coffer-chemmat-9-2671

Data for reference coffer-chemmat-9-2671

Influence of Precursor Route on the Photoluminescence of Bulk Nanocrystalline Gallium Nitride

J. L. Coffer, M. A. Johnson, L. Zhang, R. L. Wells, J. F. Janik

Chemistry of Materials 9(12), 2671 (1997).

The impact of preparative method on the photoluminescence of bulk nanophase GaN materials has been evaluated. In general, the observed emission spectra are strongly dependent on the choice of precursor [viz., (1) the polymeric gallium imide{Ga(NH)3/2}n, (2) cyclotrigallazane, [H2GaNH2]3, and (3) a polymeric solid derived from cyclotrigallazane) and the pyrolysis temperature used in its conversion to GaN. Regardless of precursor, it appears that a brief HF etch of the nanophase GaN is a suitable chemical method in enhancing the blue band-edge PL of selected samples, presumably by eliminating surface defects.

Contributed by Richard L. Wells from priscilla.chem.duke.edu. on January 14, 1998 5:03:45 PM

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