Data for reference binari-ecsma-96-409

Development of GaN-based FET Technology for High-Frequency and High-Temperature Applications

S. C. Binari

The Electrochemical Society Meeting Abstracts 96(1), 409 (1996).

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This item is cited by the following items in the database:

  1. The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor

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