:Ar, and 1:1 HBr:H-2 plasmas. Etch rates were found to increase with plasma self-bias voltage for all gas mixtures exceeding 60nm/min at -400 V for pure HBr. Higher etch rates were obtained for pure HBr than for HBr mixtures with Ar and H-2. Chamber pressure was also found to slightly affect etch rates for the pressure ranges investigated. The anisotropy of etched profiles was found to improve with increasing pressure. Smooth etched surfaces are also demonstrated.

This item is cited by the following items in the database:

  1. Fabrication of GaN mesa structures
  2. Characterization of Pd Schottky barrier on n-type GaN
  3. High temperature characteristics of Pd Schottky contacts on n-type GaN
  4. Electron cyclotron resonance etching of III–V nitrides in IBr/Ar plasmas
  5. New plasma chemistries for etching GaN and InN: BI3 and BBr3

Contributed by E. Hellman

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