singh-ecsp-96-186

Data for reference singh-ecsp-96-186

Growth of InGaN Films and InGaN/AlGaN multiple Quantum Wells Produced by Molecular Beam Epitaxy

R. Singh, T.D. Moustakas

Electrochemical Society Proceedings 96(11), 186 (1996).

This paper discusses the growth of InGaN alloys and their double heterostructures and quantum wells grown by MBE. Thick InGaN films with more than 30 % indium showed evidence of phase separation, as determined by X-ray diffraction and optical absorption studies. On the other hand, such immiscibility was not observed in thin InGaN layers grown as GaN/InGaN/GaN double heterostructures. MQWs exhibiting excellent RT PL were also grown.

Contributed by Raj Singh from 137.252.159.42 on Friday, January 31, 1997 3:47:26 PM

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