Data for reference yu-ecsp-98-2-468PiezoelectricEffects in AlGaN/GaN Heterostructure Field Effect Transistors
E. T. Yu, P. M. Asbeck, S. S. Lau, G. J. Sullivan
Electrochemical Society Proceedings 98-2, 468 (1998).
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This item is cited by the following items in the database:
- 300°ree;C GaN/AlGaN Heterojunction Bipolar Transistor
Contributed by A submitted manuscript, on Wednesday, October 21, 1998 10:40:45 AM
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