kern-drm-6-1282

Data for reference kern-drm-6-1282

Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization

RS Kern, K Jarrendahl, S Tanaka, RF Davis

Diamond and Related Materials 6(10), 1282 (1997).

SiC growth kinetics, n- and p- type doping of SiC, AlN/SiC heterostructures and (AlN)x(SiC)1-x solid solutions.

Contributed by Kenneth Järrendahl from rd141.mte.ncsu.edu. on September 24, 1997 1:09:33 PM
Modified by Kenneth Järrendahl from pckejar.ifm.liu.se. on June 11, 1998 12:51:00 PM
Modified by Kenneth Järrendahl from pckejar.ifm.liu.se. on Tuesday, November 10, 1998 12:52:34 PM

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