1996

• ScAlMgO₄: an Oxide Substrate for GaN Epitaxy
  
• Growth and Doping of AlGaN Alloys by ECR-assisted MBE
• LUMINESCENCE SPECTRA OF SUPERBRIGHT BLUE AND GREEN InGaN/AlGaN/GaN LIGHT-EMITTING DIODES
• Growth Rate Reduction of GaN Due to Ga Surface Accumulation
• Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
• BANDGAP VARIATION AT THE ISOSTRUCTURAL PHASE TRANSFORMATION OF WURTZITE InN
• PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN
• Growth of Ga-face and N-face GaN films using ZnO Substrates
• Alternative N precursors and Mg doped GaN grown by MOVPE
• GaN m-i-n LED grown by MOVPE
• Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
• Free Excitons in GaN
• Recent Results in the Crystal Growth of GaN at High N₂ Pressure
• Epitaxial growth of cubic GaN and AlN on Si(001)
• Evidence for Shallow Acceptor Levels in MBE Grown GaN
• Raman Determination of the Phonon Deformation Potentials in α-GaN
• The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor
• Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE.
• MOCVD Equipment for Recent Developments towards the Blue and Green Solid State Laser
• Temperature distribution in the chamber used for crystal growth of GaN under high pressure of nitrogen
• ECR RIE-Enhanced Low Pressure Plasma Etching of GaN/InGaN/AlGaN Heterostructures
• GaN Based p‐n Structures Grown on SiC Substrates
• Study of GaN films grown by metalorganic chemical vapour deposition
• Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
• Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy
• Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method
• Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire
• In-depth Analysis of the Impurities in GaN
• Optical Properties of Nitride-based Structures Grown on 6H-SiC
• High Resistivity Al_xGa_1-xN Layers Grown by MOCVD
• RADIATIVE LIFETIME OF EXCITONS IN GaInN/GaN QUANTUM WELLS
• Fabrication of GaN mesa structures
• High-Power High-Temperature Heterobipolar TransistorWith Gallium Nitride Emitter
• Research on GaN MODFET's
• Determination of the dislocation densities in GaN on c-oriented sapphire
• Metal Contacts on α-GaN
• Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC
• Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire
• Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN
• GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
• The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
• Surface morphology of as grown and annealed bulk GaN crystals
• The Morphology and Cathodoluminescence of GaN Thin Films
• Yellow Band and Deep levels in Undoped MOVPE GaN.
• Growth, Doping and Characterization of Al_xGa_1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
• Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN

1997

• Gain Spectroscopy of HVPE-Grown GaN
• Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
• AVALANCHE BREAKDOWN LUMINESCENCE OF InGaN/AlGaN/GaN HETEROSTRUCTURES
• Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors
• Studies of Mg-GaN grown by MBE on GaAs(111)B substrates
• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
• Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure
• MOVPE growth optimization of high quality InGaN films.
• High Frequency AlGaN/GaN MODFET's
• Theoretical study of point defects in GaN and AlN; lattice relaxations and pressure effects
• A Perspective on the GaN Injection Laser
• Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts
• Evidence of 2D-3D transition during the first stages of GaN growth on AlN
• Optical nonlinearities of Gallium Nitride
• AlGaN-Based Bragg Reflectors
• XPS study of Au/GaN and Pt/GaN contacts
• Transient four wave mixing experiments on GaN
• Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN
• Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
• MOVPE Growth and Structural Characterization of Al_xGa_1-xN
• Yellow luminescence in Mg-doped GaN
• Properties of InGaN deposited on Glass at Low Temperature
• Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals
• Epitaxial Growth and Orientation of GaN on (1 0 0) γ-LiAlO2
• Comparison of Luminescence and Physical Morphologies of GaN Epilayers
• Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
• Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
• Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells
• Theoretical Studies Of Hydrogen Passivated Substitutional Magnesium Acceptor In Wurzite GaN
• Temperature behaviour of the yellow emission in GaN
• p-doping of GaN by MOVPE
• Electron Beam Pumped MQW InGaN/GaN Laser
• Physical Properties of Bulk GaN Crystals Grown by HVPE
• Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N₂ overpressure
• Raman study of Ga_1-xAl_xN solid solutions
• Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
• Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)_Si surface of 6H-SiC by MBE
• Raman characterization of the optical phonons in Al_xGa_1-xN layers grown by MBE and MOCVD
• GaN based LED's with different recombination zones
• The role of gaseous species in group-III nitride growth
• Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy
• Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
• The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
• Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence
• Surface Morphology and Structure of GaN_xAs_1-x
• High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors

1998

• GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• Direct SIMS Determination of the In_xGa_1-xN Mole Fraction
• The Polarity of GaN: a Critical Review
• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
• Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio
• The role of piezoelectric fields in GaN-based quantum wells
• Suppression of phase separation in InGaN due to elastic strain
• Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals
• Optical properties of electron-irradiated GaN
• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
• Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
• Polarization and band offsets of stacking faults in AlN and GaN
• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
• High quality GaN films - growth and properties
• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
• AMMONO method of BN, AlN and GaN synthesis and crystal growth.
• Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
• Heterostructure for UV LEDs Based on Thick AlGaN Layers
• Optical Properties of GaNAs Grown by MBE
• Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
• Thermodynamic properties of group-III nitrides and related species
• On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
• Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy
• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
• Luminescence and ESR Spectra of GaN:Si below and above Mott Transition
• Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
• Properties of GaN epilayers grown on misoriented sapphire substrates
• Schottky Diodes on MOCVD Grown AlGaN Films.
• GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors
• Pinholes, Dislocations and Strain Relaxation in InGaN
• Effect of internal absorption on cathodoluminescence from GaN
• Localized Epitaxy of GaN by HVPE on patterned Substrates
• 300°ree;C GaN/AlGaN Heterojunction Bipolar Transistor
• Macro- and microstrains in MOCVD-grown GaN
• Nucleation of AlN on the (7×7) Reconstructed Silicon (1 1 1) Surface
• The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
• Paramagnetic defects in GaN
• X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.
• GaN Single Crystal Habits and Their Relation to GaN Growth Under High Pressure of Nitrogen
• Native defects and carbon impurity in cubic BN
• Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique
• New plasma chemistries for etching GaN and InN: BI₃ and BBr₃
• Current status of GaN crystal growth by sublimation sandwich technique
• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
• Raman study of resonance effects in Ga_1-xAl_xN solid solutions
• Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents
• Phase Separation in wurtzite In_1-x-yGa_xAl_yN
• Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
• Fabrication and Characterization of GaN/AlGaN Ultraviolet-Band Heterojunction Photodiodes
• Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers

1999

• Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
• Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)
• Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1-xN measured by Infrared Ellipsometry
• Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.
• New buffer sublayers with crystal structure of cubic syngony for growing the heteroepitaxial films of nitride compounds of type A^IIIB^V on sapphire substrates
• Strain relaxation in GaN layers grown on porous GaN sublayers
• Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
• Radiative recombination in In_0.15Ga_0.85N/GaN multiple quantum well structures
• Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
• A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
• Novel approach to simulation of group-III nitrides growth by MOVPE
• Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
• The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
• Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
• Growth and Device Performance of GaN Schottky Rectifiers
• Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
• InGaN/GaN/AlGaN-Based LEDs and Laser Diodes
• InGaN/GaN/AlGaN-Based LEDs and Laser Diodes
• Material Properties of GaN in the Context of Electronic Devices
• Near Defect Free GaN Substrates
• Dry and Wet Etching for Group III-Nitrides
• Contact Issues for GaN Technology
• Pyroelectric and Piezoelectric Properties of GaN-Based Materials
• Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
• GaN Homoepitaxy for Device Applications
• Doping of AlGaN Alloys
• Etch Processing of III-V Nitrides
• Damage-Free Photoassisted Cryogenic Dry Etching and Photoelectrochemical Wet Etching of GaN
• Focused Ion Beam Micromachining of GaN Photonic Devices
• Luminescence From Erbium-Doped Gallium Nitride Thin Films
• RBS Lattice Site Location and Damage Recovery Studies on Er Implanted GaN
• Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium-Doped GaN
• Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy
• Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitxy
• Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by MBE
• Defect Luminescence in Heavily Mg-Doped GaN
• Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers
• Mechanisms of Optical Gain in Cubic GaN and InGaN
• Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown InGaN Epilayers and InGaN/GaN Quantum Wells
• Mechanism for Radiative Recombination in InGaN/GaN Multiple Quantum Wells
• Spectroscopic Studies in InGaN Quantum Wells
• Composition Dependence of the Band Gap Energy of In_xGa_1-xN Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition
• Optical Gain Spectra in GaN/InGaN Quantum Wells with the Compositional Fluctuations
• Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via MOVPE
• Influence of Active Nitrogen Species on the Nitridation Rate of Sapphire
• Structural Study of GaN(As,P) Layers Grown on (0001) GaN by Gas Source Molecular Beam Epitaxy
• GaN Growth by Remote Plasma MOCVD: Chemistry and Kinetics by Real Time Ellipsometry
• Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth
• Electrical and Photoelectrical Characterization of Deep Defects in Cubic GaN on GaAs
• Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells
• Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy
• Characterization of Be-Implanted GaN Annealed At High Temperatures
• Thermal Residual Stress Modeling in AlN and GaN Multilayer Samples
• Strong Piezoelectric Effects in Unstrained GaN Quantum Wells
• Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate
• Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
• Growth of Oriented Thick Films of Gallium Nitride From the Melt
• p- and n- Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
• Cubic InGaN Grown by MOCVD
• Optical Investigations of AlGaN on GaN Epitaxial Films
• Extended Defects in GaN: A Theoretical Study
• Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence
• Electron Beam Induced Impurity Electro-Migration in Unintentionally Doped GaN
• Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
• Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy
• Pendeo-Epitaxy - A New Approach for Lateral Growth of GaN Structures
• Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD
• Nitridation of GaAs(001) Surface Studied by Auger Electron Spectroscopy
• High Quality Hydrothermal ZnO Crystals
• Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
• Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor Deposition
• Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE
• Effects of Susceptor Geometry on GaN Growth on Si(111) with a New MOCVD Reactor
• Structure of MOVPE Deposited AlN on Si(111)
• Influence of Doping on the Lattice Dynamics GaN
• Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
• Properties of Epitaxial ZnO Thin Films for GaN and Related Applications
• Comparative Growth of AlN on Singular and Off-Axis 6H and 4h-SiC by MOCVD
• Gallium Nitride Growth Using Diethylgallium Chloride As An Alternative Gallium Source
• Piezoelectric Level Splitting in GaInN/GaN Quantum Wells
• Photoluminescence Excitation Spectroscopy of Carbon-Doped Gallium Nitride
• GaN CVD Reactions: Hydrogen and Ammonia Decomposition and the Desorption of Gallium
• Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum Wells
• Temperature Effect on the Quality of AlN Thin Films
• Enhanced GaN Decomposition At MOVPE Pressures
• Defect States in SiC/GaN -and SiC/GaN /AlGaN- Heterostructures Characterized by Admittance and Photocurrent Spectroscopy
• Microstructure of GaN Grown on (111) Si by MOCVD
• Ion Channeling Analysis of Gallium Nitride Implanted with Deuterium
• Optical Properties of Si-Doped Al_xGa_1-xN/Al_yGa_1-yN (x=0.24-0.53, y=0.11) Multi-Quantum-Well Structures
• Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates
• Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE
• Relaxation Phenomena in GaN/ AlN / 6H-SiC Heterostructures
• Growth and Characterization of B_xGa_1-xN on 6H-SiC (0001) by MOVPE
• Epitaxial Growth and Structural Characterization of Single Crystalline ZnGeN₂
• Optical and Structural Properties of Er³⁺-Doped GaN Grown by MBE
• Cubic GaN Heteroepitaxy on Thin-SiC Covered Si(001)
• Selective Area Growth and Epitaxial Lateral Overgrowth of GaN Using Tungsten Mask
• Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy
• Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates
• Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process
• TEM Study of Defects in Laterally Overgrown GaN Layers
• Chloride-Based Growth Chemistries for Epitaxial Lateral Overgrowth of GaN in Both Hydride and Metalorganic Vapor Phase Epitaxy
• GaN: From Selective Area Epitaxy To Epitaxial Lateral Overgrowth
• Process Routes for Low-Defect Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
• Computational Materials Science, An Increasingly Reliable Engineering Tool: Anomalous Nitride Band Structures and Device Consequences
• A Critical Comparison Between MBE and MOVPE Growth of III-V Nitride Heterostructures for Optoelectronic Device Applications
• Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN Alloys
• Novel Defect Complexes and Their Role in p-Type Doping of GaN
• Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaN
• Persistent Photoconductivity and Optical Quenching in GaN-AlGaN-Films: Spectral Dependence and Interface Effects
• Studies on Carbon As Alternative p-Type Dopant for GaN
• The Behavior of Ion-Implanted Hydrogen in Gallium Nitride
• Spectroscopy of Proton Implanted GaN
• Electronic Structure and Optical Properties of ZnGeN₂
• Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation
• DLTS Characterization of Defects Introduced During Sputter Deposition of Au Schottky Contacts on n-GaN
• Photoluminescence of FS-GaN Treated in Alcoholic Sulfide Solutions
• Effects of Oxygen Ion Implantation in Gallium Nitride
• Characteristic Temperature Estimation for GaN-Based Lasers
• Piezoelectric Field Effect on Optical Properties of GaN/GaInN/AlGaN Quantum Wells
• Control of the Polarity and Surface Mophology of GaN Film Deposited on C-Plane Sapphire
• Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well
• XPS Study of Oxygen Adsorption on (3x3) Reconstructed MBE Grown GaN Surfaces
• Thermal Stability of GaN Investigated by Raman Scattering
• Electroluminescence Properties of InGaN/AlGaN/GaN Light Emitting Diodes with Multiple Quantum Wells
• GaN Nanotubes
• Electrical Characterization of MOVPE-Grown p-Type GaN:Mg Against Annealing Temperature
• Rapid Thermal Processing of Implanted GaN Up To 1500°C
• Extrinsic Performance Limitations in AlGaN/GaN Heterostucture Field Effect Transistors
• Behavior of W and WSi_x Contact Metallization on n- and p-Type GaN
• Characterization of Hot-Electron Effects on Flicker Noise in III-V Nitride Based Heterojunctions
• Photoelectrochemical Etching of In_xGa_1-xN
• Simulation of a GaN Based Static Induction Transistor
• Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer MOVPE Reactor
• Crystal Structure and Defects in Nitrogen-Deficient GaN
• Influence of Si-Doping on Carrier Localization of MOCVD-Grown InGaN/GaN Multiple Quantum Wells
• Theory of the Gain Characteristics of InGaN/AlGaN QD Lasers
• Study of Thin Films Polarity of Group III Nitrides
• Temperature Dependence of Bound Exciton Emissions in GaN
• Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon
• NiIn As An Ohomic Contact To p-GaN
• Characterization of Flicker Noise in GaN Based Modfets At Low Drain Bias
• GaN p-n Structures Fabricated by Mg Ion Implantation
• Amplification Path Length Dependence Studies of Stimulated Emission From Optically Pumped InGaN/GaN Multiple Quantum Wells
• Inductively Coupled Plasma Etching of III-Nitrides in Cl₂/Xe, Cl₂/Ar and Cl₂/He
• Focused Ion Beam Etching of GaN
• Physics-Based Intrinsic Model for AlGaN/GaN HEMTs
• Ensemble Monte Carlo Study of Electron Transport in Bulk InN
• Monte Carlo Simulation of Hall Effect in n-Type GaN
• Phonon Dynamics and Lifetimes of AlN and GaN Crystallites
• Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs
• Theoretical Study of ZnO and Related Mg_xZn_1-xO Alloy Band Structures
• Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth
• Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDs
• Fabrication of Smooth GaN-Based Laser Facets
• Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated From 3-Inch Epitaxy
• Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics
• Generation Recombination Noise in GaN Photoconductors
• Group-III Nitride Etch Selectivity in Boron Trichloride/Chlorine ICP Plasmas
• Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)
• Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
• Piezoelectric Properties of GaN Self-Organized Quantum Dots
• Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-Surfactant
• Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy
• Ni/Si-Based Contacts To GaN: Thermally Activated Structural Transformations Leading To Ohmic Behavior

2000

• The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in In_xGa_1-xN quantum wells
• Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE
• A Review of Dry Etching of GaN and Related Materials
• Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers
• Current limitation after pinch-off in AlGaN/GaN FETs
• Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
• Improvements in Bis(cyclopentadienyl)magnesium Purity as Determined with Gas Chromatography-Mass Spectroscopy
• Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides
• UV-Specific (320-365 nm) Digital Camera Based On a 128x128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
• Preparation of Sapphire for High Quality III-Nitride Growth
• Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.
• Solar-Blind AlGaN Heterostructure Photodiodes
• High-Quality Al_xGa_1-xN Using Low Temperature-Interlayer and its Application to UV Detector
• Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers
• Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire
• Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes
• Spatially Resolved Electroluminescence of InGaN-MQW-LEDs
• High Reflectance III-Nitride Bragg Reflectors Grown by Molecular Beam Epitaxy
• High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays
• Characteristics of Ti/Pt/Au Ohmic Contacts on p-Type GaN/A1xGA1-xN Superlattices
• High-Quality Non-Alloyed Pt Ohmic Contacts to p-Type GaN Using Two-step Surface Treatment
• Electrical Measurements in GaN: Point Defects and Dislocations
• Properties and Effects of Hydrogen in GaN
• Lattice Location of Deuterium in Plasma and Gas Charged Mg Doped GaN
• Surface Conversion Effects in Plasma-Damaged p-GaN
• Zirconium Mediated Hydrogen Outdiffusion from p-GaN
• A Comparative Study of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN/Sapphire Substrates
• Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas
• Correlation Between Sheet Carrier Density-Mobility Product and Persistent Photoconductivity In AlGaN/GaN Modulation Doped Heterostructures
• Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETs
• New Materials-Theory-Based Model for Output Characteristics of AlGaN/GaN Heterostructure Field Effect Transistors
• Temperature Distribution in InGaN-MQW LEDs Under Operation
• Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam Epitaxy
• Electron Beam Pumping in Nitride Vertical Cavities With GaN/A10.25Ga0.75 Bragg Reflectors
• Microstructure-based Lasing in GaN/AlGaN Separate Confinement Heterostructures
• Dependence of Aging on Inhomogeneities in InGaN/AlGaN/GaN Light-Emitting Diodes
• Pulsed-Laser-Deposited AlN Films for High-Temperature SiC MIS Devices
• The Formation of In-Rich Regions at the Periphery of the Inverted Hexagonal Pits of InGaN Thin-Films Grown by Metalorganic Vapor Phase Epitaxy
• Emission Enhancement of GaN/AlGaN Single-Quantum-Wells Due to Screening of Piezoelectric Field
• Correlation Between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy
• Optical Properties of AlGaN Quantum Well Structures
• Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High In Content
• Phonons and Free Carriers in a Strained Hexagonal GaN-AlN Superlattice Measured by Infrared Ellipsometry and Raman Spectroscopy
• Optical Spectroscopy of InGaN Epilayers in the Low Indium Composition Regime
• Photoluminescence Characterization of Mg Implanted GaN
• An Investigation of Long and Short Time-Constant Persistent Photoconductivity in Undoped GaN Grown by RF-Plasma Assisted Molecular Beam Epitaxy
• The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High-Temperature Annealing of Ion-Implanted GaN Films
• Prism Coupling as a Non-Destructive Tool for Optical Characterization of (Al,Ga) Nitride Compounds
• Fabrication and Characterization of Metal-Ferroelectric-GaN Structures
• Deep Level Related Yellow Luminescence in p-type GaN Grown by MBE on (0001) Sapphire
• A Study of Annealed GaN Grown by Molecular Beam Epitaxy Using Photoluminescence Spectroscopy
• Nonlinear Optical Characterization of GaN Layers Grown by MOCVD on Sapphire
• Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model
• Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial Overgrowth
• The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN Grown on MOCVD GaN/sapphire Templates
• Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films
• Time-Resolved Spectroscopy of InGaN
• Photoluminescence Enhancement and Morphological Properties of Carbon Co-Doped GaN:Er
• Photoluminescence and Cathodoluminescence of GaN Doped With Pr
• Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)
• High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
• Processing And Device Performance Of GaN Power Rectifiers
• Comparison of Implant Isolation Species for GaN Field-Effect Transistor Structure
• Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining
• Wet Etching of Ion-Implanted GaN Crystals by AZ-400K Photoresist
• Oxidation of Gallium Nitride Epilayers in Dry Oxygen
• A Damage-Reduced Process Revealed by Photoluminescence in Photoelectrochemical Etching GaN
• Fabrication and Characterization of InGaN Nano-Scale Dots for Blue and Green LED Applications
• The Microstructure and Electrical Properties of Directly Deposited TiN Ohmic Contacts to Gallium Nitride
• Highly Chemical Reactive Ion Etching of Gallium Nitride
• Improved Low Resistance Contacts of Ni/Au and Pd/Au to p-Type GaN Using a Cryogenic Treatment
• A Thermodynamic Approach to Ohmic Contact Formation to p-GaN
• Metal/GaN Contacts Studied by Electron Spectroscopies
• Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN Heterostructures
• Deep Levels in n-Type Schottky and p+-n Homojunction GaN Diodes
• Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films
• Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy
• Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy
• Low-Frequency Noise in SiO2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates
• Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and Their Optical Characterization by Micro-Photoluminescence/Raman Mapping
• Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures
• Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum Wells
• Comparison Study of Structural and Optical Properties of In_xGa_1-xN/GaN Quantum Wells With Different In Compositions
• Emission at 247 nm from GaN Quantum Wells Grown by MOCVD
• Identification of As, Ge and Se Photoluminescence in GaN Using Radioactive Isotopes
• Pendeo-Epitaxial Growth and Characterization of GaN and Related Materials on 6H-SiC(0001) and Si(111) Substrates
• Dislocation Arrangement in a Thick LEO GaN Film on Sapphire
• Fabrication of GaN With Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
• Advanced PENDEOEPITAXY™ of GaN and Al_xGa_1-xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition
• A TEM Study of GaN Grown by ELO on (0001) 6H-SiC
• Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy
• Mass Transport, Faceting and Behavior of Dislocations in GaN
• Integration of PLZT and BST Family Oxides with GaN
• HVPE and MOVPE GaN Growth on Slightly Misoriented Sapphire Substrates
• Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown 'Templates'
• The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GaN
• Visible and Infrared Emission of GaN:Er Thin Films Grown by Sputtering
• Growth Kinetics of GaN Thin Films Grown by OMVPE Using Single Source Precursors
• Optical Properties of Manganese Doped Amorphous and Crystalline Aluminum Nitride Films
• A Study of the Effect of V/III Flux Ratio and Substrate Temperature on the In Incorporation Efficiency in InxGa1-x/GaN Heterostructures Grown by RF Plasma-Assisted Molecular Beam Epitaxy
• Surface Morphology of GaN: Flat Versus Vicinal Surfaces
• Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction
• Growth of InN by MBE
• Evidence from EELS of Oxygen in the Nucleation Layer of an MBE Grown III-N HEMT
• Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma Sources
• MBE Growth Of GaN Films In Presence Of Surfactants: The Effect Of Mg And Si
• The Effect of Al in Plasma-Assisted MBE-Grown GaN
• Electrical Properties of Cubic InN and GaN Epitaxial Layers as Function of Temperature
• Role of Arsenic Hexagonal Growth-Suppression on a Cubic GaNAs Growth Using Metalorganic Chemical Vapor Deposition
• Metal Organic Vapor Phase Epitaxy of GaAsN/GaAs Quantum Wells Using Tertiarybutylhydrazine
• TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE
• Microstructure and Physical Properties of GaN Films on Sapphire Substrates
• Structural Evolution of GaN During Initial Stage MOCVD Growth
• Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPE
• Formation and Stability of the Prismatic Stacking Fault in Wurtzite (Al,Ga,In) Nitrides
• GaN Decomposition in Ammonia
• Surface Activity of Magnesium During GaN Molecular Beam Epitaxial Growth
• Simulations of Defect-Interface Interactions in GaN
• Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin Al_xGa_1-xN Layers Grown by MOCVD
• Structural Properties of Laterally Overgrown GaN
• Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy
• Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si
• Activation of Beryllium-Implanted GaN by Two-Step Annealing
• Co-Doping Characteristics of Si and Zn with Mg in p-Type GaN
• Efficient Acceptor Activation in Al_xGa_1-xN/GaN Doped Superlattices
• Doping Dependence of the Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001) Using a Scanning Thermal Microscope
• High Temperature Hardness of Bulk Single Crystal GaN
• AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties
• Negative Differential Conductivity in AlGaN/GaN HEMTs: Real Space Charge Transfer from 2D to 3D GaN States?
• Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors
• High-Temperature Reliability of GaN Electronic Devices
• Fabrication and Characterization of GaN Junction Field Effect Transistors
• Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron Beam
• TEM Study of Bulk AlN Growth by Physical Vapor Transport
• Thermal Expansion of GaN at Low Temperatures - A Comparison of Bulk and Homo- and Heteroepitaxial Layers
• The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
• MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics
• Homoepitaxial Growth on Misoriented GaN Substrates by MOCVD
• AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy
• GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique
• Preparation and Characterization of Single-Crystal Aluminum Nitride Substrates
• Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes
• High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy Using a Thin Low-Temperature AlN Layer
• High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
• MBE Growth of Nitride-Arsenide Materials for Long Wavelength Optoelectronics
• Structural and Electronic Properties of Line Defects in GaN
• Simulation of H Behavior in p-GaN(Mg) at Elevated Temperatures
• Mg Segregation, Difficulties of P-Doping in GaN
• Optical Activation Behavior of Ion Implanted Acceptor Species in GaN

2001

• Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN
• Electrical Profiles in GaN/Al₂O₃ Layers with Conductive Interface Regions
• Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory
• On the origin of the 2.8 eV blue emission in p-type GaN:Mg : A time-resolved photoluminescence investigation
• Visible Luminescent Activation of Amorphous AlN:Eu Thin-Film Phosphors with Oxygen
• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
• Electronic Properties of Ga(In)NAs Alloys
• High Temperature Elastic Constant Prediction of Some Group III-Nitrides
• High-temperature structural behavior of Ni/Au Contact on GaN(0001)
• New Technique for Sublimation Growth of AlN Single Crystals
• Influence of Poisson’s ratio uncertainty on calculations of the bowing parameter for strained InGaN layers
• Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates
• Room Temperature Ohmic contact on n-type GaN using plasma treatment
• Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy

2002

• Modeling GaN Growth by Plasma Assisted MBE in the Presence of Low Mg Flux

Acta Chemica Scandinavica

1971

• Gas phase electron diffraction investigation of the molecular structures of trimethylaluminum monomer and dimer

1972

• On the molecular structure of the complex trimethylaluminium-trimethylamine

1982

• The molecular structures of trimethylindium and trimethylthallium determined by gas electron diffraction

Acta metallurgica

1989

• On the stability of surfaces of stressed solids

Acta Crystallographica

1965

• The Crystal Structure and Anomalous Dispersion of γ-LiAlO₂

Abstracts of Papers of the American Chemical Society

1993

• Computational Studies of the Role of Polytypism in Nanocrystalline Gallium Nitride

American Ceramics Society Bulletin

1985

• Elastic properties of SiC, AlN, and their solid solutions and particulate composites

Advances in Physics

1971

• Long Wavelength Optical Phonons in Mixed Crystals

AIP Conference Proceedings

1994

• Crystal growth of III-N semiconductors under high nitrogen pressure
• Equation of state and pressure-induced phase transition of III-V nitrides
• New high pressure phases of the III-V compounds AlN, GaN, InN

American Mineralogist

1980

• Computing and drawing crystal shapes

Applied Optics

1998

• GaN-based solar-ultraviolet detection instrument

Applied Physics A

1995

• Silver Schottky contacts on Si(111):H-1x1 surfaces prepared bywet-chemical etching
• Current Spreading and Series Resistance of Proton-Implanted Vertical‐Cavity Top-Surface-Emitting Lasers

1997

• Luminescence conversion of blue light emitting diodes

Applied Crystallography

1995

• Absolute Lattice-Parameter Measurement

Acta Physica Polonica A

1995

• High Pressure Crystallization of Iii-v Nitrides
• Epitaxial Layers Versus Bulk Single Crystals of GaN: Temperature Studies of Lattice Parameters and Energy Gap
• Photoluminescence Study of GaN

1996

• Doping properties of amphoteric C, Si, and Ge impurities in GaN and AlN
• On GaN crystallization by ammonothermal method
• Shallow donors and acceptors in GaN; bound excitons and pair spectra

1997

• Two-electron transition in homoepitaxial GaN layers

Applied Physics Letters

1962

• Stimulated emission of radiation from GaAs p-n junctions

1964

• Flux Growth, Czochralski Growth, and Hydrothermal Synthesis of Lithium Metagallate Single Crystals

1968

• Vacuum deposition of AlN acoustic transducers

1969

• The preparation and properties of vapor-deposited single-crystal-line GaN

1970

• Optical absorption of GaN

1971

• Stimulated emission and laser action in gallium nitride

1972

• Electrical and optical properties of rf-sputtered GaN and InN

1973

• Violet luminescence of Mg-doped GaN
• Raman scattering in thin film waveguides
• Acoustic surface wave properties of epitaxially grown aluminum nitride and gallium nitride on sapphire

1974

• rf-sputtered aluminum nitride films on sapphire
• Photoluminescence of Zn-implanted GaN
• Photoemission from GaN
• Secondary electron emission from the GaN:Cs-O surface
• Optical investigations of Zn, Hg, and Li doped GaN

1975

• Epitaxial growth of aluminum nitride films on sapphire by reactive evaporation
• Monte Carlo calculation of the velocity-field relationship for gallium nitride

1976

• Ultraviolet electroluminescence in AlN

1977

• Efficient injection mechanism for electroluminescence in GaN
• Nonlinear optical susceptibilities of AlN film

1978

• Reactive sputtering of gallium nitride thin films for GaAs MIS structures
• The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor process

1982

• Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth
• Lateral Epitaxial Overgrowth of GaAs by Organometallic Chemical Vapor Deposition,
• A new silicon-on-insulator structure using molecular beam epitaxial growth on porous silicon

1983

• Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AIN-coated sapphire substrates
• Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor deposition
• Deactivation of the boron acceptor in silicon by hydrogen
• Properties and ion implantation of Al(x)Ga(1-x)N epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition
• Quantitative ion beam process for the deposition of compound thin films
• 1.0 GHz thin-film acoustic wave resonator on GaAs

1985

• Effect of Substrate Temperature on the Doping Profiles of Si in Selectively doped AlGaAs/GaAs/AlGaAs Double Heterojuction Structures

1986

• Growth of GaN films using trimethylgallium and hydrazine
• Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
• Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
• Growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxy
• Optical Gain in GaInN/GaN Heterostructures

1987

• Molecular beam epitaxial growth of CoSi₂ on porous Si

1988

• Disk hydrogen plasma assisted chemical vapor deposition of aluminum nitride
• Reflection mass spectrometry of As incorporation during GaAs molecular beam epitaxy
• Parameters for in situ growth of high Tc superconducting thin films using an oxygen plasma source

1989

• Heteroepitaxial growth of InN by microwave-excited metalorganic chemical vapor phase epitaxy
• Al_xGa_1-xN polarity determination by x-ray diffraction

1990

• Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wells
• Nitrogen pair luminescence in GaAs
• Direct demonstration of a misfit strain-generated electric field in a [1 1 1] growth axis zinc-blende heterostructure
• Effects of Peierls barrier and epithreading dislocation orientation on the critical thickness in heteroepitaxial structures
• Ultraviolet reflectance of AlN, diamond-like carbon, and SiC thin films
• Gallium desorption from GaAs and (Al,Ga)As during molecular beam epitaxy growth at high temperatures

1991

• Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low- pressure metalorganic chemical vapor deposition
• Novel metalorganic chemical vapor deposition system for GaN growth
• Electrical properties of GaAs/GaN/GaAs semiconductor- insulator-semiconductor structures
• High electron mobility GaN/Al_xGa_1-xN heterostructures grown by low-pressure metalorganic chemical vapor deposition
• Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition
• Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy
• Reflective filters based on single-crystal GaN/Al_xGa_1-xN multilayers deposited using low-pressure metalorganic chemical vapor deposition
• breakdown characteristics of SiC diodes
• Overgrowth of indium nitride thin films on aluminum nitride nucleated (00.1) sapphire by reactive magnetron sputtering
• Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy
• Hot filament enhanced chemical vapor deposition of AlN thin films
• Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

1992

• Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition
• High quality GaAs on Si by conformal growth
• Synthesis of metastable epitaxial zincblende-structure AlN by solid-state-reaction
• Growth of GaN(0001)1 (times) 1 on Al₂O₃(0001) by gas-source molecular beam epitaxy
• High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers
• Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-Al_xGa_1-xN heterojunctions
• Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

1993

• Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin films
• Growth of GaAsN alloys by low-pressure metalorganic chemical vapor deposition using plasma-cracked NH₃
• Metal semiconductor field effect transistor based on single crystal GaN
• High-power InGaN/GaN double-heterostructure violet light emitting diodes
• Metal contacts to gallium nitride
• A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma-assisted molecular-beam epitaxy
• Ultraviolet and violet light-emitting GaN diodes grown by low-pressure metalorganic chemical vapor deposition
• Ultraviolet and violet light-emitting GaN diodes grown by low-pressure metaorganic chemical vapor deposition
• GaN grown on hydrogen plasma cleaned 6H-SiC substrates
• Electron transport mechanism in gallium nitride
• Reversible changes in doping of InGaAlN alloys induced by ion implantation or hydrogenation
• high breakdown SiC diodes
• High electron mobility transistor based on a GaN-Al_xGa_1-xN heterojunction
• Band gap bowing in GaP_1-xN_x alloys
• Strain and charge distribution in GaN-AlN-GaN semiconductor-insulator-semiconductor structure for arbitrary growth orientation
• Schottky barrier photodetector based on Mg-doped p-type GaN films
• Formation of gallium nitride by a novel hot mechanical alloying process
• Observation of optically detected magnetic resonance in GaN films
• Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy
• Reactive ion etching of gallium nitride in silicon tetrachloride plasmas
• Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces
• GaN/AlN digital alloy short-period superlattices by switched atomic layer metalorganic chemical vapor deposition
• Metalorganic vapor phase epitaxy of GaP_1-xN_x alloys on GaP
• Thermal stability of GaN investigated by low-temperature photoluminescence spectroscopy
• Tailoring of Internal Fields in Ingaas/Gaas Multiwell Structures Grown On (111)B Gaas
• p-type zinc-blende GaN on GaAs substrates
• Comparison of the physical properties of GaN thin films deposited on (0001) and (0112) sapphire substrates
• Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxy

1994

• Low resistance ohmic contacts on wide band-gap GaN
• Observation of stimulated emission in the near ultraviolet from a molecular beam epitaxy grown GaN film on sapphire in a vertical-cavity, single pass configuration
• Epitaxial Solid-Solution Films of Immiscible MgO and CaO
• Room-temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructure
• Optical gain of optically pumped Al_0.1Ga_0.9N/GaN double heterostructure at room temperature
• Candela-class high-brightness InGaN/AlGaN double- heterostructure blue-light-emitting diodes
• Self organized growth of regular nanometer-scale InAs dots on GaAs
• Temperature-dependent electron mobility in GaN: Effects of space charge and interface roughness scattering
• Hydrogenation of p-type gallium nitride
• Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN
• Nonalloyed ohmic contacts on GaN using InN/GaN short- period superlattices
• Hydrogenation of GaN, AlN, and InN
• Heteroepitaxial Growth of InN on AlN Nucleated (00.1) Sapphire by Ultrahigh Vacuum Electron Cyclotron Resonance Assisted Reactive Magnetron Sputtering
• Photoluminescence of zinc-blende GaN under hydrostatic pressure
• Optical properties near the band gap on hexagonal and cubic GaN
• Molecular-beam-epitaxy growth of GaN on GaAs(100) by using reactive nitrogen source
• Intensity dependence of photoluminescence in GaN thin films
• Simulations for the high-speed response of GaN metal- semiconductor-metal photodetectors
• Dry patterning of InGaN and InAlN
• p-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg
• Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers
• Reactive ion etching of GaN using BCl₃
• GaN epitaxial layers grown on 6H-SiC by the sublimation sandwich technique
• Microwave performance of a 0.25 mu m gate AlGaN/GaN heterostructure field effect transistor
• High-quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition
• High quality self-nucleated Al_xGa_1-x N layers on (00.1) sapphire by low-pressure metalorganic chemical vapor deposition
• Determination of the GaN/AlN band offset via the (-/0) acceptor level of iron
• Conduction-Band Engineering in Piezoelectric[111] Multiple- Quantum-Well P-I-N Photodiodes
• Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers
• Low-temperature epitaxial growth and photoluminescence characterization of GaN
• Low pressure metalorganic chemical-vapor deposition of cubic GaN over (100) GaAs substrates
• Comparison of Optical Nonlinearities in Piezoelectric Strained [111]-Grown and [001]-Grown (in,Ga)As (Al,Ga)As Quantum-Wells,
• Deep level defects in n-type GaN
• Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature
• p-type conduction in Mg-doped GaN and Al_0.08Ga_0.92N grown by metalorganic vapor phase epitaxy
• Microstructure and photoluminescence of GaN grown on Si(111) by plasma-assisted molecular beam epitaxy
• Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy
• High quality Al_xGa_1-xN grown by metalorganic chemical vapor deposition using trimethylamine alane as the aluminum precursor
• Characteristics of chemically assisted ion beam etching of gallium nitride
• Growth by molecular beam epitaxy and electrical characterization of Si-doped zinc blende GaN films deposited on beta -SiC coated (001) Si substrates
• 1.54-mu m photoluminescence from Er-implanted GaN and AlN

1995

• Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphire
• Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300C
• p-type conduction in Mg-doped Ga_0.91In_0.09N grown by metalorganic vapor-phase epitaxy
• Calculated second-harmonic susceptibilities of BN, AlN, and GaN
• High dislocation densities in high efficiency GaN-based light-emitting diodes
• Microstructural characterization of alpha -GaN films grown on sapphire by organometallic vapor phase epitaxy
• Photoemission capacitance transient spectroscopy of n- type GaN
• Silicon doping of GaN using disilane
• Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy
• Use of InN for Ohmic contacts on GaAs/AlGaAs heterojunction bipolar transistors
• Electrical and structural properties of In_xGa_1-xN on GaAs
• High temperature electron cyclotron resonance etching of GaN, InN, and AlN
• CCl₄ doping of GaN grown by metalorganic molecular beam epitaxy
• Schottky-based band lineups for refractory semiconductors
• Electron Hall mobility of n-GaN
• Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p-type layers
• Epitaxial Growth of Cubic AlN Films on (100)silicon and (111)silicon by Pulsed Laser Ablation
• Thermal stability of implanted dopants in GaN
• Optical properties of GaN epitaxial films grown by low- pressure chemical vapor epitaxy using a new nitrogen source: Hydrazoic acid (HN₃)
• Blue-violet light emitting gallium nitride p-n junctions grown by electron cyclotron resonance-assisted molecular beam epitaxy
• Study of defect states in GaN films by photoconductivity measurement
• Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface
• High quality AlN and GaN epilayers grown on (00.1) sapphire, (100), and (111) silicon substrates
• Nitrogen and fluorine ion implantation in In_xGa_1-xN
• Bowing parameters for zinc-blende Al_1-xGa_xN and Ga_1-xIn_xN
• High etch rates of GaN with magnetron reactive ion etching in BCl₃ plasmas
• Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy
• Pressure-dependent photoluminescence study of wurtzite GaN
• Photoconductive ultraviolet sensor using Mg-doped GaN on Si(111)
• Initial stage of aluminium nitride film growth on 6H-silicon carbide by plasma-assisted, gas source molecular beam epitaxy
• Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates
• Temperature dependence of interband transitions in GaN grown by metalorganic chemical vapor deposition
• Photoluminescence of residual transition metal impurities in GaN
• AlGaN pn junctions
• Study of chemically assisted ion beam etching of GaN using HCl gas
• On p-type doping in GaN - acceptor binding energies
• Two-dimensional electron gas in GaN-AlGaN heterostructures deposited using trimethylamine-alane as the aluminum source in low pressure metalorganic chemical vapor deposition
• Ion implantation doping and isolation of GaN
• Photoluminescence decay dynamics in an InGaN/AlGaN/GaN double-heterostructure blue-light-emitting diode
• Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire
• a 4. 5 kV 6H SiC rectifier
• Neutral-donor-bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition
• GaN grown by molecular beam epitaxy at high growth rates using ammonia as the nitrogen source
• Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy
• Growth of Al_xGa_1-xN:Ge on sapphire and silicon substrates
• Electron-phonon interactions in the wide band-gap semiconductor GaN
• Reactive ion etching of GaN using CHF₃/Ar and C₂ClF₅/Ar plasmas
• Characterization of structural defects in wurtzite GaN grown on 6H SiC using plasma-enhanced molecular beam epitaxy
• High quality InGaN films by atomic layer epitaxy
• High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes
• Photovoltaic effects in GaN structures with p-n junctions
• Formation of threading defects in GaN wurtzite films grown on nonisomorphic substrates
• Mechanism of yellow luminescence in GaN
• Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high-resolution transmission electron microscopy
• Dry etch damage in InN, InGaN, and InAlN
• Paramagnetic resonance in GaN-based light emitting diodes
• Time-resolved exciton luminescence in GaN grown by metalorganic chemical vapor deposition
• Investigation of longitudinal-optical phonon-plasmon coupled modes in highly conducting bulk GaN
• Valence subband structures of wurtzite GaN/AlGaN quantum wells
• High-quality GaN epitaxial layer grown by metalorganic vapor phase epitaxy on (111) MgAl[sub 2]O₄ substrate
• Growth of AlN by metalorganic molecular beam epitaxy
• Study of Schottky barriers on n-type GaN grown by low- pressure metalorganic chemical vapor deposition
• Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition
• Surface-mode stimulated emission from optically pumped GaInN at room temperature
• Synthesis of GaN by N ion implantation in GaAs (001)
• Direct observation of transferred-electron effect in GaN
• Zeeman spectroscopy of the Fe³⁺ center in GaN
• Theory of optical gain in ideal GaN heterostructure lasers
• Acceptor-bound exciton recombination dynamics in p-type GaN
• Properties of a Si doped GaN/AlGaN single quantum well
• Excitonic recombination in GaN grown by molecular beam epitaxy
• Temperature-mediated phase selection during growth of GaN on (111)A and (111)B GaAs substrates
• Real and reciprocal space mapping of the mosaic dispersion in self-nucleated Al_xGa_1-xN thin films on (00.1) sapphire
• Kinetics of photoconductivity in n-type GaN photodetector
• Photoluminescence from wurtzite GaN under hydrostatic pressure
• GaN thin films deposited via organometallic vapor phase epitaxy on alpha (6H)-SiC(0001) using high-temperature monocrystalline AlN buffer layers
• Microstructure of GaN epitaxy on SiC using AlN buffer layers
• Spontaneous and stimulated emission from photopumped GaN grown on SiC
• Thermal and plasma-assisted nitridation of GaAs(100) using NH₃
• Growth of GaN films by hot wall epitaxy
• Sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs
• Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopy
• Theoretical prediction of GaN lasing and temperature sensitivity
• Theory of laser gain in group-III nitrides
• Exciton Lifetimes in GaN and InGaN
• Exciton lifetimes in GaN and GaInN
• Growth of device quality GaN at 550 (degrees) C by atomic layer epitaxy
• In-Well Screening Nonlinearities in Piezoelectric Multiple- Quantum Wells

1996

• Electron Cyclotron resonance etch characteristics of GaN in SiCl4/Ar
• Determination of the effective mass of GaN from infrared reflectivity and Hall effect
• Deposition of high quality wurtzite GaN films over cubic (111) MgAl₂O₄ substrates using low pressure metalorganic chemical vapor deposition
• Structural properties of GaN films grown on sapphire by molecular beam epitaxy
• High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN
• Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface
• Deep levels in the upper band-gap region of lightly Mg- doped GaN
• Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN
• Scanning tunneling microscopy and tunneling luminescence of the surface of GaN films grown by vapor phase epitaxy
• High-quality GaInN/GaN multiple quantum wells
• Near-Field Optical Data Storage
• Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures
• Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition
• Room-temperature photoenhanced wet etching of GaN
• Effective-mass Hamiltonian for strained wurtzite GaN and analytical solutions
• Very low resistance multilayer Ohmic contact to n- GaN
• Carbon-doped boron nitride cold cathodes
• Metastability and persistent photoconductivity in Mg- doped p-type GaN
• Role of hydrogen in doping of GaN
• Room-temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy
• Low interface trap density for remote plasma deposited SiO₂ on n-type GaN
• Mechanisms of band-edge emission in Mg-doped p-type GaN
• Ca and O ion implantation doping of GaN
• Morphology and photoluminescence improvements from high- temperature rapid thermal annealing of GaN
• New near-infrared defect luminescence in GaN doped with vanadium by ion implantation
• Hydrogen passivation of Ca acceptors in GaN
• InGaN multi-quantum-well structure laser diodes grown on MgAl₂O₄ substrates
• AlGaN ultraviolet photoconductors grown on sapphire
• Cleaved GaN facets by wafer fusion of GaN to InP
• Low Energy Electron Enhanced Etching of Semiconductors,
• Ion-implanted GaN junction field effect transistor
• Electric breakdown in GaN p-n junctions
• A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films
• Electrical characterization of Mg-doped GaN grown by metalorganic vapor phase epitaxy
• Resonant Raman scattering in hexagonal GaN
• Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs
• Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers
• Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy
• Strongly localized excitons in gallium nitride
• High quality InP on Si by conformal growth
• Growth defects in GaN films on 6H- SiC substrates
• Minority-carrier-enhanced reactivation of hydrogen- passivated Mg in GaN
• Residual strain in GaN epilayers grown on sapphire and (6H)SiC substrates
• Thermal annealing characteristics of Si and Mg-implanted GaN thin films
• Fundamental optical transitions in GaN
• 75 A GaN channel modulation doped field effect transistors
• Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light emitting diodes
• Measurement of AlN/GaN (0001) heterojunction band offsets by x-ray photoemission spectroscopy
• Theoretical study of room temperature optical gain in GaN strained quantum wells
• Nonequilibrium electron distributions and phonon dynamics in wurtzite GaN
• Hall measurements and contact resistance in doped GaN/AlGaN heterostructures
• Growth and characterization of bulk InGaN films and quantum wells
• Activation energies of Si donors in GaN
• Response to ``Comment on `Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature' '' [Appl. Phys. Lett. 68, 3197 (1996)]
• Comment on ``Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature'' [Appl. Phys. Lett. 65, 520 (1994)]
• Growth and properties of scandium epitaxial films on GaN
• Characteristics of InGaN multi-quantum-well-structure laser diodes
• Growth of GaN on sapphire (0001) using a supersonic jet of plasma-generated atomic nitrogen
• Novel symmetry in the growth of gallium nitride on magnesium aluminate substrates
• X-ray crystallographic study of GaN epitaxial films on Al₂O₃(0001) substrates with GaN buffer layers
• Deep level defects in Mg-doped, p-type GaN grown by metalorganic chemical vapor deposition
• Morphology of luminescent GaN films grown by molecular beam epitaxy
• Preparation of GaN films on sapphire by metalorganic chemical vapor deposition using dimethylhydrazine as nitrogen source
• Electron cyclotron resonance etching characteristics of GaN in SiCl₄/Ar
• Optical gain in GaInN/GaN heterostructures
• The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer
• High responsitivity intrinsic photoconductors based on Al_xGa_1-xN
• Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers
• Deep level defects in n-type GaN compensated with Mg.
• Thermally stimulated current trap in GaN
• Growth and characterization of AlInGaN quaternary alloys
• Dynamics of bound-exciton luminescences from epitaxial GaN
• Study of deep level defects in n-GaN by the optical transmission method
• Refractive indices of zincblende structure beta - GaN(001) in the subband-gap region (0.7-3.3 eV)
• Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors
• Penetration depth measurements of single-crystal NbN films at millimeter-wave region
• Spatial distribution of the luminescence in GaN thin films
• Picosecond four-wave-mixing in GaN epilayers at 532 nm
• Electrical properties of boron nitride thin films grown by neutralized nitrogen ion assisted vapor deposition
• Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films
• Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition
• Effect of rapid thermal annealing on the electrical and physical properties of metalorganic chemical vapor deposited TiN
• Photoassisted dry etching of GaN
• Piezoresistive effect in wurtzite n-type GaN
• Etching of InP at >1μm·min⁻¹ inCl₂/Ar plasma chemistries
• Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition
• Highly resistive CH-doped GaN grown by plasma-assisted metalorganic chemical vapor deposition
• Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN films
• Selective growth of gallium nitride layers with a rectangular cross-sectional shape and stimulated emission from the optical waveguides observed by photopumping
• An optically pumped GaN- AlGaN vertical cavity surface emitting laser
• Inductively coupled plasma etching of GaN
• Mechanisms of recombination in GaN photodetectors
• Influence of Surface Defects on the Characteristics of GaN Schottky Diodes
• Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field-effect transistors
• Intrinsic optical properties of GaN epilayers grown on SiC substrates: Effect of the built-in strain
• Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions
• Synthesis of ultrafine gallium nitride powder by the direct current arc plasma method
• Photocurrent decay in n-type GaN thin films
• Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer
• Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation-doped field-effect transistors
• ICl/Ar electron cyclotron resonance plasma etching of III-V nitrides
• Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
• Ridge-geometry InGaN MQW structure laser diodes
• Nature of Mg impurities in GaN
• Microstructure of Ti/Al and Ti/Al/Ni/Au contacts for n-GaN
• Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes,
• Time-dependent study of low energy electron beam irradiation of Mg-doped GaN grown by metalorganic chemical vapor
• Light scattering in high-dislocation-density GaN
• Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double- heterostructure blue light-emitting diodes
• Room temperature epitaxy of Pd films on GaN under conventional vacuum conditions
• Optical patterning of GaN films
• Transverse modes and lasing characteristics of selectively grown vertical cavity semiconductor lasers
• Reactivation of acceptors and trapping of hydrogen in GaN/InGaN double heterostructures
• Radiative recombination lifetime measurements of InGaN single quantum well
• Low temperature inorganic chemical vapor deposition of heteroepitaxial GaN.
• Realization of optically pumped second-order GaInN-distributed-feedback lasers
• Real-time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry
• Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers
• Time-resolved photoluminescence studies of GaN epilayers grown by gas source molecular beam epitaxy on an AlN buffer layer on (111) Si
• Electroluminescence from erbium and oxygen coimplanted GaN
• Transient photocurrent induced in gallium nitride by two-photon absorption
• Metalorganic chemical vapor deposition of monocrystalline GaN thin films on beta- LiGaO[sub 2] substrates
• SiC rapid thermal carbonization of the (111)Si semiconductor-on-insulator structure and subsequent metalorganic chemical vapor deposition of GaN
• Amphoteric properties of substitutional carbon impurity in GaN and AlN.
• Critical thickness of GaN thin films on sapphire (0001)
• Damage to epitaxial GaN layers by silicon implantation
• Growth and properties of In_xGa _1-xN/Al_yGa _1-yN multiquantum wells developed by molecular beam epitaxy
• Inversion domains in GaN grown on sapphire
• Surface reconstruction of zinc-blende GaN
• Cleaved cavity optically pumped InGaN(en-dash) GaN laser grown on spinel substrates
• Laser diodes in piezoelectric quantum-well structures
• Electronic and structural properties of GaN grown by hydride vapor phase epitaxy.
• Optical transitions in GaN/Al_xGa_1-xN multiple quantum wells grown by molecular beam epitaxy
• Polarity determination of GaN films by ion channeling and convergent beam electron diffraction
• Strain effects on valence band structure in wurtzite GaN quantum wells
• Monitoring surface stoichiometry with the (2x 2) reconstruction during growth of hexagonal-phase GaN by molecular beam epitaxy
• Lattice-matching SiC substrates with GaN.
• Deep-level defects and n-type-carrier concentration in nitrogen implanted GaN
• Electron beam induced current measurements of minority carrier diffusion length in gallium nitride
• High field flashover strength of intrinsic gallium nitride and aluminum nitride in vacuum.
• Direct imaging of impurity-induced Raman scattering in GaN
• Near ultraviolet luminescence of Be doped GaN grown by reactive molecular beam epitaxy using ammonia
• High p-type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant
• Solid phase immiscibility in GaInN
• Properties of GaN grown at high rates on sapphire and on 6H- SiC
• Valence band splittings and band offsets of AlN, GaN, and InN
• Optical characteristics of p-type GaN films grown by plasma-assisted molecular beam epitaxy
• Nonalloyed Ti/Al Ohmic contacts to n-type GaN using high-temperature premetallization anneal
• The effect of atomic hydrogen on the growth of gallium nitride by molecular beam epitaxy
• Time-resolved photoluminescence studies of InGaN epilayers
• Surface lifetimes of Ga and growth behavior on GaN(0001)surfaces during molecular beam epitaxy
• Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233 K,
• Coexistence of wurtzite GaN with zinc blende and rocksalt studied by x-ray power diffraction and high-resolution transmission electron microscopy
• Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers
• Gain spectra and stimulated emission in epitaxial (In,Al) GaN thin films
• Photoluminescence related to the two-dimensinal electron gas at a GaN/AlGaN heterointerface
• A near-field scanning optical microscopy study of the photoluminescence from GaN films
• High quality GaN-InGaN heterostructures grown on (111) silicon substrates
• InGaN-GaN based light-emitting diodes over (111) spinel substrates
• Local vibrational modes of the Mg-H acceptor complex in GaN
• High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors
• Hardness and fracture toughness of bulk single crystal gallium nitride
• Room Temperature CW Operation of InGaN MQW Structure Laser Diodes
• Self-assembling GaN quantum dots on Al_xGa_1-xN surfaces using a surfactant
• Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
• Recombination dynamics in InGaN quantum wells
• Gallium vacancies and the yellow luminescence in GaN
• Sputtered AlN encapsulant for high-temperature annealing of GaN
• High temperature adduct formation of trimethylgallium and ammonia
• Mg-doped p-type GaN grown by reactive molecular beam epitaxy
• Photoluminescence study of high quality InGaN/GaN single heterojunctions
• Lattice parameters of gallium nitride
• Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates
• Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques
• Exciton region reflectance of homoepitaxial GaN layers
• High transconductance heterostructure field-effect transistors based on AlGaN/GaN
• Optical degradation of InGaN/AlGaN light-emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition
• Optical transitions in cubic GaN investigated by spatially resolved cathodoluminescence
• AlGaN/InGaN/GaN blue light emitting diode degradation under pulsed current stress
• Gain analysis for surface emission by optical pumping of wurtzite GaN
• Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H(en-dash) SiC and sapphire substrates
• Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire
• Characteristics of light-emitting diodes based on GaN p-n junctions grown by plasma assisted molecular beam epitaxy

1997

• High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) structures
• Arsenic mediated reconstructions on cubic (001) GaN
• Ohmic contacts to n-GaN using PtIn2
• Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
• Elastic moduli of gallium nitride
• Thermally stable PtSi Schottky contact on n-GaN
• Domain boundaries in eptiaxial wurtzite GaN
• Comparison of degradation caused by dislocation motion in compound semiconductor light-emitting devices
• The near band edge photoluminescence of cubic GaN epilayers
• Photoluminescence microscopy of InGaN quantum wells
• Alternative microstructure of GaN nucleation layers grown by low pressure metal-organic vapor phase epitaxy on sapphire substrate
• Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser dides with lifetimes of 27 hours
• Mg-doped green light emitting diodes over cubic (111) MgAl2O3 substrates
• Bowing parameter of the band-gap energy of GaNxAs1-x
• Excitation of a higher order transverse mode in an optically pumped In0.15Ga0.85N/In0.05Ga0.95N multiquantum well laser structure
• Low pressure synthesis of bulk, polycrystalline gallium nitride
• Optical linewidths of InGaN light emitting diodes and epilayers
• Deep levels and persistent photoconductivity in GaN thin films
• Optical properties of tensile-strained wurtzite GaN epitaxial layers
• Schottky barrier detectors on GaN for visible-blind UV detection
• Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy
• Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy
• Study of open-core dislocations in Gan films on (0001) sapphire
• Temperaure dependence of energy gap in GaN thin film studied by thermomodulation
• Small valence-band offsets at GaN/InGaN heterojunctions
• Gain spectroscopy on InGaN/GaN quantum well diodes
• InN-based Ohmic contacts to InAlN
• White light from InGaN/conjugated polymer hybrid light-emitting diodes
• Thermally oxidized AlN thin films for device insulators
• Anisotropy of the nitrogen conduction states in the group III nitrdes studied by polarized x-ray absorption
• Metalorganic vapor-phase epitaxy of cubic Al(x)Ga(1-x)N alloy on a GaAs (100) substrate
• Electrical and structural analysis of high-dose Si implantation in GaN
• High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III-V nitrides
• Subband emissions from InGaN multi-quantum-well laser diodes under room-temperature continous wave operation
• Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures
• Luminescence from localized states in InGaN epilayers
• Thermodynamic considerations in epitaxial growth of GaAs(1-x)N(x) solid solutions
• Comparison of high field electron transport in GaN and GaAs
• Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine
• exciton-phonon interection in InGaN/GaN and GaN/AlGaN multiple quantum wells
• Excitonic luminescence and absorption in dilute undoped GaN_xAs_1-x alloy (x<0. 3%)
• Theoretical evidence for efficient p-type doping of GaN using Be
• Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells
• Synthesis of gallium nitride quantum dots through reactive laser ablation
• Dispersion properties of aluminum nitride as measured by an optical waveguide technique
• Optical Properties of Wurtzite Structure GaN on Sapphire around Fundamental Absorption Edge (0. 78 - 4. 77 eV) by Spectroscopic Ellipsometry and the Optical Transmission Method
• Growth of single phase GaAs_1-xN_x with high nitrogen concentration by MOMBE
• Ballistic electron emission microscopy study of transport in GaN thin films
• Degenerate Layer at GaN/sapphire interface: Influence on Hall-effect measurements
• Characterization of InGaN MQW structures for blue semiconductor laser diodes
• Urbach-Martienssen tails in a wurtzite GaN epilayer
• Influence of growth conditions on electrical characteristics of AlN on SiC
• Band gaps of GaPN and GaAsN alloys
• Carbon-hydrogen complexes in vapor phase epitaxial GaN
• Resonant Raman scattering in GaN/(AlGa)N single quantum wells
• Correlation of cathodoluninescence inhomogeneity with microstructural defects in eptaxial GaN grown by metalorganic chemical-vapor deposition
• Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition
• Effect of hydrogen on the indium incorporation in InGaN epitaxial films
• Ultra-low resistive ohmic contacts on n-GaN using Si-implantation
• Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy
• Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN
• Direct observation of the inital nucleation and epitaxial growth of metastable cubic GaN on (001) GaAs
• Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes
• Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN
• Epitaxial relationships between GaN and Al2O3 (0001) substrates
• Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
• Comment on ‘Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions’ [Appl. Phys. Lett. 69, 1276 (1996)]
• Response to ‘Comment on ‘Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions’’ [
• AlGaN (0<x<1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition
• Role of self-formed InGaN quantum dots for exiton localization in the purple laser diode emitting at 420 nm
• Surface emission of InGaN epilayers under strong optical excitation
• Optical gain for wurtzite GaN with anisotropic strain in C plane
• Epitaxy of Al films on GaN studied by reflection high-energy electron diffraction and atomic force microscopy
• Calculation of unstable mixing region in wurtzite In_1‐x‐yGa_xAl_yN
• Persistent photoconductivity in n-type GaN
• Persistent photoconductivity in n-type GaN
• Anisotropic epitaxial lateral growth in GaN selective area epitaxy
• Evolution of stress relaxation and yellow luminescence in GaN/sapphire by Si incorporation
• Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells
• The process and efficiency of ultraviolet generation from gallium nitride blue light emitting diodes
• Determination of the Al mole fraction and band gap bowing of epitaxial AlGaN films
• Mg in GaN: Incorporation of a volatile species at high temperatures during molecular beam epitaxy
• Optical property of a novel (111)-oriented quantum structure
• Temperature-Dependent Absorption Measurements of Excitons in GaN Epilayers
• Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy
• Raman analysis of the longitudinal disorder in Al_xGa_1-xN films
• High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) structures
• Defect structure in selectively grown GaN films with low threading dislocation density
• Structure of GaN films grown by hydride vapor phase epitaxy
• Observation of multiple Er3 + sites in Er-implanted GaN by site-selective photoluminescence
• Low Noise p-p-n GaN Ultraviolet Photodetectors
• Spatially resolved cathodoluminescence spectra of InGaN quantum wells
• Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
• Vertical strain and doping gradients in thick GaN layers
• GaN exciton photovoltaic spectra at room temperature
• Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
• Polarity of (00·1) GaN epilayers grown on a (00·1) sapphire
• Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
• Microstructure of GaN layers grown on (001) GaAs by plasma assisted molecular-beam epitaxy
• Nucleation and growth of chemical beam epitaxy gallium nitride thin films
• Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO
• Polarization field effects on the electron-hole recombination dynamics in In[sub02]Ga[sub0. 8]N/In[sub1-X]Ga[subX]N multiple quantum wells
• Comparison of trimethylgallium and triethylgallium for the growth of GaN
• Preconditioning of c-plane sapphire for GaN epitaxy by radio frequency plasma nitridation
• Lateral Electron Current Operation of Vertical Cavity Surface Emitting Lasers with Buried Tunnel Contact Hole Sources
• The influence of inversion domains on surface morphology in GaN grown by molecular beam epitaxy
• GaN growth on Si (111) substrate using oxidized AlAs as an intermediate layer
• Atomic-scale nature of the (3x3)-ordered GaAs(001):N surface prepared by plasma-assisted molecular-beam epitaxy
• High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
• Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors
• AlGaN nanoparticle/polymer composite:synthesis, optical and structral characterization
• Effects of buffer layer on formation of domain boundaries in epilayer during film growth of GaN by low-pressure metal-organic vapor phase
• The piezoresistive effect in GaN-AlN-GaN structures
• Time-resolved photoluminescence studies of InGaN/GaN single- quantum-wells at room temperature
• Optimized growth conditions for the epitaxial nucleation of β-GaN on GaAs(001) by molecular beam epitaxy
• "Blue" temperature induced shift and band-tail emission in InGaN-based light sources
• Room temperature intrinsic optical transition in GaN epilayers: the band-to-band versus excitonic transitions
• Study of surface-emitted stimulated emission in GaN
• Determination of the band-gap energy of AlInN grown by metal-organic chemical-vapor deposition
• Carrier capture in pseudomorphically strained wurtzite GaN quantum-well lasers
• Strain determination in heteroepitaxial GaN
• Optical properties of Si-doped GaN

1998

• X-ray characterization of GaN/AlGaN multiple quantum wells for ultraviolet laser diodes
• Nature of the 2.8 eV photoluminescence band in Mg doped GaN
• Lasing Mechanism of InGaN/GaN/AlGaN multiquantum well laser diode
• Origin of Conductivity and Low-Frequency Noise in Reverse-Biased GaN p-n Junctions
• Electrical characterization of GaN/SiC n-p heterojunction diodes
• Optical properties of low band gap GaAs_(1-x)N_x layers: Infleunce of post-growth treatments
• Luminescence of as-grown and thermally annealed GaAsN/GaAs
• The incorporation of arsenic in GaN by metalorganic chemical vapor deposition
• Metalorganic molecular beam epitaxy of GaAsN with dimethylhydrazine
• Electronic properties of arsenic-doped gallium nitride
• Calculated natural band offsets of all II-VI and III-V semiconductors: chemical trends and the role of cation d orbitals
• Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
• InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
• Determination of wurtzite GaN lattice polarity based on surface reconstruction
• Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition
• Sound velocity of Al_xGaN_1-xN thin films obtained by surface acoustic-wave measurements
• GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy
• Temperature dependence of impact ionization in AlGaN-GaN Heterostructure Field Effect Transistors
• temperature dependence of impact ionization in AlGaN-GaN HEMTs
• Ultraviolet and violet GaN light emitting diodes on silicon
• Near-field optical study of InGaN/GaN epitaxial layers and quantum wells
• Coupling of GaN- and AlN-like longitudinal optic phonons in Ga1-xAlxN solid solutions
• Large band gap bowing of In_xGa_1-xN alloys
• Electrical characteristics of magnesium-doped nitride junction diodes
• Optical characterization of lateral epitaxial overgrown GaN layers
• Low Frequency Noise in GaN/GaAlN Heterojunctions
• Luminescence spectra from InGaN multiquantum wells heavily doped with Si,
• The formation of GaN dots on Al _xGa_1-xN surfaces using Si in gas-source molecular beam epitaxy
• Efficiency of NH₃ as nitrogen source for GaN molecular beam epitaxy
• Defect-induced Raman scattering in resonance with yellow luminescence transitions in hexagonal GaN on a sapphire substrate
• Phase separation in InGaN grown by metalorganic chemical vapor deposition
• Ultraviolet and violet GaN light emitting diodes on silicon
• Electron-irradiation-induced deep level in n-type GaN
• Doping of AlGaN
• Visible-Blind GaN Schottky Barrier Detectors Grown on Si(111)
• The influence of the deformation on the two-dimensional electron gas density in the GaN-AlGaN heterostructures
• Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
• Excitation density dependence of photoluminescence in GaN:Mg
• Electron Transport in AlGaN-GaN Heterostructures Grown on 6H-SiC Substrates
• Pit formation in GaInN quantum wells
• Schottky barrier photodetectors based on AlGaN
• Ultraviolet GaN light-emitting diodes grown by molecular beam epitaxy using NH3
• Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy
• Near-field scanning optical spectroscopy of an InGaN quantum well
• Optical Characterization of GaN/SiC n-p heterojunction and p-SiC
• Efficient all-optical light modulation in a piezoelectric heterostructure at room temperature
• AlGaN/GaN High Electron Mobility Field Effect Transistors with Low 1/f Noise
• Back-illuminated