janik-chemmat-10-1613

Data for reference janik-chemmat-10-1613

Nanocrystalline Aluminum Nitride and Aluminum/Gallium Nitride Nanocomposites via Transamination of [M(NMe2)3]2, M = Al, Al/Ga (1/1)

J. F. Janik, R. L. Wells, J. L. Coffer , J. V. St. John, W. T. Pennington, G. L. Schimek

Chemistry of Materials 10(6), 1613 (1998).

The picture emerging from the results and discussion is consistent with the existence of correlation between the chemical nature of the starting bimetallic Al/Ga-amide-imide precursors and the resulting make-up of the composites derived from them. The presence in an initial reaction mixture of three different species with distinct bonding situations, Ga-N(Me2)-Ga, Al-N(Me2)-Al, and mixed-metal Ga-N(Me2)-Al, seems to lead upon transamination/deamination with NH3 to a precursor preserving these three bonding domains, now, via transaminated nitrogen bridges. The following pyrolysis leads to elimination-condensation, to a large degree, separately within these three domains, and formation at appropriate temperatures of three distinct hexagonal phases evolved from them. These phases are consistent with AlN, GaN, and AlGaN (Al/Ga = 1/1) solid solution of aluminum/gallium nitride, and directly reflect the chemical make-up of the precursor.

Contributed by Richard L. Wells from ult1.chem.duke.edu. on Saturday, June 20, 1998 12:43:09 PM

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