tansley-electronlett-20-1066

Data for reference tansley-electronlett-20-1066

Electron mobility in indium nitride

T. L. Tansley, C. P. Foley

Electronics Letters 20, 1066 (1984).

Measurements of the transport properties of RF sputtered polycrystalline films of indium nitride are presented. The maximum electron mobility measured is 5000 sq cm per Vs at 150 K, and the lowest electron concentrations obtained are 5 x 10 to the 16th per cu cm at 300 K falling to a constant value of 3 x 10 to the 16th in the range 30-150 K. These results are significantly better than those hitherto reported. The temperature dependence of mobility is attributed to ionized impurity scattered at low temperatures and space charge scattering at higher temperatures.

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Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1984ElL....20.1066T

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