1996

• ScAlMgO₄: an Oxide Substrate for GaN Epitaxy
  
• Growth and Doping of AlGaN Alloys by ECR-assisted MBE
• LUMINESCENCE SPECTRA OF SUPERBRIGHT BLUE AND GREEN InGaN/AlGaN/GaN LIGHT-EMITTING DIODES
• Growth Rate Reduction of GaN Due to Ga Surface Accumulation
• Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
• BANDGAP VARIATION AT THE ISOSTRUCTURAL PHASE TRANSFORMATION OF WURTZITE InN
• PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN
• Growth of Ga-face and N-face GaN films using ZnO Substrates
• Alternative N precursors and Mg doped GaN grown by MOVPE
• GaN m-i-n LED grown by MOVPE
• Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
• Free Excitons in GaN
• Recent Results in the Crystal Growth of GaN at High N₂ Pressure
• Epitaxial growth of cubic GaN and AlN on Si(001)
• Evidence for Shallow Acceptor Levels in MBE Grown GaN
• Raman Determination of the Phonon Deformation Potentials in α-GaN
• The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor
• Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE.
• MOCVD Equipment for Recent Developments towards the Blue and Green Solid State Laser
• Temperature distribution in the chamber used for crystal growth of GaN under high pressure of nitrogen
• ECR RIE-Enhanced Low Pressure Plasma Etching of GaN/InGaN/AlGaN Heterostructures
• GaN Based p‐n Structures Grown on SiC Substrates
• Study of GaN films grown by metalorganic chemical vapour deposition
• Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
• Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy
• Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method
• Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire
• In-depth Analysis of the Impurities in GaN
• Optical Properties of Nitride-based Structures Grown on 6H-SiC
• High Resistivity Al_xGa_1-xN Layers Grown by MOCVD
• RADIATIVE LIFETIME OF EXCITONS IN GaInN/GaN QUANTUM WELLS
• Fabrication of GaN mesa structures
• High-Power High-Temperature Heterobipolar TransistorWith Gallium Nitride Emitter
• Research on GaN MODFET's
• Determination of the dislocation densities in GaN on c-oriented sapphire
• Metal Contacts on α-GaN
• Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC
• Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire
• Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN
• GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
• The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
• Surface morphology of as grown and annealed bulk GaN crystals
• The Morphology and Cathodoluminescence of GaN Thin Films
• Yellow Band and Deep levels in Undoped MOVPE GaN.
• Growth, Doping and Characterization of Al_xGa_1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
• Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN

1997

• Gain Spectroscopy of HVPE-Grown GaN
• Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
• AVALANCHE BREAKDOWN LUMINESCENCE OF InGaN/AlGaN/GaN HETEROSTRUCTURES
• Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors
• Studies of Mg-GaN grown by MBE on GaAs(111)B substrates
• GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
• Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure
• MOVPE growth optimization of high quality InGaN films.
• High Frequency AlGaN/GaN MODFET's
• Theoretical study of point defects in GaN and AlN; lattice relaxations and pressure effects
• A Perspective on the GaN Injection Laser
• Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts
• Evidence of 2D-3D transition during the first stages of GaN growth on AlN
• Optical nonlinearities of Gallium Nitride
• AlGaN-Based Bragg Reflectors
• XPS study of Au/GaN and Pt/GaN contacts
• Transient four wave mixing experiments on GaN
• Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN
• Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia
• MOVPE Growth and Structural Characterization of Al_xGa_1-xN
• Yellow luminescence in Mg-doped GaN
• Properties of InGaN deposited on Glass at Low Temperature
• Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals
• Epitaxial Growth and Orientation of GaN on (1 0 0) γ-LiAlO2
• Comparison of Luminescence and Physical Morphologies of GaN Epilayers
• Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
• Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
• Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells
• Theoretical Studies Of Hydrogen Passivated Substitutional Magnesium Acceptor In Wurzite GaN
• Temperature behaviour of the yellow emission in GaN
• p-doping of GaN by MOVPE
• Electron Beam Pumped MQW InGaN/GaN Laser
• Physical Properties of Bulk GaN Crystals Grown by HVPE
• Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N₂ overpressure
• Raman study of Ga_1-xAl_xN solid solutions
• Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
• Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)_Si surface of 6H-SiC by MBE
• Raman characterization of the optical phonons in Al_xGa_1-xN layers grown by MBE and MOCVD
• GaN based LED's with different recombination zones
• The role of gaseous species in group-III nitride growth
• Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy
• Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
• The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
• Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence
• Surface Morphology and Structure of GaN_xAs_1-x
• High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors

1998

• GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• Direct SIMS Determination of the In_xGa_1-xN Mole Fraction
• The Polarity of GaN: a Critical Review
• Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
• Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio
• The role of piezoelectric fields in GaN-based quantum wells
• Suppression of phase separation in InGaN due to elastic strain
• Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals
• Optical properties of electron-irradiated GaN
• Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
• Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
• Polarization and band offsets of stacking faults in AlN and GaN
• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
• High quality GaN films - growth and properties
• Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
• AMMONO method of BN, AlN and GaN synthesis and crystal growth.
• Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN
• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
• Heterostructure for UV LEDs Based on Thick AlGaN Layers
• Optical Properties of GaNAs Grown by MBE
• Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
• Thermodynamic properties of group-III nitrides and related species
• On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
• Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy
• Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
• Luminescence and ESR Spectra of GaN:Si below and above Mott Transition
• Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
• Properties of GaN epilayers grown on misoriented sapphire substrates
• Schottky Diodes on MOCVD Grown AlGaN Films.
• GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors
• Pinholes, Dislocations and Strain Relaxation in InGaN
• Effect of internal absorption on cathodoluminescence from GaN
• Localized Epitaxy of GaN by HVPE on patterned Substrates
• 300°ree;C GaN/AlGaN Heterojunction Bipolar Transistor
• Macro- and microstrains in MOCVD-grown GaN
• Nucleation of AlN on the (7×7) Reconstructed Silicon (1 1 1) Surface
• The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
• Paramagnetic defects in GaN
• X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.
• GaN Single Crystal Habits and Their Relation to GaN Growth Under High Pressure of Nitrogen
• Native defects and carbon impurity in cubic BN
• Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique
• New plasma chemistries for etching GaN and InN: BI₃ and BBr₃
• Current status of GaN crystal growth by sublimation sandwich technique
• Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
• Raman study of resonance effects in Ga_1-xAl_xN solid solutions
• Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents
• Phase Separation in wurtzite In_1-x-yGa_xAl_yN
• Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
• Fabrication and Characterization of GaN/AlGaN Ultraviolet-Band Heterojunction Photodiodes
• Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
• Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers

1999

• Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
• Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)
• Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1-xN measured by Infrared Ellipsometry
• Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.
• New buffer sublayers with crystal structure of cubic syngony for growing the heteroepitaxial films of nitride compounds of type A^IIIB^V on sapphire substrates
• Strain relaxation in GaN layers grown on porous GaN sublayers
• Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
• Radiative recombination in In_0.15Ga_0.85N/GaN multiple quantum well structures
• Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
• A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
• Novel approach to simulation of group-III nitrides growth by MOVPE
• Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
• The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
• Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
• Growth and Device Performance of GaN Schottky Rectifiers
• Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
• InGaN/GaN/AlGaN-Based LEDs and Laser Diodes
• InGaN/GaN/AlGaN-Based LEDs and Laser Diodes
• Material Properties of GaN in the Context of Electronic Devices
• Near Defect Free GaN Substrates
• Dry and Wet Etching for Group III-Nitrides
• Contact Issues for GaN Technology
• Pyroelectric and Piezoelectric Properties of GaN-Based Materials
• Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers
• GaN Homoepitaxy for Device Applications
• Doping of AlGaN Alloys
• Etch Processing of III-V Nitrides
• Damage-Free Photoassisted Cryogenic Dry Etching and Photoelectrochemical Wet Etching of GaN
• Focused Ion Beam Micromachining of GaN Photonic Devices
• Luminescence From Erbium-Doped Gallium Nitride Thin Films
• RBS Lattice Site Location and Damage Recovery Studies on Er Implanted GaN
• Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium-Doped GaN
• Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy
• Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitxy
• Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by MBE
• Defect Luminescence in Heavily Mg-Doped GaN
• Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers
• Mechanisms of Optical Gain in Cubic GaN and InGaN
• Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown InGaN Epilayers and InGaN/GaN Quantum Wells
• Mechanism for Radiative Recombination in InGaN/GaN Multiple Quantum Wells
• Spectroscopic Studies in InGaN Quantum Wells
• Composition Dependence of the Band Gap Energy of In_xGa_1-xN Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition
• Optical Gain Spectra in GaN/InGaN Quantum Wells with the Compositional Fluctuations
• Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via MOVPE
• Influence of Active Nitrogen Species on the Nitridation Rate of Sapphire
• Structural Study of GaN(As,P) Layers Grown on (0001) GaN by Gas Source Molecular Beam Epitaxy
• GaN Growth by Remote Plasma MOCVD: Chemistry and Kinetics by Real Time Ellipsometry
• Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth
• Electrical and Photoelectrical Characterization of Deep Defects in Cubic GaN on GaAs
• Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells
• Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy
• Characterization of Be-Implanted GaN Annealed At High Temperatures
• Thermal Residual Stress Modeling in AlN and GaN Multilayer Samples
• Strong Piezoelectric Effects in Unstrained GaN Quantum Wells
• Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate
• Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
• Growth of Oriented Thick Films of Gallium Nitride From the Melt
• p- and n- Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
• Cubic InGaN Grown by MOCVD
• Optical Investigations of AlGaN on GaN Epitaxial Films
• Extended Defects in GaN: A Theoretical Study
• Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence
• Electron Beam Induced Impurity Electro-Migration in Unintentionally Doped GaN
• Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy
• Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy
• Pendeo-Epitaxy - A New Approach for Lateral Growth of GaN Structures
• Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD
• Nitridation of GaAs(001) Surface Studied by Auger Electron Spectroscopy
• High Quality Hydrothermal ZnO Crystals
• Disordering of InGaN/GaN Superlattices After High-Pressure Annealing
• Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor Deposition
• Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE
• Effects of Susceptor Geometry on GaN Growth on Si(111) with a New MOCVD Reactor
• Structure of MOVPE Deposited AlN on Si(111)
• Influence of Doping on the Lattice Dynamics GaN
• Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties
• Properties of Epitaxial ZnO Thin Films for GaN and Related Applications
• Comparative Growth of AlN on Singular and Off-Axis 6H and 4h-SiC by MOCVD
• Gallium Nitride Growth Using Diethylgallium Chloride As An Alternative Gallium Source
• Piezoelectric Level Splitting in GaInN/GaN Quantum Wells
• Photoluminescence Excitation Spectroscopy of Carbon-Doped Gallium Nitride
• GaN CVD Reactions: Hydrogen and Ammonia Decomposition and the Desorption of Gallium
• Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum Wells
• Temperature Effect on the Quality of AlN Thin Films
• Enhanced GaN Decomposition At MOVPE Pressures
• Defect States in SiC/GaN -and SiC/GaN /AlGaN- Heterostructures Characterized by Admittance and Photocurrent Spectroscopy
• Microstructure of GaN Grown on (111) Si by MOCVD
• Ion Channeling Analysis of Gallium Nitride Implanted with Deuterium
• Optical Properties of Si-Doped Al_xGa_1-xN/Al_yGa_1-yN (x=0.24-0.53, y=0.11) Multi-Quantum-Well Structures
• Epitaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates
• Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE
• Relaxation Phenomena in GaN/ AlN / 6H-SiC Heterostructures
• Growth and Characterization of B_xGa_1-xN on 6H-SiC (0001) by MOVPE
• Epitaxial Growth and Structural Characterization of Single Crystalline ZnGeN₂
• Optical and Structural Properties of Er³⁺-Doped GaN Grown by MBE
• Cubic GaN Heteroepitaxy on Thin-SiC Covered Si(001)
• Selective Area Growth and Epitaxial Lateral Overgrowth of GaN Using Tungsten Mask
• Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy
• Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates
• Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process
• TEM Study of Defects in Laterally Overgrown GaN Layers
• Chloride-Based Growth Chemistries for Epitaxial Lateral Overgrowth of GaN in Both Hydride and Metalorganic Vapor Phase Epitaxy
• GaN: From Selective Area Epitaxy To Epitaxial Lateral Overgrowth
• Process Routes for Low-Defect Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques
• Computational Materials Science, An Increasingly Reliable Engineering Tool: Anomalous Nitride Band Structures and Device Consequences
• A Critical Comparison Between MBE and MOVPE Growth of III-V Nitride Heterostructures for Optoelectronic Device Applications
• Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN Alloys
• Novel Defect Complexes and Their Role in p-Type Doping of GaN
• Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaN
• Persistent Photoconductivity and Optical Quenching in GaN-AlGaN-Films: Spectral Dependence and Interface Effects
• Studies on Carbon As Alternative p-Type Dopant for GaN
• The Behavior of Ion-Implanted Hydrogen in Gallium Nitride
• Spectroscopy of Proton Implanted GaN
• Electronic Structure and Optical Properties of ZnGeN₂
• Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation
• DLTS Characterization of Defects Introduced During Sputter Deposition of Au Schottky Contacts on n-GaN
• Photoluminescence of FS-GaN Treated in Alcoholic Sulfide Solutions
• Effects of Oxygen Ion Implantation in Gallium Nitride
• Characteristic Temperature Estimation for GaN-Based Lasers
• Piezoelectric Field Effect on Optical Properties of GaN/GaInN/AlGaN Quantum Wells
• Control of the Polarity and Surface Mophology of GaN Film Deposited on C-Plane Sapphire
• Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well
• XPS Study of Oxygen Adsorption on (3x3) Reconstructed MBE Grown GaN Surfaces
• Thermal Stability of GaN Investigated by Raman Scattering
• Electroluminescence Properties of InGaN/AlGaN/GaN Light Emitting Diodes with Multiple Quantum Wells
• GaN Nanotubes
• Electrical Characterization of MOVPE-Grown p-Type GaN:Mg Against Annealing Temperature
• Rapid Thermal Processing of Implanted GaN Up To 1500°C
• Extrinsic Performance Limitations in AlGaN/GaN Heterostucture Field Effect Transistors
• Behavior of W and WSi_x Contact Metallization on n- and p-Type GaN
• Characterization of Hot-Electron Effects on Flicker Noise in III-V Nitride Based Heterojunctions
• Photoelectrochemical Etching of In_xGa_1-xN
• Simulation of a GaN Based Static Induction Transistor
• Contact Resistance of InGaN/GaN Light Emitting Diodes Grown on the Production Model Multi-Wafer MOVPE Reactor
• Crystal Structure and Defects in Nitrogen-Deficient GaN
• Influence of Si-Doping on Carrier Localization of MOCVD-Grown InGaN/GaN Multiple Quantum Wells
• Theory of the Gain Characteristics of InGaN/AlGaN QD Lasers
• Study of Thin Films Polarity of Group III Nitrides
• Temperature Dependence of Bound Exciton Emissions in GaN
• Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon
• NiIn As An Ohomic Contact To p-GaN
• Characterization of Flicker Noise in GaN Based Modfets At Low Drain Bias
• GaN p-n Structures Fabricated by Mg Ion Implantation
• Amplification Path Length Dependence Studies of Stimulated Emission From Optically Pumped InGaN/GaN Multiple Quantum Wells
• Inductively Coupled Plasma Etching of III-Nitrides in Cl₂/Xe, Cl₂/Ar and Cl₂/He
• Focused Ion Beam Etching of GaN
• Physics-Based Intrinsic Model for AlGaN/GaN HEMTs
• Ensemble Monte Carlo Study of Electron Transport in Bulk InN
• Monte Carlo Simulation of Hall Effect in n-Type GaN
• Phonon Dynamics and Lifetimes of AlN and GaN Crystallites
• Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs
• Theoretical Study of ZnO and Related Mg_xZn_1-xO Alloy Band Structures
• Transport, Growth Mechanisms, and Material Quality in GaN Epitaxial Lateral Overgrowth
• Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDs
• Fabrication of Smooth GaN-Based Laser Facets
• Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated From 3-Inch Epitaxy
• Monitoring and Controlling of Strain During MOCVD of AlGaN for UV Optoelectronics
• Generation Recombination Noise in GaN Photoconductors
• Group-III Nitride Etch Selectivity in Boron Trichloride/Chlorine ICP Plasmas
• Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)
• Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy
• Piezoelectric Properties of GaN Self-Organized Quantum Dots
• Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-Surfactant
• Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy
• Ni/Si-Based Contacts To GaN: Thermally Activated Structural Transformations Leading To Ohmic Behavior

2000

• The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in In_xGa_1-xN quantum wells
• Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE
• A Review of Dry Etching of GaN and Related Materials
• Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers
• Current limitation after pinch-off in AlGaN/GaN FETs
• Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
• Improvements in Bis(cyclopentadienyl)magnesium Purity as Determined with Gas Chromatography-Mass Spectroscopy
• Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides
• UV-Specific (320-365 nm) Digital Camera Based On a 128x128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
• Preparation of Sapphire for High Quality III-Nitride Growth
• Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN.
• Solar-Blind AlGaN Heterostructure Photodiodes
• High-Quality Al_xGa_1-xN Using Low Temperature-Interlayer and its Application to UV Detector
• Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers
• Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire
• Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes
• Spatially Resolved Electroluminescence of InGaN-MQW-LEDs
• High Reflectance III-Nitride Bragg Reflectors Grown by Molecular Beam Epitaxy
• High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays
• Characteristics of Ti/Pt/Au Ohmic Contacts on p-Type GaN/A1xGA1-xN Superlattices
• High-Quality Non-Alloyed Pt Ohmic Contacts to p-Type GaN Using Two-step Surface Treatment
• Electrical Measurements in GaN: Point Defects and Dislocations
• Properties and Effects of Hydrogen in GaN
• Lattice Location of Deuterium in Plasma and Gas Charged Mg Doped GaN
• Surface Conversion Effects in Plasma-Damaged p-GaN
• Zirconium Mediated Hydrogen Outdiffusion from p-GaN
• A Comparative Study of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN/Sapphire Substrates
• Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas
• Correlation Between Sheet Carrier Density-Mobility Product and Persistent Photoconductivity In AlGaN/GaN Modulation Doped Heterostructures
• Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETs
• New Materials-Theory-Based Model for Output Characteristics of AlGaN/GaN Heterostructure Field Effect Transistors
• Temperature Distribution in InGaN-MQW LEDs Under Operation
• Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam Epitaxy
• Electron Beam Pumping in Nitride Vertical Cavities With GaN/A10.25Ga0.75 Bragg Reflectors
• Microstructure-based Lasing in GaN/AlGaN Separate Confinement Heterostructures
• Dependence of Aging on Inhomogeneities in InGaN/AlGaN/GaN Light-Emitting Diodes
• Pulsed-Laser-Deposited AlN Films for High-Temperature SiC MIS Devices
• The Formation of In-Rich Regions at the Periphery of the Inverted Hexagonal Pits of InGaN Thin-Films Grown by Metalorganic Vapor Phase Epitaxy
• Emission Enhancement of GaN/AlGaN Single-Quantum-Wells Due to Screening of Piezoelectric Field
• Correlation Between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy
• Optical Properties of AlGaN Quantum Well Structures
• Comparative Study of Structural Properties and Photoluminescence in InGaN Layers with a High In Content
• Phonons and Free Carriers in a Strained Hexagonal GaN-AlN Superlattice Measured by Infrared Ellipsometry and Raman Spectroscopy
• Optical Spectroscopy of InGaN Epilayers in the Low Indium Composition Regime
• Photoluminescence Characterization of Mg Implanted GaN
• An Investigation of Long and Short Time-Constant Persistent Photoconductivity in Undoped GaN Grown by RF-Plasma Assisted Molecular Beam Epitaxy
• The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High-Temperature Annealing of Ion-Implanted GaN Films
• Prism Coupling as a Non-Destructive Tool for Optical Characterization of (Al,Ga) Nitride Compounds
• Fabrication and Characterization of Metal-Ferroelectric-GaN Structures
• Deep Level Related Yellow Luminescence in p-type GaN Grown by MBE on (0001) Sapphire
• A Study of Annealed GaN Grown by Molecular Beam Epitaxy Using Photoluminescence Spectroscopy
• Nonlinear Optical Characterization of GaN Layers Grown by MOCVD on Sapphire
• Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model
• Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial Overgrowth
• The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN Grown on MOCVD GaN/sapphire Templates
• Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films
• Time-Resolved Spectroscopy of InGaN
• Photoluminescence Enhancement and Morphological Properties of Carbon Co-Doped GaN:Er
• Photoluminescence and Cathodoluminescence of GaN Doped With Pr
• Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)
• High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
• Processing And Device Performance Of GaN Power Rectifiers
• Comparison of Implant Isolation Species for GaN Field-Effect Transistor Structure
• Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining
• Wet Etching of Ion-Implanted GaN Crystals by AZ-400K Photoresist
• Oxidation of Gallium Nitride Epilayers in Dry Oxygen
• A Damage-Reduced Process Revealed by Photoluminescence in Photoelectrochemical Etching GaN
• Fabrication and Characterization of InGaN Nano-Scale Dots for Blue and Green LED Applications
• The Microstructure and Electrical Properties of Directly Deposited TiN Ohmic Contacts to Gallium Nitride
• Highly Chemical Reactive Ion Etching of Gallium Nitride
• Improved Low Resistance Contacts of Ni/Au and Pd/Au to p-Type GaN Using a Cryogenic Treatment
• A Thermodynamic Approach to Ohmic Contact Formation to p-GaN
• Metal/GaN Contacts Studied by Electron Spectroscopies
• Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN Heterostructures
• Deep Levels in n-Type Schottky and p+-n Homojunction GaN Diodes
• Deep Centers and Persistent Photoconductivity Studies in Variously Grown GaN Films
• Fermi Level Pinning at GaN-Interfaces: Correlation of Electrical Admittance and Transient Spectroscopy
• Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy
• Low-Frequency Noise in SiO2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates
• Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and Their Optical Characterization by Micro-Photoluminescence/Raman Mapping
• Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures
• Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum Wells
• Comparison Study of Structural and Optical Properties of In_xGa_1-xN/GaN Quantum Wells With Different In Compositions
• Emission at 247 nm from GaN Quantum Wells Grown by MOCVD
• Identification of As, Ge and Se Photoluminescence in GaN Using Radioactive Isotopes
• Pendeo-Epitaxial Growth and Characterization of GaN and Related Materials on 6H-SiC(0001) and Si(111) Substrates
• Dislocation Arrangement in a Thick LEO GaN Film on Sapphire
• Fabrication of GaN With Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE
• Advanced PENDEOEPITAXY™ of GaN and Al_xGa_1-xN Thin Films on SiC(0001) and Si(111) Substrates via Metalorganic Chemical Vapor Deposition
• A TEM Study of GaN Grown by ELO on (0001) 6H-SiC
• Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy
• Mass Transport, Faceting and Behavior of Dislocations in GaN
• Integration of PLZT and BST Family Oxides with GaN
• HVPE and MOVPE GaN Growth on Slightly Misoriented Sapphire Substrates
• Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown 'Templates'
• The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GaN
• Visible and Infrared Emission of GaN:Er Thin Films Grown by Sputtering
• Growth Kinetics of GaN Thin Films Grown by OMVPE Using Single Source Precursors
• Optical Properties of Manganese Doped Amorphous and Crystalline Aluminum Nitride Films
• A Study of the Effect of V/III Flux Ratio and Substrate Temperature on the In Incorporation Efficiency in InxGa1-x/GaN Heterostructures Grown by RF Plasma-Assisted Molecular Beam Epitaxy
• Surface Morphology of GaN: Flat Versus Vicinal Surfaces
• Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction
• Growth of InN by MBE
• Evidence from EELS of Oxygen in the Nucleation Layer of an MBE Grown III-N HEMT
• Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma Sources
• MBE Growth Of GaN Films In Presence Of Surfactants: The Effect Of Mg And Si
• The Effect of Al in Plasma-Assisted MBE-Grown GaN
• Electrical Properties of Cubic InN and GaN Epitaxial Layers as Function of Temperature
• Role of Arsenic Hexagonal Growth-Suppression on a Cubic GaNAs Growth Using Metalorganic Chemical Vapor Deposition
• Metal Organic Vapor Phase Epitaxy of GaAsN/GaAs Quantum Wells Using Tertiarybutylhydrazine
• TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE
• Microstructure and Physical Properties of GaN Films on Sapphire Substrates
• Structural Evolution of GaN During Initial Stage MOCVD Growth
• Structural Properties of (GaIn)(AsN)/GaAs MQW Structures Grown by MOVPE
• Formation and Stability of the Prismatic Stacking Fault in Wurtzite (Al,Ga,In) Nitrides
• GaN Decomposition in Ammonia
• Surface Activity of Magnesium During GaN Molecular Beam Epitaxial Growth
• Simulations of Defect-Interface Interactions in GaN
• Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin Al_xGa_1-xN Layers Grown by MOCVD
• Structural Properties of Laterally Overgrown GaN
• Electrical Properties of Oxygen Doped GaN Grown by Metalorganic Vapor Phase Epitaxy
• Optical and Electrical Properties of MBE Grown Cubic GaN/GaAs Epilayers Doped by Si
• Activation of Beryllium-Implanted GaN by Two-Step Annealing
• Co-Doping Characteristics of Si and Zn with Mg in p-Type GaN
• Efficient Acceptor Activation in Al_xGa_1-xN/GaN Doped Superlattices
• Doping Dependence of the Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001) Using a Scanning Thermal Microscope
• High Temperature Hardness of Bulk Single Crystal GaN
• AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties
• Negative Differential Conductivity in AlGaN/GaN HEMTs: Real Space Charge Transfer from 2D to 3D GaN States?
• Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors
• High-Temperature Reliability of GaN Electronic Devices
• Fabrication and Characterization of GaN Junction Field Effect Transistors
• Probing Nitride Thin Films in 3-Dimensions Using a Variable Energy Electron Beam
• TEM Study of Bulk AlN Growth by Physical Vapor Transport
• Thermal Expansion of GaN at Low Temperatures - A Comparison of Bulk and Homo- and Heteroepitaxial Layers
• The Role of the Multi Buffer Layer Technique on the Structural Quality of GaN
• MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics
• Homoepitaxial Growth on Misoriented GaN Substrates by MOCVD
• AlN Wafers Fabricated by Hydride Vapor Phase Epitaxy
• GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique
• Preparation and Characterization of Single-Crystal Aluminum Nitride Substrates
• Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes
• High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy Using a Thin Low-Temperature AlN Layer
• High-Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
• MBE Growth of Nitride-Arsenide Materials for Long Wavelength Optoelectronics
• Structural and Electronic Properties of Line Defects in GaN
• Simulation of H Behavior in p-GaN(Mg) at Elevated Temperatures
• Mg Segregation, Difficulties of P-Doping in GaN
• Optical Activation Behavior of Ion Implanted Acceptor Species in GaN

2001

• Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN
• Electrical Profiles in GaN/Al₂O₃ Layers with Conductive Interface Regions
• Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory
• On the origin of the 2.8 eV blue emission in p-type GaN:Mg : A time-resolved photoluminescence investigation
• Visible Luminescent Activation of Amorphous AlN:Eu Thin-Film Phosphors with Oxygen
• Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
• Electronic Properties of Ga(In)NAs Alloys
• High Temperature Elastic Constant Prediction of Some Group III-Nitrides
• High-temperature structural behavior of Ni/Au Contact on GaN(0001)
• New Technique for Sublimation Growth of AlN Single Crystals
• Influence of Poisson’s ratio uncertainty on calculations of the bowing parameter for strained InGaN layers
• Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates
• Room Temperature Ohmic contact on n-type GaN using plasma treatment
• Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy

2002

• Modeling GaN Growth by Plasma Assisted MBE in the Presence of Low Mg Flux

Acta Chemica Scandinavica

1971

• Gas phase electron diffraction investigation of the molecular structures of trimethylaluminum monomer and dimer

1972

• On the molecular structure of the complex trimethylaluminium-trimethylamine

1982

• The molecular structures of trimethylindium and trimethylthallium determined by gas electron diffraction

Acta metallurgica

1989

• On the stability of surfaces of stressed solids

Acta Crystallographica

1965

• The Crystal Structure and Anomalous Dispersion of γ-LiAlO₂

Abstracts of Papers of the American Chemical Society

1993

• Computational Studies of the Role of Polytypism in Nanocrystalline Gallium Nitride

American Ceramics Society Bulletin

1985

• Elastic properties of SiC, AlN, and their solid solutions and particulate composites

Advances in Physics

1971

• Long Wavelength Optical Phonons in Mixed Crystals

AIP Conference Proceedings

1994

• Crystal growth of III-N semiconductors under high nitrogen pressure
• Equation of state and pressure-induced phase transition of III-V nitrides
• New high pressure phases of the III-V compounds AlN, GaN, InN

American Mineralogist

1980

• Computing and drawing crystal shapes

Applied Optics

1998

• GaN-based solar-ultraviolet detection instrument

Applied Physics A

1995

• Silver Schottky contacts on Si(111):H-1x1 surfaces prepared bywet-chemical etching
• Current Spreading and Series Resistance of Proton-Implanted Vertical‐Cavity Top-Surface-Emitting Lasers

1997

• Luminescence conversion of blue light emitting diodes

Applied Crystallography

1995

• Absolute Lattice-Parameter Measurement

Acta Physica Polonica A

1995

• High Pressure Crystallization of Iii-v Nitrides
• Epitaxial Layers Versus Bulk Single Crystals of GaN: Temperature Studies of Lattice Parameters and Energy Gap
• Photoluminescence Study of GaN

1996

• Doping properties of amphoteric C, Si, and Ge impurities in GaN and AlN
• On GaN crystallization by ammonothermal method
• Shallow donors and acceptors in GaN; bound excitons and pair spectra

1997

• Two-electron transition in homoepitaxial GaN layers

Applied Physics Letters

1962

• Stimulated emission of radiation from GaAs p-n junctions

1964

• Flux Growth, Czochralski Growth, and Hydrothermal Synthesis of Lithium Metagallate Single Crystals

1968

• Vacuum deposition of AlN acoustic transducers

1969

• The preparation and properties of vapor-deposited single-crystal-line GaN

1970

• Optical absorption of GaN

1971

• Stimulated emission and laser action in gallium nitride

1972

• Electrical and optical properties of rf-sputtered GaN and InN

1973

• Violet luminescence of Mg-doped GaN
• Raman scattering in thin film waveguides
• Acoustic surface wave properties of epitaxially grown aluminum nitride and gallium nitride on sapphire

1974

• rf-sputtered aluminum nitride films on sapphire
• Photoluminescence of Zn-implanted GaN
• Photoemission from GaN
• Secondary electron emission from the GaN:Cs-O surface
• Optical investigations of Zn, Hg, and Li doped GaN

1975

• Epitaxial growth of aluminum nitride films on sapphire by reactive evaporation
• Monte Carlo calculation of the velocity-field relationship for gallium nitride

1976

• Ultraviolet electroluminescence in AlN

1977

• Efficient injection mechanism for electroluminescence in GaN
• Nonlinear optical susceptibilities of AlN film

1978

• Reactive sputtering of gallium nitride thin films for GaAs MIS structures
• The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor process

1982

• Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth
• Lateral Epitaxial Overgrowth of GaAs by Organometallic Chemical Vapor Deposition,
• A new silicon-on-insulator structure using molecular beam epitaxial growth on porous silicon

1983

• Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AIN-coated sapphire substrates
• Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor deposition
• Deactivation of the boron acceptor in silicon by hydrogen
• Properties and ion implantation of Al(x)Ga(1-x)N epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition
• Quantitative ion beam process for the deposition of compound thin films
• 1.0 GHz thin-film acoustic wave resonator on GaAs

1985

• Effect of Substrate Temperature on the Doping Profiles of Si in Selectively doped AlGaAs/GaAs/AlGaAs Double Heterojuction Structures

1986

• Growth of GaN films using trimethylgallium and hydrazine
• Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
• Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
• Growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxy
• Optical Gain in GaInN/GaN Heterostructures

1987

• Molecular beam epitaxial growth of CoSi₂ on porous Si

1988

• Disk hydrogen plasma assisted chemical vapor deposition of aluminum nitride
• Reflection mass spectrometry of As incorporation during GaAs molecular beam epitaxy
• Parameters for in situ growth of high Tc superconducting thin films using an oxygen plasma source

1989

• Heteroepitaxial growth of InN by microwave-excited metalorganic chemical vapor phase epitaxy
• Al_xGa_1-xN polarity determination by x-ray diffraction

1990

• Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wells
• Nitrogen pair luminescence in GaAs
• Direct demonstration of a misfit strain-generated electric field in a [1 1 1] growth axis zinc-blende heterostructure
• Effects of Peierls barrier and epithreading dislocation orientation on the critical thickness in heteroepitaxial structures
• Ultraviolet reflectance of AlN, diamond-like carbon, and SiC thin films
• Gallium desorption from GaAs and (Al,Ga)As during molecular beam epitaxy growth at high temperatures

1991

• Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low- pressure metalorganic chemical vapor deposition
• Novel metalorganic chemical vapor deposition system for GaN growth
• Electrical properties of GaAs/GaN/GaAs semiconductor- insulator-semiconductor structures
• High electron mobility GaN/Al_xGa_1-xN heterostructures grown by low-pressure metalorganic chemical vapor deposition
• Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition
• Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy
• Reflective filters based on single-crystal GaN/Al_xGa_1-xN multilayers deposited using low-pressure metalorganic chemical vapor deposition
• breakdown characteristics of SiC diodes
• Overgrowth of indium nitride thin films on aluminum nitride nucleated (00.1) sapphire by reactive magnetron sputtering
• Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy
• Hot filament enhanced chemical vapor deposition of AlN thin films
• Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

1992

• Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition
• High quality GaAs on Si by conformal growth
• Synthesis of metastable epitaxial zincblende-structure AlN by solid-state-reaction
• Growth of GaN(0001)1 (times) 1 on Al₂O₃(0001) by gas-source molecular beam epitaxy
• High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers
• Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-Al_xGa_1-xN heterojunctions
• Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

1993

• Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin films
• Growth of GaAsN alloys by low-pressure metalorganic chemical vapor deposition using plasma-cracked NH₃
• Metal semiconductor field effect transistor based on single crystal GaN
• High-power InGaN/GaN double-heterostructure violet light emitting diodes
• Metal contacts to gallium nitride
• A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma-assisted molecular-beam epitaxy
• Ultraviolet and violet light-emitting GaN diodes grown by low-pressure metalorganic chemical vapor deposition
• Ultraviolet and violet light-emitting GaN diodes grown by low-pressure metaorganic chemical vapor deposition
• GaN grown on hydrogen plasma cleaned 6H-SiC substrates
• Electron transport mechanism in gallium nitride
• Reversible changes in doping of InGaAlN alloys induced by ion implantation or hydrogenation
• high breakdown SiC diodes
• High electron mobility transistor based on a GaN-Al_xGa_1-xN heterojunction
• Band gap bowing in GaP_1-xN_x alloys
• Strain and charge distribution in GaN-AlN-GaN semiconductor-insulator-semiconductor structure for arbitrary growth orientation
• Schottky barrier photodetector based on Mg-doped p-type GaN films
• Formation of gallium nitride by a novel hot mechanical alloying process
• Observation of optically detected magnetic resonance in GaN films
• Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy
• Reactive ion etching of gallium nitride in silicon tetrachloride plasmas
• Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces
• GaN/AlN digital alloy short-period superlattices by switched atomic layer metalorganic chemical vapor deposition
• Metalorganic vapor phase epitaxy of GaP_1-xN_x alloys on GaP
• Thermal stability of GaN investigated by low-temperature photoluminescence spectroscopy
• Tailoring of Internal Fields in Ingaas/Gaas Multiwell Structures Grown On (111)B Gaas
• p-type zinc-blende GaN on GaAs substrates
• Comparison of the physical properties of GaN thin films deposited on (0001) and (0112) sapphire substrates
• Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxy

1994

• Low resistance ohmic contacts on wide band-gap GaN
• Observation of stimulated emission in the near ultraviolet from a molecular beam epitaxy grown GaN film on sapphire in a vertical-cavity, single pass configuration
• Epitaxial Solid-Solution Films of Immiscible MgO and CaO
• Room-temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructure
• Optical gain of optically pumped Al_0.1Ga_0.9N/GaN double heterostructure at room temperature
• Candela-class high-brightness InGaN/AlGaN double- heterostructure blue-light-emitting diodes
• Self organized growth of regular nanometer-scale InAs dots on GaAs
• Temperature-dependent electron mobility in GaN: Effects of space charge and interface roughness scattering
• Hydrogenation of p-type gallium nitride
• Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN
• Nonalloyed ohmic contacts on GaN using InN/GaN short- period superlattices
• Hydrogenation of GaN, AlN, and InN
• Heteroepitaxial Growth of InN on AlN Nucleated (00.1) Sapphire by Ultrahigh Vacuum Electron Cyclotron Resonance Assisted Reactive Magnetron Sputtering
• Photoluminescence of zinc-blende GaN under hydrostatic pressure
• Optical properties near the band gap on hexagonal and cubic GaN
• Molecular-beam-epitaxy growth of GaN on GaAs(100) by using reactive nitrogen source
• Intensity dependence of photoluminescence in GaN thin films
• Simulations for the high-speed response of GaN metal- semiconductor-metal photodetectors
• Dry patterning of InGaN and InAlN
• p-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg
• Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers
• Reactive ion etching of GaN using BCl₃
• GaN epitaxial layers grown on 6H-SiC by the sublimation sandwich technique
• Microwave performance of a 0.25 mu m gate AlGaN/GaN heterostructure field effect transistor
• High-quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition
• High quality self-nucleated Al_xGa_1-x N layers on (00.1) sapphire by low-pressure metalorganic chemical vapor deposition
• Determination of the GaN/AlN band offset via the (-/0) acceptor level of iron
• Conduction-Band Engineering in Piezoelectric[111] Multiple- Quantum-Well P-I-N Photodiodes
• Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers
• Low-temperature epitaxial growth and photoluminescence characterization of GaN
• Low pressure metalorganic chemical-vapor deposition of cubic GaN over (100) GaAs substrates
• Comparison of Optical Nonlinearities in Piezoelectric Strained [111]-Grown and [001]-Grown (in,Ga)As (Al,Ga)As Quantum-Wells,
• Deep level defects in n-type GaN
• Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature
• p-type conduction in Mg-doped GaN and Al_0.08Ga_0.92N grown by metalorganic vapor phase epitaxy
• Microstructure and photoluminescence of GaN grown on Si(111) by plasma-assisted molecular beam epitaxy
• Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy
• High quality Al_xGa_1-xN grown by metalorganic chemical vapor deposition using trimethylamine alane as the aluminum precursor
• Characteristics of chemically assisted ion beam etching of gallium nitride
• Growth by molecular beam epitaxy and electrical characterization of Si-doped zinc blende GaN films deposited on beta -SiC coated (001) Si substrates
• 1.54-mu m photoluminescence from Er-implanted GaN and AlN

1995

• Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphire
• Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300C
• p-type conduction in Mg-doped Ga_0.91In_0.09N grown by metalorganic vapor-phase epitaxy
• Calculated second-harmonic susceptibilities of BN, AlN, and GaN
• High dislocation densities in high efficiency GaN-based light-emitting diodes
• Microstructural characterization of alpha -GaN films grown on sapphire by organometallic vapor phase epitaxy
• Photoemission capacitance transient spectroscopy of n- type GaN
• Silicon doping of GaN using disilane
• Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy
• Use of InN for Ohmic contacts on GaAs/AlGaAs heterojunction bipolar transistors
• Electrical and structural properties of In_xGa_1-xN on GaAs
• High temperature electron cyclotron resonance etching of GaN, InN, and AlN
• CCl₄ doping of GaN grown by metalorganic molecular beam epitaxy
• Schottky-based band lineups for refractory semiconductors
• Electron Hall mobility of n-GaN
• Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p-type layers
• Epitaxial Growth of Cubic AlN Films on (100)silicon and (111)silicon by Pulsed Laser Ablation
• Thermal stability of implanted dopants in GaN
• Optical properties of GaN epitaxial films grown by low- pressure chemical vapor epitaxy using a new nitrogen source: Hydrazoic acid (HN₃)
• Blue-violet light emitting gallium nitride p-n junctions grown by electron cyclotron resonance-assisted molecular beam epitaxy
• Study of defect states in GaN films by photoconductivity measurement
• Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface
• High quality AlN and GaN epilayers grown on (00.1) sapphire, (100), and (111) silicon substrates
• Nitrogen and fluorine ion implantation in In_xGa_1-xN
• Bowing parameters for zinc-blende Al_1-xGa_xN and Ga_1-xIn_xN
• High etch rates of GaN with magnetron reactive ion etching in BCl₃ plasmas
• Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy
• Pressure-dependent photoluminescence study of wurtzite GaN
• Photoconductive ultraviolet sensor using Mg-doped GaN on Si(111)
• Initial stage of aluminium nitride film growth on 6H-silicon carbide by plasma-assisted, gas source molecular beam epitaxy
• Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates
• Temperature dependence of interband transitions in GaN grown by metalorganic chemical vapor deposition
• Photoluminescence of residual transition metal impurities in GaN
• AlGaN pn junctions
• Study of chemically assisted ion beam etching of GaN using HCl gas
• On p-type doping in GaN - acceptor binding energies
• Two-dimensional electron gas in GaN-AlGaN heterostructures deposited using trimethylamine-alane as the aluminum source in low pressure metalorganic chemical vapor deposition
• Ion implantation doping and isolation of GaN
• Photoluminescence decay dynamics in an InGaN/AlGaN/GaN double-heterostructure blue-light-emitting diode
• Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire
• a 4. 5 kV 6H SiC rectifier
• Neutral-donor-bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition
• GaN grown by molecular beam epitaxy at high growth rates using ammonia as the nitrogen source
• Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy
• Growth of Al_xGa_1-xN:Ge on sapphire and silicon substrates
• Electron-phonon interactions in the wide band-gap semiconductor GaN
• Reactive ion etching of GaN using CHF₃/Ar and C₂ClF₅/Ar plasmas
• Characterization of structural defects in wurtzite GaN grown on 6H SiC using plasma-enhanced molecular beam epitaxy
• High quality InGaN films by atomic layer epitaxy
• High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes
• Photovoltaic effects in GaN structures with p-n junctions
• Formation of threading defects in GaN wurtzite films grown on nonisomorphic substrates
• Mechanism of yellow luminescence in GaN
• Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high-resolution transmission electron microscopy
• Dry etch damage in InN, InGaN, and InAlN
• Paramagnetic resonance in GaN-based light emitting diodes
• Time-resolved exciton luminescence in GaN grown by metalorganic chemical vapor deposition
• Investigation of longitudinal-optical phonon-plasmon coupled modes in highly conducting bulk GaN
• Valence subband structures of wurtzite GaN/AlGaN quantum wells
• High-quality GaN epitaxial layer grown by metalorganic vapor phase epitaxy on (111) MgAl[sub 2]O₄ substrate
• Growth of AlN by metalorganic molecular beam epitaxy
• Study of Schottky barriers on n-type GaN grown by low- pressure metalorganic chemical vapor deposition
• Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition
• Surface-mode stimulated emission from optically pumped GaInN at room temperature
• Synthesis of GaN by N ion implantation in GaAs (001)
• Direct observation of transferred-electron effect in GaN
• Zeeman spectroscopy of the Fe³⁺ center in GaN
• Theory of optical gain in ideal GaN heterostructure lasers
• Acceptor-bound exciton recombination dynamics in p-type GaN
• Properties of a Si doped GaN/AlGaN single quantum well
• Excitonic recombination in GaN grown by molecular beam epitaxy
• Temperature-mediated phase selection during growth of GaN on (111)A and (111)B GaAs substrates
• Real and reciprocal space mapping of the mosaic dispersion in self-nucleated Al_xGa_1-xN thin films on (00.1) sapphire
• Kinetics of photoconductivity in n-type GaN photodetector
• Photoluminescence from wurtzite GaN under hydrostatic pressure
• GaN thin films deposited via organometallic vapor phase epitaxy on alpha (6H)-SiC(0001) using high-temperature monocrystalline AlN buffer layers
• Microstructure of GaN epitaxy on SiC using AlN buffer layers
• Spontaneous and stimulated emission from photopumped GaN grown on SiC
• Thermal and plasma-assisted nitridation of GaAs(100) using NH₃
• Growth of GaN films by hot wall epitaxy
• Sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs
• Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopy
• Theoretical prediction of GaN lasing and temperature sensitivity
• Theory of laser gain in group-III nitrides
• Exciton Lifetimes in GaN and InGaN
• Exciton lifetimes in GaN and GaInN
• Growth of device quality GaN at 550 (degrees) C by atomic layer epitaxy
• In-Well Screening Nonlinearities in Piezoelectric Multiple- Quantum Wells

1996

• Electron Cyclotron resonance etch characteristics of GaN in SiCl4/Ar
• Determination of the effective mass of GaN from infrared reflectivity and Hall effect
• Deposition of high quality wurtzite GaN films over cubic (111) MgAl₂O₄ substrates using low pressure metalorganic chemical vapor deposition
• Structural properties of GaN films grown on sapphire by molecular beam epitaxy
• High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN
• Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface
• Deep levels in the upper band-gap region of lightly Mg- doped GaN
• Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN
• Scanning tunneling microscopy and tunneling luminescence of the surface of GaN films grown by vapor phase epitaxy
• High-quality GaInN/GaN multiple quantum wells
• Near-Field Optical Data Storage
• Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures
• Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition
• Room-temperature photoenhanced wet etching of GaN
• Effective-mass Hamiltonian for strained wurtzite GaN and analytical solutions
• Very low resistance multilayer Ohmic contact to n- GaN
• Carbon-doped boron nitride cold cathodes
• Metastability and persistent photoconductivity in Mg- doped p-type GaN
• Role of hydrogen in doping of GaN
• Room-temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy
• Low interface trap density for remote plasma deposited SiO₂ on n-type GaN
• Mechanisms of band-edge emission in Mg-doped p-type GaN
• Ca and O ion implantation doping of GaN
• Morphology and photoluminescence improvements from high- temperature rapid thermal annealing of GaN
• New near-infrared defect luminescence in GaN doped with vanadium by ion implantation
• Hydrogen passivation of Ca acceptors in GaN
• InGaN multi-quantum-well structure laser diodes grown on MgAl₂O₄ substrates
• AlGaN ultraviolet photoconductors grown on sapphire
• Cleaved GaN facets by wafer fusion of GaN to InP
• Low Energy Electron Enhanced Etching of Semiconductors,
• Ion-implanted GaN junction field effect transistor
• Electric breakdown in GaN p-n junctions
• A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films
• Electrical characterization of Mg-doped GaN grown by metalorganic vapor phase epitaxy
• Resonant Raman scattering in hexagonal GaN
• Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs
• Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers
• Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy
• Strongly localized excitons in gallium nitride
• High quality InP on Si by conformal growth
• Growth defects in GaN films on 6H- SiC substrates
• Minority-carrier-enhanced reactivation of hydrogen- passivated Mg in GaN
• Residual strain in GaN epilayers grown on sapphire and (6H)SiC substrates
• Thermal annealing characteristics of Si and Mg-implanted GaN thin films
• Fundamental optical transitions in GaN
• 75 A GaN channel modulation doped field effect transistors
• Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light emitting diodes
• Measurement of AlN/GaN (0001) heterojunction band offsets by x-ray photoemission spectroscopy
• Theoretical study of room temperature optical gain in GaN strained quantum wells
• Nonequilibrium electron distributions and phonon dynamics in wurtzite GaN
• Hall measurements and contact resistance in doped GaN/AlGaN heterostructures
• Growth and characterization of bulk InGaN films and quantum wells
• Activation energies of Si donors in GaN
• Response to ``Comment on `Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature' '' [Appl. Phys. Lett. 68, 3197 (1996)]
• Comment on ``Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature'' [Appl. Phys. Lett. 65, 520 (1994)]
• Growth and properties of scandium epitaxial films on GaN
• Characteristics of InGaN multi-quantum-well-structure laser diodes
• Growth of GaN on sapphire (0001) using a supersonic jet of plasma-generated atomic nitrogen
• Novel symmetry in the growth of gallium nitride on magnesium aluminate substrates
• X-ray crystallographic study of GaN epitaxial films on Al₂O₃(0001) substrates with GaN buffer layers
• Deep level defects in Mg-doped, p-type GaN grown by metalorganic chemical vapor deposition
• Morphology of luminescent GaN films grown by molecular beam epitaxy
• Preparation of GaN films on sapphire by metalorganic chemical vapor deposition using dimethylhydrazine as nitrogen source
• Electron cyclotron resonance etching characteristics of GaN in SiCl₄/Ar
• Optical gain in GaInN/GaN heterostructures
• The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer
• High responsitivity intrinsic photoconductors based on Al_xGa_1-xN
• Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers
• Deep level defects in n-type GaN compensated with Mg.
• Thermally stimulated current trap in GaN
• Growth and characterization of AlInGaN quaternary alloys
• Dynamics of bound-exciton luminescences from epitaxial GaN
• Study of deep level defects in n-GaN by the optical transmission method
• Refractive indices of zincblende structure beta - GaN(001) in the subband-gap region (0.7-3.3 eV)
• Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors
• Penetration depth measurements of single-crystal NbN films at millimeter-wave region
• Spatial distribution of the luminescence in GaN thin films
• Picosecond four-wave-mixing in GaN epilayers at 532 nm
• Electrical properties of boron nitride thin films grown by neutralized nitrogen ion assisted vapor deposition
• Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films
• Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition
• Effect of rapid thermal annealing on the electrical and physical properties of metalorganic chemical vapor deposited TiN
• Photoassisted dry etching of GaN
• Piezoresistive effect in wurtzite n-type GaN
• Etching of InP at >1μm·min⁻¹ inCl₂/Ar plasma chemistries
• Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition
• Highly resistive CH-doped GaN grown by plasma-assisted metalorganic chemical vapor deposition
• Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN films
• Selective growth of gallium nitride layers with a rectangular cross-sectional shape and stimulated emission from the optical waveguides observed by photopumping
• An optically pumped GaN- AlGaN vertical cavity surface emitting laser
• Inductively coupled plasma etching of GaN
• Mechanisms of recombination in GaN photodetectors
• Influence of Surface Defects on the Characteristics of GaN Schottky Diodes
• Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field-effect transistors
• Intrinsic optical properties of GaN epilayers grown on SiC substrates: Effect of the built-in strain
• Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions
• Synthesis of ultrafine gallium nitride powder by the direct current arc plasma method
• Photocurrent decay in n-type GaN thin films
• Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer
• Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation-doped field-effect transistors
• ICl/Ar electron cyclotron resonance plasma etching of III-V nitrides
• Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
• Ridge-geometry InGaN MQW structure laser diodes
• Nature of Mg impurities in GaN
• Microstructure of Ti/Al and Ti/Al/Ni/Au contacts for n-GaN
• Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes,
• Time-dependent study of low energy electron beam irradiation of Mg-doped GaN grown by metalorganic chemical vapor
• Light scattering in high-dislocation-density GaN
• Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double- heterostructure blue light-emitting diodes
• Room temperature epitaxy of Pd films on GaN under conventional vacuum conditions
• Optical patterning of GaN films
• Transverse modes and lasing characteristics of selectively grown vertical cavity semiconductor lasers
• Reactivation of acceptors and trapping of hydrogen in GaN/InGaN double heterostructures
• Radiative recombination lifetime measurements of InGaN single quantum well
• Low temperature inorganic chemical vapor deposition of heteroepitaxial GaN.
• Realization of optically pumped second-order GaInN-distributed-feedback lasers
• Real-time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry
• Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers
• Time-resolved photoluminescence studies of GaN epilayers grown by gas source molecular beam epitaxy on an AlN buffer layer on (111) Si
• Electroluminescence from erbium and oxygen coimplanted GaN
• Transient photocurrent induced in gallium nitride by two-photon absorption
• Metalorganic chemical vapor deposition of monocrystalline GaN thin films on beta- LiGaO[sub 2] substrates
• SiC rapid thermal carbonization of the (111)Si semiconductor-on-insulator structure and subsequent metalorganic chemical vapor deposition of GaN
• Amphoteric properties of substitutional carbon impurity in GaN and AlN.
• Critical thickness of GaN thin films on sapphire (0001)
• Damage to epitaxial GaN layers by silicon implantation
• Growth and properties of In_xGa _1-xN/Al_yGa _1-yN multiquantum wells developed by molecular beam epitaxy
• Inversion domains in GaN grown on sapphire
• Surface reconstruction of zinc-blende GaN
• Cleaved cavity optically pumped InGaN(en-dash) GaN laser grown on spinel substrates
• Laser diodes in piezoelectric quantum-well structures
• Electronic and structural properties of GaN grown by hydride vapor phase epitaxy.
• Optical transitions in GaN/Al_xGa_1-xN multiple quantum wells grown by molecular beam epitaxy
• Polarity determination of GaN films by ion channeling and convergent beam electron diffraction
• Strain effects on valence band structure in wurtzite GaN quantum wells
• Monitoring surface stoichiometry with the (2x 2) reconstruction during growth of hexagonal-phase GaN by molecular beam epitaxy
• Lattice-matching SiC substrates with GaN.
• Deep-level defects and n-type-carrier concentration in nitrogen implanted GaN
• Electron beam induced current measurements of minority carrier diffusion length in gallium nitride
• High field flashover strength of intrinsic gallium nitride and aluminum nitride in vacuum.
• Direct imaging of impurity-induced Raman scattering in GaN
• Near ultraviolet luminescence of Be doped GaN grown by reactive molecular beam epitaxy using ammonia
• High p-type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant
• Solid phase immiscibility in GaInN
• Properties of GaN grown at high rates on sapphire and on 6H- SiC
• Valence band splittings and band offsets of AlN, GaN, and InN
• Optical characteristics of p-type GaN films grown by plasma-assisted molecular beam epitaxy
• Nonalloyed Ti/Al Ohmic contacts to n-type GaN using high-temperature premetallization anneal
• The effect of atomic hydrogen on the growth of gallium nitride by molecular beam epitaxy
• Time-resolved photoluminescence studies of InGaN epilayers
• Surface lifetimes of Ga and growth behavior on GaN(0001)surfaces during molecular beam epitaxy
• Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233 K,
• Coexistence of wurtzite GaN with zinc blende and rocksalt studied by x-ray power diffraction and high-resolution transmission electron microscopy
• Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers
• Gain spectra and stimulated emission in epitaxial (In,Al) GaN thin films
• Photoluminescence related to the two-dimensinal electron gas at a GaN/AlGaN heterointerface
• A near-field scanning optical microscopy study of the photoluminescence from GaN films
• High quality GaN-InGaN heterostructures grown on (111) silicon substrates
• InGaN-GaN based light-emitting diodes over (111) spinel substrates
• Local vibrational modes of the Mg-H acceptor complex in GaN
• High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors
• Hardness and fracture toughness of bulk single crystal gallium nitride
• Room Temperature CW Operation of InGaN MQW Structure Laser Diodes
• Self-assembling GaN quantum dots on Al_xGa_1-xN surfaces using a surfactant
• Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
• Recombination dynamics in InGaN quantum wells
• Gallium vacancies and the yellow luminescence in GaN
• Sputtered AlN encapsulant for high-temperature annealing of GaN
• High temperature adduct formation of trimethylgallium and ammonia
• Mg-doped p-type GaN grown by reactive molecular beam epitaxy
• Photoluminescence study of high quality InGaN/GaN single heterojunctions
• Lattice parameters of gallium nitride
• Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates
• Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques
• Exciton region reflectance of homoepitaxial GaN layers
• High transconductance heterostructure field-effect transistors based on AlGaN/GaN
• Optical degradation of InGaN/AlGaN light-emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition
• Optical transitions in cubic GaN investigated by spatially resolved cathodoluminescence
• AlGaN/InGaN/GaN blue light emitting diode degradation under pulsed current stress
• Gain analysis for surface emission by optical pumping of wurtzite GaN
• Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H(en-dash) SiC and sapphire substrates
• Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire
• Characteristics of light-emitting diodes based on GaN p-n junctions grown by plasma assisted molecular beam epitaxy

1997

• High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) structures
• Arsenic mediated reconstructions on cubic (001) GaN
• Ohmic contacts to n-GaN using PtIn2
• Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
• Elastic moduli of gallium nitride
• Thermally stable PtSi Schottky contact on n-GaN
• Domain boundaries in eptiaxial wurtzite GaN
• Comparison of degradation caused by dislocation motion in compound semiconductor light-emitting devices
• The near band edge photoluminescence of cubic GaN epilayers
• Photoluminescence microscopy of InGaN quantum wells
• Alternative microstructure of GaN nucleation layers grown by low pressure metal-organic vapor phase epitaxy on sapphire substrate
• Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser dides with lifetimes of 27 hours
• Mg-doped green light emitting diodes over cubic (111) MgAl2O3 substrates
• Bowing parameter of the band-gap energy of GaNxAs1-x
• Excitation of a higher order transverse mode in an optically pumped In0.15Ga0.85N/In0.05Ga0.95N multiquantum well laser structure
• Low pressure synthesis of bulk, polycrystalline gallium nitride
• Optical linewidths of InGaN light emitting diodes and epilayers
• Deep levels and persistent photoconductivity in GaN thin films
• Optical properties of tensile-strained wurtzite GaN epitaxial layers
• Schottky barrier detectors on GaN for visible-blind UV detection
• Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy
• Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy
• Study of open-core dislocations in Gan films on (0001) sapphire
• Temperaure dependence of energy gap in GaN thin film studied by thermomodulation
• Small valence-band offsets at GaN/InGaN heterojunctions
• Gain spectroscopy on InGaN/GaN quantum well diodes
• InN-based Ohmic contacts to InAlN
• White light from InGaN/conjugated polymer hybrid light-emitting diodes
• Thermally oxidized AlN thin films for device insulators
• Anisotropy of the nitrogen conduction states in the group III nitrdes studied by polarized x-ray absorption
• Metalorganic vapor-phase epitaxy of cubic Al(x)Ga(1-x)N alloy on a GaAs (100) substrate
• Electrical and structural analysis of high-dose Si implantation in GaN
• High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III-V nitrides
• Subband emissions from InGaN multi-quantum-well laser diodes under room-temperature continous wave operation
• Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures
• Luminescence from localized states in InGaN epilayers
• Thermodynamic considerations in epitaxial growth of GaAs(1-x)N(x) solid solutions
• Comparison of high field electron transport in GaN and GaAs
• Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine
• exciton-phonon interection in InGaN/GaN and GaN/AlGaN multiple quantum wells
• Excitonic luminescence and absorption in dilute undoped GaN_xAs_1-x alloy (x<0. 3%)
• Theoretical evidence for efficient p-type doping of GaN using Be
• Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells
• Synthesis of gallium nitride quantum dots through reactive laser ablation
• Dispersion properties of aluminum nitride as measured by an optical waveguide technique
• Optical Properties of Wurtzite Structure GaN on Sapphire around Fundamental Absorption Edge (0. 78 - 4. 77 eV) by Spectroscopic Ellipsometry and the Optical Transmission Method
• Growth of single phase GaAs_1-xN_x with high nitrogen concentration by MOMBE
• Ballistic electron emission microscopy study of transport in GaN thin films
• Degenerate Layer at GaN/sapphire interface: Influence on Hall-effect measurements
• Characterization of InGaN MQW structures for blue semiconductor laser diodes
• Urbach-Martienssen tails in a wurtzite GaN epilayer
• Influence of growth conditions on electrical characteristics of AlN on SiC
• Band gaps of GaPN and GaAsN alloys
• Carbon-hydrogen complexes in vapor phase epitaxial GaN
• Resonant Raman scattering in GaN/(AlGa)N single quantum wells
• Correlation of cathodoluninescence inhomogeneity with microstructural defects in eptaxial GaN grown by metalorganic chemical-vapor deposition
• Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition
• Effect of hydrogen on the indium incorporation in InGaN epitaxial films
• Ultra-low resistive ohmic contacts on n-GaN using Si-implantation
• Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy
• Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN
• Direct observation of the inital nucleation and epitaxial growth of metastable cubic GaN on (001) GaAs
• Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes
• Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN
• Epitaxial relationships between GaN and Al2O3 (0001) substrates
• Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
• Comment on ‘Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions’ [Appl. Phys. Lett. 69, 1276 (1996)]
• Response to ‘Comment on ‘Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions’’ [
• AlGaN (0<x<1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition
• Role of self-formed InGaN quantum dots for exiton localization in the purple laser diode emitting at 420 nm
• Surface emission of InGaN epilayers under strong optical excitation
• Optical gain for wurtzite GaN with anisotropic strain in C plane
• Epitaxy of Al films on GaN studied by reflection high-energy electron diffraction and atomic force microscopy
• Calculation of unstable mixing region in wurtzite In_1‐x‐yGa_xAl_yN
• Persistent photoconductivity in n-type GaN
• Persistent photoconductivity in n-type GaN
• Anisotropic epitaxial lateral growth in GaN selective area epitaxy
• Evolution of stress relaxation and yellow luminescence in GaN/sapphire by Si incorporation
• Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells
• The process and efficiency of ultraviolet generation from gallium nitride blue light emitting diodes
• Determination of the Al mole fraction and band gap bowing of epitaxial AlGaN films
• Mg in GaN: Incorporation of a volatile species at high temperatures during molecular beam epitaxy
• Optical property of a novel (111)-oriented quantum structure
• Temperature-Dependent Absorption Measurements of Excitons in GaN Epilayers
• Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy
• Raman analysis of the longitudinal disorder in Al_xGa_1-xN films
• High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) structures
• Defect structure in selectively grown GaN films with low threading dislocation density
• Structure of GaN films grown by hydride vapor phase epitaxy
• Observation of multiple Er3 + sites in Er-implanted GaN by site-selective photoluminescence
• Low Noise p-p-n GaN Ultraviolet Photodetectors
• Spatially resolved cathodoluminescence spectra of InGaN quantum wells
• Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
• Vertical strain and doping gradients in thick GaN layers
• GaN exciton photovoltaic spectra at room temperature
• Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
• Polarity of (00·1) GaN epilayers grown on a (00·1) sapphire
• Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
• Microstructure of GaN layers grown on (001) GaAs by plasma assisted molecular-beam epitaxy
• Nucleation and growth of chemical beam epitaxy gallium nitride thin films
• Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO
• Polarization field effects on the electron-hole recombination dynamics in In[sub02]Ga[sub0. 8]N/In[sub1-X]Ga[subX]N multiple quantum wells
• Comparison of trimethylgallium and triethylgallium for the growth of GaN
• Preconditioning of c-plane sapphire for GaN epitaxy by radio frequency plasma nitridation
• Lateral Electron Current Operation of Vertical Cavity Surface Emitting Lasers with Buried Tunnel Contact Hole Sources
• The influence of inversion domains on surface morphology in GaN grown by molecular beam epitaxy
• GaN growth on Si (111) substrate using oxidized AlAs as an intermediate layer
• Atomic-scale nature of the (3x3)-ordered GaAs(001):N surface prepared by plasma-assisted molecular-beam epitaxy
• High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
• Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors
• AlGaN nanoparticle/polymer composite:synthesis, optical and structral characterization
• Effects of buffer layer on formation of domain boundaries in epilayer during film growth of GaN by low-pressure metal-organic vapor phase
• The piezoresistive effect in GaN-AlN-GaN structures
• Time-resolved photoluminescence studies of InGaN/GaN single- quantum-wells at room temperature
• Optimized growth conditions for the epitaxial nucleation of β-GaN on GaAs(001) by molecular beam epitaxy
• "Blue" temperature induced shift and band-tail emission in InGaN-based light sources
• Room temperature intrinsic optical transition in GaN epilayers: the band-to-band versus excitonic transitions
• Study of surface-emitted stimulated emission in GaN
• Determination of the band-gap energy of AlInN grown by metal-organic chemical-vapor deposition
• Carrier capture in pseudomorphically strained wurtzite GaN quantum-well lasers
• Strain determination in heteroepitaxial GaN
• Optical properties of Si-doped GaN

1998

• X-ray characterization of GaN/AlGaN multiple quantum wells for ultraviolet laser diodes
• Nature of the 2.8 eV photoluminescence band in Mg doped GaN
• Lasing Mechanism of InGaN/GaN/AlGaN multiquantum well laser diode
• Origin of Conductivity and Low-Frequency Noise in Reverse-Biased GaN p-n Junctions
• Electrical characterization of GaN/SiC n-p heterojunction diodes
• Optical properties of low band gap GaAs_(1-x)N_x layers: Infleunce of post-growth treatments
• Luminescence of as-grown and thermally annealed GaAsN/GaAs
• The incorporation of arsenic in GaN by metalorganic chemical vapor deposition
• Metalorganic molecular beam epitaxy of GaAsN with dimethylhydrazine
• Electronic properties of arsenic-doped gallium nitride
• Calculated natural band offsets of all II-VI and III-V semiconductors: chemical trends and the role of cation d orbitals
• Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
• InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
• Determination of wurtzite GaN lattice polarity based on surface reconstruction
• Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition
• Sound velocity of Al_xGaN_1-xN thin films obtained by surface acoustic-wave measurements
• GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy
• Temperature dependence of impact ionization in AlGaN-GaN Heterostructure Field Effect Transistors
• temperature dependence of impact ionization in AlGaN-GaN HEMTs
• Ultraviolet and violet GaN light emitting diodes on silicon
• Near-field optical study of InGaN/GaN epitaxial layers and quantum wells
• Coupling of GaN- and AlN-like longitudinal optic phonons in Ga1-xAlxN solid solutions
• Large band gap bowing of In_xGa_1-xN alloys
• Electrical characteristics of magnesium-doped nitride junction diodes
• Optical characterization of lateral epitaxial overgrown GaN layers
• Low Frequency Noise in GaN/GaAlN Heterojunctions
• Luminescence spectra from InGaN multiquantum wells heavily doped with Si,
• The formation of GaN dots on Al _xGa_1-xN surfaces using Si in gas-source molecular beam epitaxy
• Efficiency of NH₃ as nitrogen source for GaN molecular beam epitaxy
• Defect-induced Raman scattering in resonance with yellow luminescence transitions in hexagonal GaN on a sapphire substrate
• Phase separation in InGaN grown by metalorganic chemical vapor deposition
• Ultraviolet and violet GaN light emitting diodes on silicon
• Electron-irradiation-induced deep level in n-type GaN
• Doping of AlGaN
• Visible-Blind GaN Schottky Barrier Detectors Grown on Si(111)
• The influence of the deformation on the two-dimensional electron gas density in the GaN-AlGaN heterostructures
• Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
• Excitation density dependence of photoluminescence in GaN:Mg
• Electron Transport in AlGaN-GaN Heterostructures Grown on 6H-SiC Substrates
• Pit formation in GaInN quantum wells
• Schottky barrier photodetectors based on AlGaN
• Ultraviolet GaN light-emitting diodes grown by molecular beam epitaxy using NH3
• Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy
• Near-field scanning optical spectroscopy of an InGaN quantum well
• Optical Characterization of GaN/SiC n-p heterojunction and p-SiC
• Efficient all-optical light modulation in a piezoelectric heterostructure at room temperature
• AlGaN/GaN High Electron Mobility Field Effect Transistors with Low 1/f Noise
• Back-illuminated GaN/AlGaN heterojunction photodiodes with high quantum efficiency and low noise
• Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells
• GaN epitaxial lateral overgrowth and optical characterization
• Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy
• Thermally stable rhenium Schottky contacts to n-GaN
• GaN/Al_xGa_1-xN quantum wells grown by molecular beam epitaxy with thickness control at the monolayer scale
• Raman studies of nitrogen incorporation in GaAs_1-xN_x.
• The infrared optical functions of Al_xGa_1-xN determined from infrared reflectivity and Hall effect
• Multicolored light emitters on silicon substrates
• Determination of piezoelectric fields in GaInN strained quantum wells using the quantum-confined Stark effect
• Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy
• Spectroscopic ellipsometry characterization of (InGa)N on GaN
• Collective effects of interface roughness and alloy disorder in In_xGa_1-xN/GaN multiple quantum wells
• Structural and optical properties of pseudomorphic In_xGa_1-xN alloys
• Investigation of optically active E₁ transverse optical phonon modes in Al_xGa_1-xN layers deposited on 6H-SiC substrates using infrared reflectance
• Two-dimensional electron-gas density in Al_xGa_1–xN/GaN heterostructure field-effect transistors
• Optical band gap in GaInN (0 < x < 0.2) on GaN by photoreflection spectroscopy
• Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,
• Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates
• The origin of persistent photoconduc tivity and its relationship with yellow liminescence in molecular beam epitaxy grown undoped GaN
• Green electroluminescence from Er-doped GaN Schottky barrier diodes
• Optical properties of GaN-rich side of GaNP and GaNAs alloys grown by gas-source molecular beam epitaxy
• InGaN/GaN quantum well studied by high pressure, variable temperature, and excitation power spectroscopy
• Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment
• Incorporation of indium during molecular beam epitaxy of InGaN
• Effects of piezoelectric field on defect formation, charge transfer, and electron transport at GaN/Al_xGa_1–xN interfaces
• Ohmic Contacts Formed by Electrodeposition and Physical Vapor Deposition on p-GaN
• Piezoelectric Doping and Elastic Strain Relaxation in AlGaN/GaN Heterostructure Field Effect Transistors
• Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells
• Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence
• Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth
• Adatom Diffusion at GaN (0001) and (000-1)
• Effects of Si-Doping in the Barriers of InGaN Multiquantum Well Purplish-Blue Laser Diodes
• Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition
• Gallium Nitride whiskers formed by selective photoenhanced wet etching of dislocations
• The role of dislocation scattering in n-type GaN films
• GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy
• InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates,
• Electrical characterization of GaN p-n junctions with and without threading dislocations

1999

• Valence-band structure of wurtzite GaN including the spin-orbit interaction
• Visible cathodoluminescence of GaN doped with Dy, Er, and Tm
• Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution X-ray diffraction mapping measurements
• high voltage (450 kV) GaN Schottky rectifiers
• Low-resistance ohmic contacts to p-type GaN
• Growth and characterization of small band gap (~0. 6 eV) InGaAsN layers on InP
• Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on Si
• GaN evaporation in molecular-beam epitaxy environment
• Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures
• Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates
• Ohmic contact formation mechanism of nonalloyed Pd contacts to p-type GaN observed by positron annihilation spectroscopy
• Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells
• Lattice location of Ca in GaN using ion channeling
• Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy
• Room-temperature visible and infrared photoluminescence from Pr-implanted GaN films by focused-ion-beam direct write
• Growth of high mobility GaN by ammonia-molecular beam epitaxy
• Theoretical transport studies of p-type GaN/AlGaN modulation-doped heterostructures
• Two-step preparation of 6H–SiC(0001) surface for epitaxial growth of GaN thin film
• Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the "advancing" Al/Ti metallization
• Photoluminescence from laser assisted debonded epitaxial GaN and ZnO films
• Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor
• Deep levels in p-type InGaAsN lattice matched to GaAs
• Visible cathodoluminescence of Er-doped amorphous AlN thin films
• Lateral epitaxial overgrowth of GaN films on sapphire and silicon substrates
• InGaAsN solar cells with 1. 0 eV band gap, lattice matched to GaAs
• Influence of 6H–SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers
• Homoepitaxial Growth of GaN by Metalorganic Vapor Phase Epitaxy: A Benchmark for GaN Technology,
• Red light emission by photoluminescence and electroluminescence from Eu-doped GaN
• Annealing behavior of p-type Ga_{0. 892}In_{0. 108}N_xAs_1-x (0≤ x≤0. 024) grown by gas-source molecular beam epitaxy
• Excitons bound to nitrogen clusters in GaAsN
• Pendeo-Epitaxy of Gallium Nitride Thin Films,
• Dislocation Reduction in GaN Thin Films Via Lateral Overgrowth from Trenches,
• Blue emission from Tm-doped GaN electroluminescent devices
• Quantum-well width dependence of threshold current density in InGaN lasers,
• Erratum: "GaN evaporation in molecular beam epitaxy environment"
• Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures
• Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy
• Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
• Optical transitions in Pr-implanted GaN
• Inversion of wurtzite GaN(0001) by exposure to magnesium

2000

• Arsenic impurities in GaN
• Electronic states and band alignment in GaInNAs/GaAs quantum well structures with low nitrogen composition
• Temperature dependence of band gap energies of GaAsN alloys
• Low-voltage GaN:Er green electroluminescent devices
• Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu
• Enhanced quality of epitaxial AlN thin films on 6H-SiC by ultra-high vacuum ion-assisted reactive dc magnetron sputter deposition
• Time-resolved photoluminescence studies of In_xGa_1-xAs_1-yN_y
• Evidence of strong carrier localization below 100K in GaInNAs/GaAs single quantum well
• Evidence of an oxygen recombination center in p⁺-n GaInNAs solar cells
• Large, nitrogen-induced increase of the electron effective mass in In_yGa_1-yN_xAs_1-x
• Selective enhancement of 1540 nm Er3+ emission centers in Er-implanted GaN by Mg
• Interband luminescence and absorption of GaNAs/GaAs single quantum well structures
• Local structure and bonding of Er in GaN: A contrast with Er in Si
• Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg
• AlGaN–GaN–AlInGaN induced base transistor
• Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering
• From N isoelectronic impurities to N-induced bands in the undoped GaN_xAs_1-x alloy
• In-situ, Real-Time Measurement of Wing Tilt During Lateral Epitaxial Overgrowth of GaN,
• Solar-Blind AlGaN Photodiodes with Very Low Cutoff Wavelength
• Self-Organized Propagation of Dislocations in GaN Films During Epitaxial Lateral Overgrowth,
• Characterization of InGaN thin films using high-resolution x-ray diffraction
• Time-resolved study of yellow and blue luminescence in Si- and Mg-doped GaN
• Photoluminescence and cathodoluminescence of GaN doped with Tb
• Epitaxial growth of AlN and Al_{0. 5}Ga_{0. 5}N layers on aluminum nitride substrates
• Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy
• AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
• Nitrogen dependence of the GaAsN interband critical points E₁ and E₁+Δ₁ determined by spectroscopic ellipsometry
• Direct determination of electron effective mass in GaNAs/GaAs quantum wells
• Phonon Lifetimes in BulkAlN and Their Temperature Dependence
• Mechanism for rapid thermal annealing improvements in undoped GaN_xAs_1-x/GaAs structures grown by molecular beam epitaxy
• Enhancement of cathodoluminescent and photoluminescent properties of Eu:Y2O3 luminescent films by vacuum cooling
• Identification of the Γ₅ and Γ₆ free excitons in GaN
• Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy
• Solar-Blind AlGaN-Based Inverted Heterostructure Photodiodes
• Alternating current thin-film electroluminescence of GaN:Er
• Control of polarity of ZnO films grown by plasma-assited molecular beam epitaxy: Zn- and O-polar ZnO films on Ga-polar GaN templates
• Visible emission from electroluminescent devices using an amorphous AlN:Er3 + thin-film phosphor
• Dependence of Crystallographic Tilt and Defect Distribution on Mask Material in Epitaxial Lateral Overgrown GaN Layers,
• Luminescence properties of GaN and Al0.14Ga0.86N/GaN superlattice doped with europium
• Origin of hexagonal-shaped etch pits formed in (0001) GaN films
• Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells
• Emission properties of an amorphous AlN:Cr3 + thin-film phosphor

2001

• Optical properties of GaN grown by hydride vapor-phase epitaxy
• Band alignment at a ZnO/GaN (0001) heterointerface
• Catalytic role of Au in Ni/Au contact on GaN(0001)
• Role of Ga-flux in dislocation reduction in GaN films grown on SiC(0001)

97

• Femtosecond studies of carriers dynamics in InGaN.

Applied Surface Science

1985

• Morphology and structure of indium nitride films

1989

• Electrical properties and structures of the MOCVD-AlN/GaAs interface

1996

• Chemical trends of barrier heights in metal-semiconductor contacts:on the theory of the slope parameter

2000

• Control and characterization of ZnO/GaN heterointerfaces in plasam-assisted MBE-grown ZnO films on GaN/Al2O3

2001

• Photo-, cathodo-, and electroluminescence studies of sputter deposited AlN:Er thin films

Bulletin of the American Physical Society

1962

• Injection luminescence from GaAs

1979

• EH Recombination and stimulated emission in GaN

Bulletin of the Chemical Society of Japan

1965

• Vibrational assignments and intramolecular force field of trimethylaluminum

1978

• Vibrational spectra and normal coordinate calculations for trimethylaluminum-ammonia

Bulletin of the Korean Chemical Society

1994

• Single Phase Gallium Nitride on Sapphire with Buffering AlN Layer by Laser Induced CVD

Book

1939

• The Nature of the Chemical Bond

1966

• Handbook of Thermionic Properties

1969

• Asymptotic methods of nonlinear mechanics

1970

• Methods of Applied Calculations in Thermodynamic of Chemical Reactions
• Thermodynamic functions of trimethylaluminium

1971

• Thermochemical Constants of Substances, Vol. 5
• Optical Processes in Semiconductors
• JANAF thermochemical tables

1972

• Symmetry and Strain-induced Effects in Semiconductors

1973

• Thermochemical Properties of Inorganic Substances
• Bonds and Bands in Semiconductors

1974

• Symmetry and strain-induced effects in Semiconductors

1975

• Excitons at High Density

1976

• Statistical Physics

1977

• Semiconductor Lasers and Heterojunction LEDs

1979

• Molecular Constants of Inorganic Substances

1980

• Electronic Structure and the Properties of Solids

1981

• Physics of Semiconductor Devices

1984

• Chemistry of the elements

1985

• Pearsons Handbook of Crystallographic Data for Intermettalic Phases
• The stopping and ranges of ions in solids, Vol. 1

1987

• Physico-chemical properties of molecular inorganic substances
• Phase Diagrams of Binary Titanium Allloys
• The properties of gases and liquids

1988

• Cohesion in Metals
• Metal-Semiconductor Contacts

1989

• Thermodynamic properties of individual substances, Fourth edition
• Electronic Properties of GaAs Materials and Devices
• Organometallic Vapor-Phase Epitaxy:Theory and Practice

1990

• Cathodoluminescence microscopy of inorganic solids

1991

• Handbook of Optical Constants of Solids II
• Thermodynamic properties of individual substances. Fourth edition, Vol.2
• Quantum Semiconductor Structures: Fundamentals and Applications

1993

• Materials Thermochemistry
• Materials Fundamentals of Molecular Beam Epitaxy

1994

• Properties of Group III Nitrides
• Thermodynamic properties of individual substances. Fourth edition, Vol.3

1995

• Purity Control of Semiconductors by the Method of Capacitance Transient Spectroscopy
• Physics of Optoelectronic Devices

1996

• Electron energy-loss spectroscopy in the electron microscope
• Gallium Nitride and Related Materials
• Fundamentals of Semiconductors

1997

• The Blue Laser Diode - GaN based Light Emitters and Lasers
• Gallium Nitride I
• GaN and Related Materials
• III-V Nitrides

1998

• Nitride Semiconductors

1999

• Properties, processing and applications of GaN and related semiconductors

2000

• GaN and Related Materials II

Articles in Edited Books

1957

• Carrier Generation and Recombination in p-n Junction and p-n Junction Characteristics

1964

• Exciton structure and Zeeman effects in zinc sulfide

1975

• matthews-bookarticle-1975-566
• Coherent interfaces and misfit dislocations

1977

• Far-infrared photoconductivity in high purity GaAs

1982

• Exciton Polariton Structure

1989

• No Title Available

1986

1995

• Theoretical prediction of liquid droplets formation during vapor phase epitaxy of nitrides

1994

• High-Temperature GaN/SiC Heterojunction Bipolar Transistor with High Gain

1996

• Optical properties of GaN and related materials

1995

• Electronic Properties of InAs/Antimonide-Based short period tunneling structures
• Microstructure of GaN epitaxially grown on hydrogen plasma cleaned 6H-SiC substrates
• TEM characterisation of GaN layers grown by MOCVD on Al2O3(0001)
• Ohmic Contacts to 6H-SiC based on TiC and Ni

1996

• First Successful III-V Nitride Based Laser Diodes

1995

• Wide Band Gap Electronic Devices
• AES-SIMS Analitical System for Composition Measurements of Wide Band Gap Semiconductors.

1994

• Impurities and Dopants in Group III Nitrides

1995

• Current Flow Mechanisms in GaN and AlGaN p-i-n Structures
• DC, microwave, and high-temperature characteristics of GaN FET structures
• The Growth of Doped Epitaxial GaN Films on Sapphire Substrates in a Production Scale Multi-Wafer Rotating Disc MOCVD System

1996

• Exciton Dynamics in Mg Doped GaN Grown by MOCVD on GaN Substrate
• Donor-Acceptor Pair Spectra in p-type Homoepitaxial GaN Layers
• Growth of thick GaN Films by Halide Vapor Phase Epitaxy

1994

• Interlayer-Induced Dipoles In Schottky-Contacts
• Barrier Heights of 3C- and 6H-SiC Schottky Contacts: Explanation by the MIGS-and-Electronegativity Model

1996

• Optical properties of highly excited GaN

1995

• Thin Film Deposition and Dopant Incorporation by Energetic Particle Sources
• Reactive Ion Etching of Silicon Carbide with Fluorine-Containing Plasmas

1994

• Electrical characterization of blue AlGaN/ InGaN/GaN LEDs

1995

• Impurity-related photoluminescence from InGaN LED material
• Time-resolved photoluminescence in AlGaN/InGaN/GaN blue light emitting diodes
• Degradation of blue AlGaN/InGaN/GaN LEDs subjected to high current pulses

1990

• Vapor Pressure Constants of Elements

1997

• GaN based LEDs by MOVPE and MBE
• Modeling of MOVPE of Group III-Nitrides in horizontal tube reactor
• Device Performance of Ultra-Violet Emitting Diodes Grown by MBE
• Blue Light-Emitting Diodes on GaN Substrates, Growth and Characterization

1998

• MOVPE growth of nitrides
• Optical properties and lasing in GaN
• Defect spectroscopy in the nitrides

1994

• Basic optical properties, photoluminescence and cathodoluminescence of GaN and AlGaN

1997

• Characterization of Midgap States in HVPE and MOVPE-Grown n-type GaN

1998

• Large-angle gradual tilting of crystallographic orientations of HVPE-GaN selectively grown on MOVPE-GaN

1999

• Structural, mechanical and thermal properties of group III nitrides
• AlN: Electrical, electronic and optical properties
• GaN: Electrical, electronic and optical properties
• InN: Electrical, electronic and optical properties
• Properties, processing and applications of GaN and related semiconductors

1995

• Optical Characterization of Compound Semiconductors

1999

• GaN-based lasers and other devices
• GaN-based light emitting diodes
• Bulk crystal growth of GaN and related compounds
• Epitaxial growth of GaN and related compounds
• Optical Properties of GaInN/GaN Heterostructures and Quantum Wells

2000

• Renaissance and Progress in Nitride Semiconductors
• HVPE/MOMBE Hybrid Growth of High Quality Hexagonal GaN on SiO2 Substrates with an AlN Buffer Layer
• Polarity of GaN Grown on (001) ß-LiGaO2
• Synthesis and Properties of HVPE Nitride Substrates
• HVPE Regrowth on Free-Standing GaN Quasi-Substrates
• Epitaxial Lateral Overgrowth of GaN on Si Substrates by Hydride Vapor Phase Epitaxy
• Time-Modulated Growth of Thick GaN by Hydride Vapor Phase Epitaxy : Suppression of Dislocations
• The Catalytic Growth of GaN Powders
• Structural and Optical Characterization of Thick GaN Films Grown by Direct Reaction of Ga and NH3
• Thermodynamic Analysis and In Situ Gravimetric Monitoring of GaN Decomposition
• Influence of Growth Temperature on the Crystalline Quality of Hexagonal GaN Layer on GaAs (111)A by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy
• Effect of High Temperature GaN Buffer Layer on the Growth of Thick GaN by Hydride Vapor Phase Epitaxy
• Cathodoluminescence Characterization of Thick GaN Films Grown by HVPE
• The Lateral Growth of GaN by Sublimation Method
• Dynamics and Polarization of Group-III Nitrides
• Bowing of GaN Substrates by Hydride Vapor Phase Epitaxy
• MOCVD Growth of Cubic GaN: Materials and Devices
• Influence of Si Doping on Optical Properties of Cubic GaN Grown on GaAs (001) Substrates by Metalorganic Vapor Phase Epitaxy
• Cubic AlGaN/GaN and GaN/InGaN Heterostructures:Effects of p-type Doping
• Strain Relaxation Mechanisms in Hexagonal and Cubic Nitride Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
• Vapor Phase Epitaxy of Cubic Gallium Nitride Using a Single Source
• Effect of an Intermediate Layer on Cubic GaN Grown on GaAs (100): Substrate Protection and Strain Relaxation
• Detection and Analysis of Hexagonal Phase Generation in Selective-Area Growth of Cubic GaN by Metalorganic Vapor Phase Epitaxy
• Growth and Characterization of Cubic InGaN/GaN Multiple Quantum Wells on 3C-SiC by RF-MBE
• Regional Density Functional Theory for Parasitic Reaction in III-V Nitride Semiconductor Crystal Growth
• Complex Flow and Gas Phase Chemical Reactions in GaN MOVPE Reactor
• Large Lateral Growth Rate in GaN Grown Directly on Al2O3(0001) Substrate by Two-Flow Metalorganic Vapor Phase Epitaxy
• Optical Properties of GaN Epitaxial Layers Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy Under Various Growth Conditions
• Growth of AlGaN/GaN Heterostructure at Various NH3 Flows and Reactor Pressures and Their 2DEG Transport Properties
• MOVPE Growth of 4-inch GaN Epitaxial Wafers for FETs on a-face and c-face Sapphire Substrates
• MOVPE Growth and Optical Properties of GaN/AlGaN Superlattices as Pseudo-Ternary Alloys
• Effect of Strain Relaxation and Screening on Intersubband Transitions in GaN/AlGaN Multiple Quantum Wells
• Effect of Intermediated Layers in Al0.65Ga0.35N/GaN Multiple Quantum Wells
• A New Approach to Grow GaN by Low-Pressure MOCVD Using a Three Steps Tecnique
• Polarization Control in Nitride-Based Semiconductor
• Effect of Carrier Gas on the Properties of MOVPE-Grown GaN and GaN/AlGaN MQWs: a Comparison of H2 to N2 as a Carrier Gas
• The Influence of the Low-Temperature Buffer-Layer on Substrate-Induced Biaxial Stress in a GaN Film on a Sapphire Substrate
• Improved 250nm UV PL Spectra from BAlGaN/AlN MQW on 6H-SiC Substrate by MOVPE using TEB
• Coaxial Impact Collision Ion Scattering Spectroscopy (CAICISS) Analysis for the Polarity Conversion of GaN Films Grown on Nitrided Sapphire Substrates
• Reduction of Threading Dislocations in RF-MBE Grown Polarity Controlled GaN by AlN Multiple Interlayers
• Optimization of the Electron Mobilities in GaN Grown by Plasma-Assisted Molecular Beam Epitaxy
• Optical and Electrical Properties of GaN Films with Ga-Polarity Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
• Optical Emission from Surface and Buried AlGaN/GaN MQWs Grown by MBE on 6H-SiC
• Molecular Beam Epitaxy of GaN (0001) Under Hydrogen
• Resolved Band-Edge Luminescence of AlN on Different Substrates
• An Indium Surfactant Effect in Cubic GaN RF-MBE Growth
• Annealing Effect of Low Temperature Growth of InN Films by RF-MBE
• MBE growth of InN on Si toward Hole-Barrier Structure in Si Devices
• Crystal Growth of AlN on Al/Sapphire Interdegital Transducer at the Resonance Point of Nitrogen-Electron Cyclotron Plasma
• Structural Analysis of AlN films grown on SiC substrate by RF-MBE and RF-MEE
• Fabrication of Conductive AlN Films by Pulsed Laser Deposition
• Influence of the Ion Irradiation During Low-Energy Nitrogen Ion Assisted Deposition of Wurtzitic Gallium Nitride Films on Sapphire
• Gas-Source MBE Growth of GaN Films Using Tertiarybutylhydrazine as a Nitrogen Precursor
• The Effects of Atomic Hydrogen on the III-Nitride Growth Dynamics in RF-Molecular Beam Epitaxy
• Growth and Characterization of GaN Epilayer on Sapphire Substrate by Ammonia Gas Source Molecular Beam Epitaxy
• InGaN Film Growth on Polarity Controlled GaN Buffer Layer by Ammonia-MBE
• Morphology Dependent Growth Kinetics of Ga-polar GaN(0001)
• Comparison of Dislocation Properties in GaN Epilayer Grown by MOCVD with MBE
• Advances in III-Nitride Growth by Ammonia-MBE
• Flow Modulation Epitaxy of InN/GaN Heterostructures; Towards InN Based HEMTs
• Pulsed MOCVD Technique for Lateral Overgrowth of GaN on SiC with Conducting Buffer Layers
• Influence of Growth Interruptions and Gas Ambient on Optical and Structural Properties of InGaN/GaN Multilayer Structures
• Epitaxial Growth of AlN on Sapphire by ECR Plasma Assisted MOCVD under Mirror Field Conditions
• Observation of the Early Stages and 3D-2D Transition of MOCVD Grown GaN with LT-GaN Buffer Layer
• GaN Thin Films Grown on Hydrogen Plasma Cleaned Sapphire Substrates by Plasma Assisted MOCVD
• AlGaN Films and AlGaN/GaN Superlattices Prepared by Hot Wall Epitaxy
• GaN Epitaxial Growth Using RF Pulsed Laser Deposition (PLD) Method with Molten Ga Target
• GaN Thin Film Grown by Reactive Close-Spaced Method at 750^oC
• Pendeo-Epitaxial Growth and Characterization of Gallium Nitride and Related Materials
• Crystallographic Structure of FIELO-GaN Films Studied by Scanning Reflection Electron Microscopy
• Measurement and Minimization of Wing Tilt in Laterally Overgrown GaN on a SiO2 Mask
• Cathodoluminescence Microscopy and Micro-Raman Spectroscopy of Growth Domains Formed During Epitaxial Lateral Overgrowth of GaN
• Crystallographic Tilt in Lateral Overgrowth of GaN Epitaxial Layers -Mask Material Dependence-
• Epitaxial Lateral Overgrowth of GaN using Tungsten Nitride (WNx) Mask via MOVPE and Electrical Properties of WNx/GaN Contacts
• Heteroepitaxy and Characterization of GaN with Low Dislocation Density on Periodically Grooved Sapphire Substrate
• Control of Self-Limited (0001) Facet in Selectively Grown GaN Hexagonal Structures with Dot Patterned Mask
• Transmission Electron Microscopy Study of Selective Area Growth of GaN on (111)Si using AlGaN as an Intermediate Layer
• Selective Growth of GaN Microstructures on (111)Facets of a (001)Si Substrate by MOVPE
• Photoluminescence Spectra and Impurity Incorporation in an SAG-ELO GaN by MOVPE
• Growth and Characterization of High Quality GaN Film by Expitaxial Lateral Overgrowth
• Morphological Evolution During Growth of InGaN Laser Diodes on Laterally Overgrown GaN on Sapphire
• High-Quality Laterally Overgrown GaN Layers without Crystallographic Tilting and Voids
• Reduction of Dislocation Density in GaN by Facet Controlled ELO
• Dynamical Process of Mass Transport in GaN
• A Cause of the Crystalline Orientation in Hexagonal GaN Grown on AlAs/GaAs (001)
• Growth Evolution of GaN on GaP (001) Substrate by Metalorganic Vapor Phase Epitaxy
• Growth Rate and Its Limiting Process for Metalorganic Vapor Phase Epitaxial InN
• Significance of the Suppression of Substrate Surface Nitridation for Epitaxial Growth of Wurtzite InN on GaP(111) and InP(111) Substrates
• Marked Substrate-Surface Dependence of In Content Included in High-Temperature Grown InN
• Influences of Inert Nitrogen Molecules, Nitrogen Radical Atoms and Nitrogen Molecular Ions on Growth Process and Crystal Structure of GaN Heteroepitaxial Layers Grown on Si(001) and Si(111) Substrates by Moleclular-Beam Epitaxy Assisted by Electron Cyclotron Resonance
• Heteroepitaxial Growth of GaN on Si Substrate Coated with a Thin Flat SiC Buffer layer
• Epitaxial Growth of AlN on Si(111) by Laser MBE
• The Effects of the Growth Rate along with AlN Nucleation Layer on the Qualities of GaN Epilayers Grown on Si(111) Substrate Using 3C-SiC Intermediate Layer
• Epitaxial Growth of Galium Nitride on (111)GaAs Substrates
• Electrical and Optical Properties of GaN Grown by Radical Beam Epitaxy on the (110) GaAs Surface
• Structural Properties, In Distribution, and Photoluminescence of Multiple InGaN/GaN Quantum Well Structures
• Characteristics of Optical Properties of the Interrupt Growth Method on InGaN/GaN MQW Structures
• Comparison of the Optical Properties in InGaN/GaN Quantum Well Structures Grown on (0001) and (1120) Sapphire Substrates
• Evidence of Localized States in InGaN/GaN Double Heterostructures
• Indium Aggregation and Phase Seperation in InGaN/GaN Quantum Wells Studied with High Resolution Transmission Electron Microscopy
• The Effects of Thermal Annealing Treatments on InGaN/GaN Quantum Well Structures
• GaN and InGaN Quantum Dots Grown by MBE: from UV to Red Light Emission
• Growth and Physics of Nitride-Based Quantum Dots for Optelectronics Applications
• Optical Properties of Self-Organized GaN Nanostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
• Growth of Self-Organized GaN Nanostructures on Al2O3 (0001) by RF MBE
• High-Density InGaN Quantum Dots Fabricated by Selective MOCVD Growth
• Theory of Strain, Built-in Electric Fields and Carrier States in Self-Organised GaN/AlN Quantum Dots
• Role of In on the Formation of Wire Structures on GaNAs Surfaces Grown by MOMBE
• Nitride-Rich GaN1-xPx Growth by Photo-Assisted Metalorganic Chemical Vapor Deposition and Its Properties for a Light-Emitting Diode
• CBE Growth and Characterization of InGaAsN/InP Quantum Well Structures using NH3
• Mechanism for Photoluminescence in InAsN/InGaAs Single Quantum Well
• Electronic Structures of GaNP and InNAs Ordered alloys Calculated by the Pseudopotential Method
• Envelope Function Calculations in GaAsN-GaN Quantum wells
• Beryllium-Implanted Gallium Nitride: Electrical and Structural Analysis
• Magnesium and Beryllium Doping During RF-Plasma MBE Growth of GaN
• Geometrical Magneto Resistance Measurement of Vertical Conductivity in GaN and Comparison With Lateral Transport
• Detection and Identification of Deep Levels in n-GaN
• Long-Term Photocapacitance Decay Behavior in Undoped GaN
• Correlation Between Deep Defects and Persistent Photoconductivity in Undoped GaN and AlGaN Layers
• TEM Study on Pit-Formation on the End of Threading Dislocations in MOVPE-GaInN/GaN
• Spatially Resolved Spectroscopy at Micro-Cracks in AlGaN Layers
• Cracking of GaN on Sapphire from Induced Non-Uniformity in Residual Stress
• Resonant Photoemission Study of Eu Doped GaN
• Photoluminescence Properties of Eu-Doped GaN by Ion Implantation
• Concentration Quenching of Eu Related Luminescence from Eu-doped GaN Studied by EXAFS Analysis
• Growth and Characterization of Tb Doped GaN
• Luminescence Properties of Er implanted n-GaN
• Direct Observation of Defect Structures in Ga-Polar and N-Polar GaN Epilayers by Cross-Sectional Cathodoliminescence
• Blue Photoluminescence Activated by Surface States in GaN
• Excitation Spectroscopy and Level Assignment in Piezoelectric Ga1-xInxN/GaN Quantum Wells
• Free Carrier Screening of Quantum-Confined Stark Effect Affecting on Luminescence Energy Shift and Carrier Lifetime in InGaN Quantum Wells
• Influence of Internal Electric Fields on the Carrier Dynamics in GaN/(Al,Ga)N Multiple Quantum Wells with Different Orientation and Strain State
• The Investigation on the Emission Mechanism of InGaN/GaN Quantum Well Structure
• Spectroscopic Studies in InGaN Single-Quantum-Well Amber Light-Emitting Diodes
• Temperature Dependent Carrier Dynamics in GaInN/GaN Multiple Quantum Wells with Varying In Composition
• Non-Radiative Nature of Threading Dislocations in GaN Grown by Metal-Organic Chemical Vapor Deposition
• Nonradiative Recombination Processes in GaN-Based Semiconductors Probed by the Transient Grating Method
• Distribution of Below-Gap States in GaN-based Quantum Wells Revealed by Two-Wavelength Excited Photoluminescence
• Photoreflectance Spectra of Excitonic Polaritons in Wurtzite GaN
• Motional Narrowing and Rayleigh Scattering of Exciton-Polaritons in GaN/AlGaN Multiple Quantum Wells
• Gas Source Molecular Beam Epitaxy Growth of Polycrystalline GaN on Metal Substrate and the Observation of Strong Photoluminescence Emision
• Structural and Optical Characteristics of GaInN Multiple Quantum Wells Grown by Raised-Pressure Metalorganic Chemical Vapor Deposition
• Optical Properties of AlInGaN Alloys and AlInGaN/InGaN Multiple Quantum Wells
• Optical Properties of (Al)GaN-Based Structures for Near- and Deep-Ultraviolet Emitters
• Excitons in GaN/GaAlN Quantum Wells: Optical Pumping and Temperature Effect
• Correlation between Optical Emission and Disordering of Indium in InxGa1-xN Single Quantum Wells Analyzed by Coaxial Impact Collision Ion Scattering Spectroscopy
• Magneto-Spectroscopy of Donor-Bound Excitons in Homoepitaxial GaN
• Ground and Excited Excitonic Resonances in Heteroepitaxial GaN Layers: A Magnetooptical Study
• High-Resolution Polariton Spectra of Homoepitaxial GaN: Temperature Dependence
• Near-Band-Edge Recombination in GaN, GaN:Mg and GaN:Si between 12 and 650 K
• Polarized Photoluminescence Spectroscopy of HVPE GaN with Different Dislocation Structures
• Recombination Dynamics in GaN and InGaN/GaN Multiple Quantum Wells on Air-Bridged Lateral Epitaxial Grown GaN Layers
• Photoluminescence from High-Quality InGaN Multiple Quantum Wells Grown by Metal Organic Chemical Vapor Deposition
• Photoluminescence Excitation Spectrum of Undoped and Zn Doped InGaN Microcrystals
• Effects in Carrier Dynamics of Isoelectronic In Doped in GaN Films Grown by Metaloganic Vapor Phase Epitaxy
• Mesoscopic Capacitor Effect in GaN/AlGaN Quantum Wells
• Optical Characterization for Indium Segregation Studies in InGaN/GaN Quantum Wells
• Time-Resolved Photoluminescence of InGaN/GaN MQW Structures
• Electrical Chracterization of Ion Implantation Induced Defect States in Gallium Nitride
• The Electronic Structure and Optical Properties of Phosphorus Implanted GaN Films
• Electrical and Optical Properties of Si- and Mg-Doped Polycrystalline GaN on Quartz Glass Substrate
• Indium Silicon Co-Doping in AlGaN/GaN Multiple Quantum Wells
• Effect of Impurity Doping on the Mechanical Properties of AlxGa1-xN Ternary Alloys
• GaN-Based Electroluminescence Device with AC Operation Using GaN Powder
• Reflection Spectra of Al1-xGaxN
• Temperature Dependence of Aluminum Nitride Reflectance Spectra
• Observation of Second Harmonic Emission and Three-Photon Fluorescence from Gallium-Nitride
• Raman Scattering in Hexagonal AlxGa1-xN Alloys and Optical Modes Behavior
• Overdamped Electron Plasma Oscillations in Cubic AlxGa1-xN Layers Observed by Raman Scattering Spectroscopy
• Raman Studies of Hexagonal GaN/AlxGa1-xN Multilayered Structures
• Strain Effects on Structural, Dielectric, and Lattice-Dynamical Properties of Short-Period GaN/AlN Superlattices
• Raman Scattering Characterization of Annealed GaNxAs1-x Layers
• Optical Transitions in GaNAs/GaAs Single Quantum Well
• Empirical Interatomic Potential Calculation for Compositional Instability of III-V Nitride Alloys in Lattice Mismatch Systems
• Theoretical Analysis of Multinary Nitride Semiconductors by Density Functional Theory
• Influence of Biaxial Strain on Thermodynamic, Structural and Electronic Properties of InxGa1-xN Alloys
• Electronic Structure Calculation of AlN, AlGaN2 and GaN in the Wurtzite Structure
• Nonuniform Contact Potential Profile of AlGaN/GaN on SiC Measured by Kelvin Probe Force Microscopy
• Thermal Stability of Pd/Al0.11Ga0.89N Schottky Diodes
• Local Vibrational Modes in Mg-doped GaN as a Probe of Activation and Deactivation of Acceptors
• Micro-Raman-Photoluminescence Study of Mg-doped GaN Materials Prepared by Metal Organic Chemical Vapor Deposition
• Photoluminescence of Mg-Diffused GaN Epilayer
• Inhomogeneous Spatial Distribution of Acceptor-Related Recombination Centers in Mg-Doped GaN
• Temperature Dependence of Magnesium Related Optical Transitions in GaN:Mg
• Selectively Enhanced Mg Incorporation into AlGaN Barrier Layer of Strained Layer SuperLattice
• Activation of Mg-Doped GaN by Thermal Annealing in Oxidizing Atmospheres
• Modulation Magnesium-Doping in AlGaN/GaN Superlattices
• Temperature-Dependent Hall Study on p-Type GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition
• Characterization of Carbon Doped GaN Films Grown by Molecular Beam Epitaxy
• Acceptor Activation of Mg-Doped GaN by Microwave Treatment
• Novel Methods of p-type Activation in GaN:Mg
• ICP Etching for the Fabrication of AlGaInN VCSELs with Dielectric Mirrors
• Bonding of GaN with Si using Selenium Sulphide (SeS2) and Laser Lift-Off
• The Optical and Electrical Characteristics of CO2 Laser Treated Mg-Doped GaN Film
• Effect of Nitrogen Plasma Treatment on Mg-Doped GaN and Blue LED
• Evaluation of Dislocation Densities in n-GaN Films by Photoassisted Anodic Etching
• Photoassisted Anodic Etching of n-InN Films in an AGW Electrolyte
• Photoluminescence and Photoconductivity Studies of Reactive-Ion-Etched GaN on SiC Substrates
• Tree-like Features Formed on Photoelectrochemically Etched n-GaN Surfaces: Revelation of Threading Dislocations in GaN
• In-Situ Dry Etch Monitoring for GaN/AlGaN Based Device Structures
• Electrical Properties of ICP Plasma-Damaged n-GaN
• Ti-Based Ohmic Contacts to p-type GaN/AlxGa1-xN Superlattices
• Transparent Low Resistance Ohmic Contact to p-type GaN and its Application to GaN Based Light Emitting Diodes
• Low p-Type Contact Resistance Using Mg-Doped InGaN and InGaN/GaN Superlattices
• Influence of Inhomogeneous Barrier on I-V Characteristics of Metal/GaN Schottky Diodes
• Formation of Low-Resistance, Thermally Stable, and Highly Transparent Pt-Based Ohmic Contacts to Surface-Treated p-GaN
• The Role of Annealing Ambient on the Formation of Ni/Au Ohmic Contacts to GaN LEDs
• Electrical Properties of Pd-Based Ohmic Contact to p-GaN with Au Diffusion Barrier
• Effect of Hydrogen Storage Materials on Ohmic Contact to p-GaN
• Electrical Properties and Reliabilities of Pt, PtAu, NiAu, and TaTi Ohmic Contact Materials for p-GaN
• The Effect of Surface Treatment on the Interfacial Reaction between Pd and p-GaN
• Large Schottky Barriers and Memory Capability for Ni Contacts Formed on Low Mg-Doped p-GaN
• High-Efficiency GaN/AlxGa1-xN Multi-Quantum Well Light Emitter Grown on Low-Dislocation Density AlxGa1-xN
• 339 nm Deep-UV Emission from Al0.13Ga0.87N/Al0.10Ga0.90N Double Heterostructure Light-Emitting Diode on Sapphire Substrate
• White Light Sources Based on InGaN
• InGaN/GaN Blue Light Emitter Grown on Si(111) Using an AlAs Seed Layer
• Quaternary AlInGaN-InGaN MQW Based Vertically Conducting Light Emitting Diodes on SiC
• Resonant Cavity Blue and Near Ultraviolet Light Emitting Devices
• Improved Electrical Property of InGaN/GaN Light-Emitting Diodes by Using a Mg-Doped AlGaN/GaN Superlattices
• Role of Nanostructures in the Radiative Recombination Process of InGaN-Based Light-Emitting-Diodes
• Electroluminescence from p-GaN/n-InGaN MQW Hexagonal Microprism Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy
• Fabrication of Light Emitting Diodes with GaInN Multi-Quantum Wells on Si (111) Substrate by MOCVD
• Short Period Alloy Superlattice for Transparent Conductive Layer of UV-Emitter
• Influence of the Thick GaN Buffer Growth Conditions on the Electroluminescence Properties of GaN/InGaN Multilayer Heterostructures
• GaN-Based High Power Blue-Violet Laser Diodes
• Fabrication of InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates by Laser Lift-Off
• RT-CW Operation of GaN-Based Laser Diodes Improved by GaN/GaInN Optical Guiding Layers
• Novel Design Proposed for Nitride VCSELs
• Analysis of Lateral Transverse Modes of Ridge-Geometry AlGaInN Laser Diodes
• On the Feasibility of Fundamental-Mode Operation in Unstable-Resonator InGaN Lasers
• Present Status of InGaN-Based Light-Emitting Diodes and Laser Diodes
• Advances in Blue Laser Diode Development for High Resolution Printing
• GaN-Based Resonant Cavity-Enhanced UV-Photodetectors
• Solar-Blind AlGaN PIN Hetero Junction Photodiode
• UV Solar Cells Based on Mg-Doped Hydrogenated GaN on Glass Substrates grown at 380^oC
• GaN Thin Film Gas Sensors
• Indium-Doping Enhanced Two-Dimensional-Electron-Gas Performance in AlGaN/GaN Heterostructures
• Fabrication of AlGaN/GaN HEMTs with Buried p-Layers
• Comparison of Ion Implantation Approaches in the Fabrication of AlGaN/GaN HFETs: Classical vs. Through the Gate Metal
• Properties of As-Grown, Chemically Treated and Thermally Oxidized Surfaces of AlGaN/GaN Heterostructure
• Effect of Gate Leakage Current on Noise in AlGaN/GaN HFETs
• Technology and Performance of AlGaN/GaN HEMTs Fabricated on 2-Inch Epitaxy for Microwave Power Applications
• Large Periphery AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates
• Theoretical Comparison of AlxGa1-xN/GaN (x=0.2 and 0.4) HJFETs Based on Full Band Monte Carlo Simulation
• Electron Transport Properties in AlGaN/GaN Heterostructure Field Effect Transistors at High Electron Densities
• Fabrication of a Heterostructure Field-Effect Transistor Using AlGaN/GaN
• Characterization of Short Channel AlGaN/GaN HEMTs-Breakdown Voltage and Gate Recess
• A New KOH-Based UV Assisted Wet Etching Technique and its Application to AlGaN/GaN HFET Fabrication and Characterization
• InGaN/GaN Double Heterojunction Bipolar Transistor Grown by Metalorganic Vapor Phase Epitaxy
• Optical Property of an AlGaN/GaN Hetero-Bipolar-Phototransistor
• Band Offsets and Current Transport in GaN Based HBTs
• Surface Acoustic Wave Filters at 2.4 GHz Using AlN Deposited on Off-Angle R-Plane Sapphire Substrates by MOCVD
• GaN Thin Film SAW Filter with High Velocity and Low Insertion Loss Grown by MOCVD
• UV Photoemission and Field Emission Study of AlGaN/GaN Emitters
• Heavily Si-Doped AlN Electron Field Emitters
• Prospects for Gallium Nitride Based Electronic Devices

Canadian Journal of Chemistry

1963

• The infrared spectra of trimethyl aluminum, dimethyl aluminum chloride, methyl aluminum dichloride, methyl titanum trichloride, dimethyl titanum dichloride and some deuterium derivatives
• Pyrolysis of trimethylgallium

1964

• Pyrolysis of trimethylindium

1968

• Determination of the heat of formation of trimethylindium and calculation of the mean indium-methyl bond dissociation energy

1974

• The molecular structure of trimethylindium determined by vapor phase electron diffraction

1979

• Pyrolysis of triethylgallium by the toluene carrier technique

Ceramics International

1982

• Sintering, oxidation and mechanical properties of hot pressed aluminum nitride

Chem. Berichte

1928

• Über phosphorescenzfähiges, durch Silicium aktiviertes Aluminumnitrid

Chemistry of Materials

1994

• Designated Molecular Deconstruction: The Facile Transformation of Ga(n(sime3)2)(osime3)2py (py = Pyridine) to GaN

1995

• GaN Film Growth Using Single Source Precursors
• Topochemical Control in the Solid State Conversion of Cyclotrigallazane into Nanocrystalline Gallium Nitride
• Effects of ammonia on the pyrolytic decomposition of alkylaluminum amides to aluminum nitride

1996

• Gallium Imide, {Ga(NH)3/2}n, a New Polymeric Precursor for Gallium Nitride Powders

1997

• Influence of Precursor Route on the Photoluminescence of Bulk Nanocrystalline Gallium Nitride

1998

• Nanocrystalline Aluminum Nitride and Aluminum/Gallium Nitride Nanocomposites via Transamination of [M(NMe2)3]2, M = Al, Al/Ga (1/1)

Chemical Physics

1994

• Aluminum, gallium and indium dihydrides. An IR matrix isolation and ab initio study
• Aluminium,gallium,and indium trihydrides. An IR matrix isolation and ab initio study

1996

• Excitonic quantum beats in semiconductor quantum well structures.

Chinese Physics Letters

1993

• Electronic Structures of Wurtzite Compounds GaN, Ain and Strained Layer Superlattice (ga2n2)1(al2n2)1 (001)
• Lmto Study on Band Structure of Beta SiC/Beta GaN (100) Interface

Comments on Inorganic Chemistry

1995

• Single Source Precursors to Group Iii (13)metal Nitrides

Computational Materials Science

1998

• Numerical simulation of low Mach number gas mixture flows with heat and mass transfer using unstructured grids

Chemical Physics Letters

1989

• Spectroscopic properties and potential energy curves of gallium monohydride
• Geometries and bond energies of GaH_n and GaH_n⁺ (n =1−3)

1990

• The characterization of simple organoaluminum fragments: AlCH, AlCH₂ and AlCH₃

1995

• Structures and thermochemistry of B₃N₃ and B₄N₄

1996

• Structure and vibrations of B_nN_n (n = 3−10)

Computer Physics Reports

1989

• Pseudopotential Methods in Condensed Matter Applications

Crystal Research and Technology

1981

• Optimized growth conditions of GaN epitaxial layers

1983

• On the origin of free carriers in high-conducting n-GaN

1996

• Thermal Analysis of LiGaO₂ and NaGaO₂

1991

• Growth velocities and disappearance of faces of crystals

1992

• On the critical growth velocities for the presence of faces on growing crystals

Chemical Society Reviews

1994

• The hydrides of aluminum, indium and thallium: A re-evaluation

Czech. J. Phys. B

1969

• Phonon structure of Mn⁴⁺ activator centers in AlN

1970

• The luminescence properties of AlN with manganese and rare earth activators under ultraviolet and cathode-ray excitation

1972

• Electron states of manganese luminescence centres in AlN
• Infrared cathodoluminescence of AlN

1973

• Luminescent properties of AlN activated by europium

Diamond and Related Materials

1997

• Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization
• Thermodynamics and high-pressure growth of (Al,Ga,In)N single crystals

The Electrochemical Society Meeting Abstracts

1996

• Development of GaN-based FET Technology for High-Frequency and High-Temperature Applications

Electrochemical Society Proceedings

1996

• Growth of InGaN Films and InGaN/AlGaN multiple Quantum Wells Produced by Molecular Beam Epitaxy

1997

• Ohmic Contacts to n- and p-GaN

1998

• Mechanisms of Electroluminescence in InGaN/AlGaN/GaN Heterostructures with Quantum Wells
• PiezoelectricEffects in AlGaN/GaN Heterostructure Field Effect Transistors

Electrical Engineering Japan

1967

• Electrical and optical properties of AlN--a thermostable semiconductor

European Journal of Solid State and Inorganic Chemistry

1996

• Heterogeneous solution reactions between MBr3 (M =Ga, In) and Li3N. Formation and Characterization of nanocrystalline GaN powders.

Electron Technology

1970

• Preparation of aluminum nitride crystals

1997

• Threshold evaluation of GaN/AlGaNAlN vertical-cavity surface-emitting lasers

Electrochem. Technol.

1968

• Aluminum nitride films by chemical transport

Electronics Letters

1984

• Electron mobility in indium nitride

1995

• AlN GaN Quarter Wave Reflector Stack Grown by Gas Source MBE on (100)GaAs
• Hydrogen incorporation in GaN, AIN, and InN during Cl2/CH4/H2/Ar ECR plasma etching

1994

• Current Voltage Characteristic Collapse in Algan/GaN Heterostructure Insulated Gate Field Effect Transistors at High Drain Bias
• Reactive Ion Etching of Gallium Nitride Using Hydrogen Bromide Plasmas
• Ecr Plasma Etching of GaN, AlN and Inn Using Iodine or Bromine Chemistries

1995

• High quality GaN growth at high growth rates by gas-source molecular beam epitaxy

1996

• Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency,

1994

• Electrical characterisation of Ti Schottky barriers on n-type GaN,

1996

• Refractive Index of AlGaInN Alloys
• Characterization of Pd Schottky barrier on n-type GaN
• High temperature characteristics of Pd Schottky contacts on n-type GaN

1997

• Effects of annealing on Ti Schottky barriers on n-type GaN

1996

• Blue and green electroluminescence from MBE grown GaN/InGaN heterostructures

1997

• GaN/AlGaN MODFET with 80 GHz fmax and >100V gate-drain breakdown voltage

1996

• Shortest wavelength semiconductor laser diode

1997

• Microwave Performance of 0.25um doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures
• 8 x 8 GaN Schottky barrier photodiode array for visible-blind imaging
• Piezoelectric charge densities in AlGaN/GaN HFETs
• Effects of proton irradiation on AlGaN/InGaN/GaN green light emitting diodes
• AlGaN-GaN heterostructure FETs with offset gate design
• Dependence of DC and RF characteristics on gate length for high current AlGaN/GaN HFETs
• Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC
• High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates

1998

• Optically Pumped InGaN/GaN Double Heterostructure Lasers with Cleaved Facets

1997

• Short-channel Al_{0. 5}Ga_{0. 5}N/GaN MODFETs with power density > 3W/mm at 18Ghz

1998

• Impact Ionization in AlGaN-GaN Heterostructure Field effect Transistors on Sapphire Substrates
• Avalanche Breakdown and Breakdown Luminescence in p-p-n GaN Diodes
• Room-Temperature Continuous-Wave Operation of InGaN/GaN Multiquantum Well Laser Diode

1999

• 1. 3 μm continuous-wave operation of GaInNAs lasers grown by metal organic chemical vapour deposition
• 1. 29 μm GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance

1996

• ICP Etching of GaN,

2000

• GaInAsN/GaAs laser diodes operating at 1. 52 μm

Europhysics Letters

1994

• Electronic Structure of Cubic GaN with Self Energy Corrections

Fiz. Tech. Polupr.

1969

• Tunnel effects in diffused p-n-junctions in Gallium Antimonide. 2. Radiative recombination

1975

• Blue - violet GaN light-emitting diodes

1995

• Photoluminescence of doped multiple quantum wells in GaAs/AlGaAs at high excitation level

High Temperature Material Processes

1998

• X-ray and single crystal values of the elastic constants and determination of machining residual stresses in AlN

Izvestiya of AN USSR Inorganic Materials

1986

• Criterion for the Formation of Solid Solutions Based on Silicon Carbide

1991

• Features of the Synthesis of Heteroepitaxial Structures Based on Solid Solutions of (SiC)1-x(AlN)x

IBM J. Res. Dev.

1973

• An AlN switchable memory resistor capable of a 20-MHz cycling rate and 500-picosecond switching time

IBM Technical Disclosure Bulletin

1996

• Full color active matrix display based on GaN lateral light emitting diode structures

IEEE Transactions Components Hybrids Manufacturing Technology

1989

• Steady-state thermal conductivity measurements of AlN and SiC substrate materials

IEEE Transactions on Electron Devices

1975

• Low-voltage blue electroluminescence in GaN

1993

• comparison of 6H-SiC, 3C-SiC and Si for power devices

1994

• Wide Bandgap Compound Semiconductors for Superior High Voltage Unipolar Power Devices

1996

• Wide Bandgap Semiconductor Materials and Devices
• SiC high power devices

IEEE Electron Device Letters

1982

• Obtaining the Specific Contact Resistance from Transmission Line Model Measurements

1989

• Importance of Source and Drain Resistance to the Maximum fT of Millimeter-Wave MODFET's

1996

• CW Operation of Short-Channel GaN/AlGaN Doped Channel Heterostructure Field Effect Transistors at 10 GHz and 15 GHz
• Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors
• Measured microwave power performance of AlGaN/GaN MODFET

1997

• 0.12-um gate III-V Nitride HFET's with high contact resistance
• Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100V
• Microwave Performance of AlGaN/GaN Inverted MODFETs
• High-temperature performance of AlGaN/GaN HFET's on SiC substrates
• high voltage double implanted power MOSFETs in 6H-SiC

1998

• High-power microwave 0.25-um gate doped-channel GaN/AlGaN heterostructure field effect transistor
• DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates
• High Al-content AlGaN/GaN MODFET's for ultrahigh performance
• Self-Heating in High Power AlGaN/GaN HFETs
• Low-frequency noise in AlGaN/GaN Heterostructure Field Effect Transistors
• high-voltage (2. 6 kV) lateral MOSFETs in 4H-SiC
• design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers

1999

• High-Power Microwave GaN/AlGaN HEMT‘s on Semi-Insulating Silicon Carbide Substrates
• GaN HBTs,

IEEE Journal of Quantum Electronics

1985

• Theory of the Temperature Dependence of the Threshold Current of an InGaAsP Laser
• Qualitative Evaluation of Gain and Losses in Quaternary Lasers

1989

• Identification of donors in GaAs by resonantly-excited high-field magnetospectroscopy

1992

• Analytic Expressions for the Reflection Delay, Penetration Depth, and Absorptance of Quarter-Wave Dielectric Mirrors
• Analytic Expressions for the Reflection Delay, Penetration Depth, and Absorptance of Quarter-Wave Dielectric Mirrors

1993

• Modal Reflection of Quarter-Wave Mirrors in Vertical-Cavity Lasers
• Experimental Study of Auger Recombination, Gain, and Temperature Sensitivity of 1. 5 μm Compressively Strained Semiconductor Lasers
• Modal Reflection of Quarter-Wave Mirrors in Vertical-Cavity Lasers

1995

• Scaling of Stark-Shifted Per-Carrier Nonlinearities in Multiple-Quantum-Well Device Structures

1998

• Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1-xN quantum-well lasers
• Effect of the (1010) Crystal Orientation on the Optical Gain of Wurtzite GaN/AlGaN Quantum Well Lasers
• Uniaxial Strain Effect on the Electronic and Optical Properties of Wurtzite GaN/AlGaN Quantum Well Lasers
• InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained-layer superlattices,

IEEE Journal on Selected Topics in Quantum Electronics

1997

• GaInNAs: a novel material for long-wavelength semiconductor lasers

1998

• Lasing Mechanism of InGaN-GaN-AlGaN MQW Laser Diode Grown on SiC by Low-Pressure Metal-Organic Vapor Phase Epitaxy
• Characteristics of InGaN-AlGaN Multiple-Quantum-Well Laser Diodes

IEEE Transactions on Microwave Theory and Techniques

1993

• X-Band Thin Film Acoustic Filters on GaAs

IEEE Photonics Technology Letters

1997

• A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers

IEEE Transactions on Sonics and Ultrasonics

1985

• Zero-temperature-coefficient SAW devices on AlN epitaxial films

IEEE Transactions on Plasma Science

1995

• Modeling of electron cyclotron resonance discharges

IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control

1995

• Surface Acoustic Wave Characterization of Pecvd Films on Gallium Arsenide

1996

• Publication and Proposed Revision of ANSI/IEEE Standard 176-1987 ‘ANSI/IEEE Standard on Piezoelectricity’

International Journal of High Technology Ceramics

1988

• The single crystal elastic constants of hexagonal SiC to 1000°ree;C

International Journal of Modern Physics B

1994

• Reactive ion etching of III-V semiconductors

Inorganic Chemistry

1963

• Trimethylamine adducts of gallane and trideuterogallane
• Preparation and characterization of trimethylamine gallane and bistrimethylamine gallane

1965

• Prediction of the stabilities of trialkylgallium addition compounds

1968

• Lewis acidity of alanes. Interaction of trimethylalane with amines, ethers, and phosphines

1982

• Spectra and structure of gallium compounds. IV. Vibrational studies of ammonia-trimethylgallane and ammonia-d₃-trimethylgallane

1989

• Organometallic precursors to AlN: Synthesis and crystal structures of ((CH₃)₂AlNH₂)₃ and the planar species ((t-C₄H₉)₂AlNH₂)₃

1990

• Me₃Al•NH₃ formation and pyrolytic methane loss: Thermodynamics, kinetics and mechanism

1993

• Cryogenic reactions of gallium with molecular hydrogen and methane

1997

• An Alternative Synthesis of Cyclotrigallazane, [H2GaNH2]3 - a Precursor to Nanocrystalline, Phase-Inhomogeneous Gallium Nitride, GaN

Inorganic Materials

1970

• Preparation of gallium nitride

1971

• X-ray analysis of gallium nitride

1972

• Preparation of GaN films by cathode sputtering

1973

• Thermal stability of complex nitrides of elements of subgroup IIIB

1979

• Thermodynamic analysis of methods of preparation of GaN
• Determination of elastic constants of hexagonal crystals from measured values of dynamic atomic displacements

1980

• Growth of GaN epitaxial layers on sapphire and SiC substrates

1982

• Growth and doping kinetics, cathode luminescence, and electrical properties of heteroepitaxial layers of gallium nitride

1986

• X-ray phase analysis and the elastic properties of gallium nitride

Institute of Physics Conference Series

1987

• Application of Monte Carlo simulations in the SEM study of heterojunctions

1988

• High efficiency blue LED utilizing GaN film with AlN buffer layer grown by MOVPE

1990

• uv and blue electroluminescence from Al/GaN:Mg/GaN LED treated with low-energy electron beam irradiation (LEEBI)
• Transient capacitance characterization of near-midgap donor-like interface states in AlN/GaAs MIS diodes
• Wide-gap Semiconductor (In,Ga)N

1993

• The Use of Selective Regrowth of HBTs

1994

• Prospects for high-pressure crystal growth of III-V nitrides
• temperature characteristics of SiC diodes

1995

• Properties of GaN Films Grown on A Plane (11(2)over Bar-0) and C Plane (0001) Sapphire
• Epitaxial Growth and Structural, Optical Properties of Cubic GaN on (100) and (111) GaAs Grown by Metalorganic Chemical Vapor Deposition
• Growth and Characterization of P/N Type GaN Grown at Reduced Substrate Temperatures by Plasma Enhanced (pe-) MOCVD
• GaN/Algan Field Effect Transistors for High Temperature Applications
• Some Aspects of GaN Electron Transport Properties
• Stimulated Emission from GaN Grown on SiC
• SiC-a(3)n Alloys and Wide Band Gap Nitrides Grown on SiC Substrates
• X-Ray Differential diffractometry applied to GaN grown on SiC
• Large Area Growth of GaN Thin Films in a Multi-Wafer Rotating DiskReactor
• Microstructure of GaN epitaxially grown on hydrogen plasma cleaned 6H-SiC substrates

1996

• High-quality GaN grown directly on SiC by halide vapour phase epitaxy.
• Dry etching of gallium nitride using CCl2F2, CCl4 and air.
• Excitonic Structure of GaN epitaxial films grown by Hydride-Vapor-Phase Epitaxy
• Edge electroluminescence of GaN-based pn structures grown on 6H-SiC
• MBE of GaN on 6H-SiC and GaAs substrates using hydrazine as a nitrogen source.
• Computer simulation of optical confinement in III-V nitride double heterostuctures.
• Nitride pn junctions grown on SiC substrates.
• Recent progress of crystal growth, conductivity control and light emitters of column-III nitrides, and future prospect of nitride-based laser diode.
• Growth of III-V nitrides by ECR-assisted MBE and fabrication of opto-electronic devices.
• Characterization of GaN grown with a high growth rate by RF-radical source molecular beam epitaxy.
• Initial stage of cubic GaN film growth on (001) GaAs by MOMBE using MMHy and TEG.
• The selective growth in hydride vapor phase epitaxy of GaN
• Relaxation and recombination dynamics in GaN/Al2O3 epilayers
• Exciton dynamics in GaN
• MOVPE production reactor technology for multiwafer SiC and GaN growth at very high temperatures
• Effect of nitrogen source conditions on the properties of GaN/saphire (0001) grown by ECR-MBE: PL and XRD study
• The growth of p-type epitaxial GaN films on saphire substrates in a production scale multi-wafer rotating disc MOCVD reactor
• Epitaxial growth of GaN films on silicon substrates by MOVPE
• Growth of zincblende GaN films by electron cyclotron resonance plasma enhanced chemical vapor deposition
• Crystal orietation of GaN films grown on (001) GaAs substrates by plasma-assisted metalorganic chemical vapor deposition
• Nitridation of GaAs (111)B substrates and heteroepitaxial growth of InN on the nitrided substrates
• Growth of GaN films by plasma-excited organometallic vapor phase epitaxy
• GaN-MOVPE: correlation between computer modelling and experimental data
• Mass-spectrometric study of gas reaction of trimethylgallium-monomethylhydrazine in a low-pressure metaloorganic chemical vapor deposition apparatus by in situ gas sampling
• LIF detection of excited-neutral N₂ from a nitrogen plasma source
• Growth characteristics of GaN films and initial layaers prepared by hot wall epitaxy
• Reflectance study of MOVPE grown GaN using triethylgallium and ammonia
• Preparation of AlN and GaN thin films by reactive ion beam sputtering and optical properties
• Optical properties of wurtzite GaN/AlGaN quantum wells
• Infrared reflectance and cathodoluminescence of AlN-GaN short period superlattice films
• Structural and optical characterization of GaN films grown by metalorganic chemical vapor deposition
• Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface
• Bandgap energy of cubic GaN
• Electronic structure of Ga_1-xIn_xN by the tight-binding method with nearest-neighbor s and p interactions
• Optical characterization of the free electron gas in bulk single crystals of GaN by means of Raman scattering and infrared reflectivity: evidence of phonon-plasmon coupled modes
• Characterization of GaN epitaxial films by Raman microprobe
• Raman and micro-Raman spectroscopy of GaN layers deposited on sapphire
• Dislocation in MOCVD-grown GaN films on saphire
• Ab initio calculation of structural and dynamical properties of AlN
• Investigation of optical properties of InN grown by atomic layer epitaxy
• RBS spectra of InN films grown on saphire substrate
• Fabrication of blue and green nitride light-emitting diodes
• Electronics devices based on GaN-AlGaN material system
• The state of SiC:GaN-based blue LEDs
• Degradation mechanisms of AlGaN/InGaN/GaN blue light emittig diodes
• Violet light emission from GaN/Al_0.05Ga_0.95N injection diode grown on 6H-SiC substrate by low-pressure MO-VPE
• Theoretical analisis of cubic GaInN/GaN/AlGaN quantum well lasers
• Design of GaN-based surface emitting laser with low threshold operation
• Doping and isolation of GaN, InGaN an InAlN using ion implantation
• Remote plasma hydrogenation of Mg-doped GaN
• Hydrogen diffusion and complex formation in GaN
• X-ray photoelectron spectroscopy of GaN layer formed on GaAs by NH₃-plasma nitridation and successive eximer-laser irradiation
• low power loss 4H-SiC Schottky rectifiers with high blocking voltage

1997

• Crystal defects and optical properties of GaN grown with different techniques: stacking fault related luminescence
• Controlled Growth of SiC and GaN by Sublimation Sandwich Method
• Porous GaN

Journal of the American Ceramic Society

1961

• Studies in the System Li₂O-Al₂O₃-Fe₂O₃-H_2O

1964

• Hydrothermal growth of large sound crystals of zinc oxide

1965

• Lithium-doped hydrothermally grown single crystals of zinc oxide.

1991

• Inversion domain boundaries in aluminum nitride

1993

• Vibrational Spectroscopy of Aluminum Nitride

1999

• Microstructure-property relations of hot-pressed silicon carbide-aluminum nitride compositions at room and elevated temperatures

Journal of the American Chemical Society

1914

• Dissociation pressures of ammonium and halides.

1941

• The alkyls of the third-group elements. I. Vapor-phase studies of the alkyls of aluminum, gallium and indium
• Alkyls of the third group elements. II. Electron diffraction study of indium trimethyl

1955

• Mass Spectra of Cyclopentadienyl Metal Compounds. Part I. Bis-cyclopentadienyl Compounds of V, Cr, Fe, Co, Ni, Re and Ru, and Manganese and Magnesium Cyclopentadienides

1958

• Electron deficient compounds. VIII. The crystal and molecular structure of trimethylindium

1962

• Vibrational frequencies of trimethylamine gallane and trimethylamine gallane-d₃

1967

• On the crystal structure of trimethylaluminum

1990

• Ladder structure of [(tBuNH₂)₂TaN]₅NH₃, 2C₇H₈ and its relationship to cubic TaN
• Evidence for the existence of unsaturated organoaluminium molecules in the gas phase: AlCH₂ , Al(CH₃)_x ( x = 1,2 ) and AlC₂H₄
• Vinylidene: The final chapter?

1991

• Relative aromaticity in heteropolar inorganic analogues of benzene

1992

• Electron paramagnetic resonance study of the reaction of ground-state Al atoms with NH₃ in a rotating cryostat
• Low valencies and periodic trends in heavy element chemistry. A theoretical study of relativistic effects and electron correlation effects in group-III and period-6 hydrides and halides

1993

• X-X direct bonds versus bridged structures in group-III X₂H₂ . Potential energy surfaces
• Theoretical study of the interaction of gallium atoms with methane,ethylene,1,3-butadiene,and bensene

1995

• New Single Source Precursor Approach to Gallium Nitride

1996

• Aminodimethylalane (Me₂AlNH₂): Matrix isolation and ab initio calculations

Journal of Applied Physics

1961

• Exciton structure and Zeeman effects in cadmium selenide

1964

• Double Injection in Deep-Lying Impurity

1970

• Low-temperature luminescence of GaN

1971

• Pressure and temperature dependence of the absorption edge in GaN
• Determination of kilovolt electron energy dissipation vs. penetration distance in solid materials

1972

• Luminescence of Zn- and Cd-doped GaN

1973

• Dielectric Parameterization of Raman Lineshapes for GaP with a Plasma of Charge Carriers
• Epitaxially grown AlN and its optical band gap
• CW degradation at 300 K of GaAs double-heterostructure junction lasers. II. Electronic gain,
• Luminescence of Be- and Mg-doped GaN

1974

• Properties of Zn-doped GaN. I. Photoluminescence
• Luminescence in epitaxial GaN:Cd
• Structure of vapor-deposited Ga_xIn_1-xAs crystals
• Properties of Zn-doped GaN. II. Photoconductivity
• Investigation of kilovolt electron energy dissipation in solids (by beam-induced currents in MOS capacitor)

1975

• Scanning electron microscopy studies of GaN
• Admittance Spectroscopy in Semiconductors
• Preparation and optical properties of Ga _1-xIn _xN thin films
• Growth morphology and surface-acoustic-wave measurements of AlN films on sapphire
• Thermal expansion of some diamondlike crystals

1976

• Photoluminescence of ion-implanted GaN

1977

• Electric properties of GaN light-emitting diodes
• The work function of the elements and its periodicity

1978

• Plasma deposition of Ga- and GaN

1979

• Composition and refractive index of Ga_1-xAl_xAs determined by ellipsometry
• Properties of VPE-grown GaN doped with Al and some iron-group metals
• Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region

1980

• Properties of Zn-doped VPE-grown GaN. I. Luminescence data in relation to doping conditions
• Properties of Zn-doped VPE-grown GaN. II. Optical cross sections

1981

• Formation of Al-nitride films at room temperature by nitrogen ion implantation into aluminum

1982

• Basal orientation aluminum nitride grown at low temperature by rf diode sputtering
• Properties of Al/x/Ga/1-x/N films prepared by reactive molecular beam epitaxy
• Electron channeling patterns in the scanning electron microscope,

1984

• Auger electron and x-ray photoelectron spectroscopy of sputter deposited aluminum nitride
• Secondary Ion Mass Spectrometry Analysis of Impurity Distribution Across Liquid Encapsulated Czochralski GaAs Wafers
• Atomic mixing and electron range effects in ultrahigh-resolution profiles of the Ta₂O₅/Ta interface by argon sputtering with Auger electron spectroscopy
• GaN blue light emitting diodes prepared by metalorganic chemical vapor deposition

1985

• Study of cracking mechanism in GaN/alpha -Al₂O₃ structure

1986

• Optical band gap of indium nitride
• Infrared absorption in indium nitride
• Evaporated Sn-doped In₂O₃ films: basic optical properties and applications to energy efficient windows

1987

• Substrate-orientation dependence of GaN single-crystal films grown by metalorganic vapor-phase epitaxy
• Energy band-gap bowing parameter in an Al_xGa_{1- x} N alloy
• Time-resolved spectroscopy of Zn- and Cd-doped GaN
• Electronic structure of an AlN film produced by ion implantation, studied by electron spectroscopy

1988

• A new technique for crystallographic characterization of heteroepitaxial crystal films
• Electrical properties of ion-implanted p-n junction diodes in β-SiC
• Distribution of atoms in mixed III-V compounds
• Optical properties and microstructure of reactively sputtered indium nitride thin films
• Substrate-polarity dependence of metal-organic vapor- phase epitaxy-grown GaN on SiC
• Influence of substrate-induced misfit stresses on the miscibility gap in epitaxial layers: Application to III-V alloys

1989

• Photoemission study of nitrogen-implanted GaAs surfaces
• Preparation and properties of III-V nitride thin films
• Piezoelectric properties and elastic constants of 4H and 6H SiC at temperatures 4-320K

1990

• Characterization of donorlike interface states which play a dominant role in the surface potential pinning in AlN/GaAs interfaces
• Reactions of atomic nitrogen and trimethyl aluminum downstream from a nitrogen microwave plasma
• Deep Donor Levels (DX Centers) in III-V Semiconductors
• Characterization of rf-sputtered InN films and AlN/InN bilayers on (0001) sapphire by the x-ray precession method
• Formation of aluminum nitride films on GaAs(110) at room temperature by reactive molecular-beam epitaxy: x-ray and soft x-ray photoemission spectroscopy

1991

• Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN, and InN on beta -SiC
• Growth of Al nitride layers on GaAs(100) by reaction with condensed ammonia
• Dynamics of laser sputtering at GaN, GaP, and GaAs surfaces

1992

• Epitaxial growth and characterization of zinc-blende gallium nitride on (001) silicon
• In situ monitoring and Hall measurements of GaN grown with GaN buffer layers
• Deep implantation of nitrogen into GaAs for selective three-dimensional microstructuring
• N vacancies in Al_xGa_1-xN
• The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy

1993

• A quantum statistical theory of linewidths of radiative transitions due to compositional disordering in semiconductor alloys
• Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties
• Luminescence due to lattice mismatch defects in ZnTe layers grown by metalorganic vapor phase epitaxy
• Deposition and surface characterization of high quality single crystal GaN layers
• Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy
• Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates
• Magnitude, Origin, and Evolution of Piezoelectric Optical Nonlinearities in Strained [111]B InGaAs/GaAs Quantum-Wells
• Pressure-induced rocksalt phase of aluminum nitride: A metastable structure at ambient condition
• Structural and Electrical Properties of Reactively Sputtered Inn Thin Films on AlN-Buffered (00.1) Sapphire Substrates: Dependence on Buffer and Film Growth Temperatures and Thicknesses
• Monte Carlo simulation of electron transport in gallium nitride
• In_xGa_(1-x)N/In_yGa_(1-y)N superlattices grown on GaN films
• Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates
• Growth and characterization of GaN on c-plane (0001) sapphire substrates by plasma-enhanced molecular beam epitaxy
• Study of Schottky contacts on n-Ga_0.51In_0.49P by low-pressure metal-organic chemical-vapor deposition
• The nature of donor conduction in n-GaN
• Growth of zinc blende-GaN on beta -SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical source
• Gallium Arsenide Passivation Through Nitridation with Hydrazine
• The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structure
• Doping of GaAs Using SF6 Plasma Treatment

1994

• Double Injection in Deep-Lying Impurity Semiconductors
• Raman scattering from LO phonon-plasmon coupled modes in gallium nitride
• Transparent and conductive impurity-doped GaN thin films prepared by an electron cyclotron resonance plasma metalorganic chemical vapor deposition method
• A Crystallographic Model of (00.1) Aluminum Nitride Epitaxial Thin Film Growth on (00.1) Sapphire Substrate
• Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates
• The effect of thermal annealing on GaN nucleation layers deposited on (0001) sapphire by metalorganic chemical vapor deposition
• Electron mobilities in gallium, indium, and aluminum nitrides
• Thermally annealed GaN nucleation layers and the device- quality metal organic chemical vapor deposition growth of Si-doped GaN films on (00.1) sapphire
• Ar⁺-ion milling characteristics of III-V nitrides
• Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
• Thermal stability of GaN thin films grown on (0001) Al₂O₃, (0112) Al₂O₃ and (0001)_Si 6H-SiC substrates
• Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer
• Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer
• Analysis of deep levels in n-type GaN by transient capacitance methods
• Theoretical study of GaN growth: A Monte Carlo approach
• Simulations for the transient response of graded Al_xGa_1-xN submicron photodetectors
• Growth of GaN by ECR plasma assisted MBE: The role of charged species
• Thermal expansion of gallium nitride
• Strain effects in epitaxial GaN grown on AlN-buffered Si(111)
• Nonlinear-Optical Response, Screening, and Distribution of Strain in Piezoelectric Multiple-Quantum Wells
• High brightness InGaN/AlGaN double-heterostructure light-emitting diodes
• Defect ordering in epitaxial alpha -GaN(0001)

1995

• High-temperature ohmic contact to n-type 6H-SiC using nickel
• Current-voltage characteristics of strained piezoelectric structures
• Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs
• Analysis of two-step-growth conditions for GaN on an AlN buffer layer
• Theoretical study of electron transport in gallium nitride
• Thermal stress in GaN epitaxial layers grown on sapphire substrates
• Properties of GaN films grown under Ga and N rich conditions with plasma enhanced molecular beam epitaxy
• GaP_1-xN_x alloys formed by ion implantation
• Second order Raman spectroscopy of the wurtzite form of GaN
• Alloy-scattering dependence of electron mobility in the ternary gallium, indium, and aluminum nitrides
• Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure
• Band gap of GaN films grown by molecular-beam epitaxy on GaAs and GaP substrates
• Plasma-assisted low-pressure metalorganic chemical vapor deposition of GaN on GaAs substrates
• H, He, and N implant isolation of n-type GaN
• Elastic strain relaxation in GaN-AlN-GaN semiconductor- insulator-semiconductor structures
• Base transit time of GaN/InGaN heterojunction bipolar transistors
• Epitaxial Growth of 3C-SiC Films on 4 in. diam (100) Silicon Wafers by Atmospheric Pressure Chemical Vapor Deposition,
• Growth of epitaxial AlN(0001) on Si(111) by reactive magnetron sputter deposition
• The influence of CH₄/H₂/Ar plasma etching on the conductivity of n-type gallium nitride
• Optical characterization of GaN films by photoreflectance and photocurrent measurement

1996

• The growth and properties of Al and AlN films on GaN(0001)-(1 (times) 1)
• Electronic properties of zinc-blende GaN, AlN, and their alloys Ga_1-xAl_xN
• Optically pumped GaN/Al_0.1Ga_0.9N double- heterostructure ultraviolet laser
• Photoluminescence studies of band-edge transitions in GaN epitaxial layers grown by plasma-assisted molecular beam epitaxy
• Degradation and Failure of MEH-PPV Light-emitting Diodes
• Numerical simulation of wide band-gap AlGaN/InGaN light- emitting diodes for output power characteristics and emission spectra
• Characteristics of light-emitting diodes based on GaN p- n junctions grown by plasma-assisted molecular beam epitaxy
• Excitonic emissions from hexagonal GaN epitaxial layers
• Characteristics of light-emitting diodes based on GaN p-n junctions grown by plasma-assisted molecular beam epitaxy
• Photoluminescence study of the 1.047 eV emission in GaN
• Elastic constants of gallium nitride
• Nitridation process of sapphire substrate surface and its effect on the growth of GaN
• Optical properties of wurtzite GaN grown by low-pressure metalorganic chemical-vapor deposition
• Comparative Raman studies of cubic and hexagonal GaN epitaxial layers
• Per-carrier nonlinear optical response of [111]-oriented piezoelectric InGaAs/GaAs multiple quantum wells
• Free excitonic transitions in GaN, grown by metal- organic chemical-vapor deposition
• Semiconductor ultraviolet detectors
• Reactive molecular beam epitaxy of wurtzite GaN: Materials characteristics and growth kinetics
• Optical gain of InGaP and cubic GaN quantum-well lasers with very strong spin- orbit coupling
• Magneto-optical studies of GaN and GaN/Al_xGa_{1- x}N: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance
• Calculation of the wave-vector-dependent interband impact-ionization transition rate in wurtzite and zinc-blende phases of bulk GaN
• Study of oxygen chemisorption on the GaN(0001)-(1(times) 1) surface
• Schottky contact and the thermal stability of Ni on n-type GaN
• Initial stages of GaN/GaAs(100) growth by metalorganic chemical vapor deposition
• Effect of e-beam irradiation on a p-n junction GaN light emitting diode
• Thermal stability of W ohmic contacts to n-type GaN
• Theoretical investigation of electrical characteristics of AlGaN/GaN modulation doped field effect transistor
• Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al/sub 2/O/sub 3/
• Cl₂/Ar and CH₄/H₂/Ar dry etching of III-V nitrides
• Raman scattering study of GaN films
• Growth of c-axis oriented gallium nitride thin films on an amorphous substrate by the liquid-target pulsed laser deposition technique
• Electrical conduction in platinum-gallium nitride Schottky diodes
• Luminescence studies of GaN grown on GaN and GaN/AIN buffer layers by metalorganic chemical vapor deposition
• Competition between band gap and yellow luminescence in GaN and its relevance for optoelectronic devices
• Empirical tight-binding calculation of the branch-point energy of the continuum of interface-induced gap states
• Optical properties of GaN epilayers on sapphire
• Ground and excited state exciton spectra from GaN grown by molecular-beam epitaxy
• Structural properties of cubic GaN epitaxial layers grown on beta-SiC
• On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy
• Observation of room temperature surface-emitting stimulated emission from GaN:Ge by optical pumping
• Strain Effect on electronic and optical properties of GaN/AlGaN QW Lasers

1997

• Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum well
• Effects of surface treatments and metal work functions on electrical properties at p-GaN/metal interfaces
• Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN3)
• Influence of defects on the electrical and optical characteristics of blue light-emitting diodes based on III-V nitrides
• Transient Ballistic Transport in GaN
• Optical Confinement and Threshold Currents in III-V Nitride Heterostructures: Simulation
• High Temperature Behavior of Pt and Pd on GaN
• Biaxial strain dependence of exciton resonance energies in wurtzite GaN
• Structural properties of ZnSe layers grown on (001) GaAs substrates tilted toward [110] and [010]
• Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices
• Properties of a photovoltaic detector based on an n-type GaN Schottky barrier
• Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN
• Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN
• The elastic constants of silicon carbide: A Brillouin-scattering study of 4H and 6H SiC single crystals
• Optical constants of epitaxial AlGaN films and their temperature dependence
• Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC
• Basal-plane stacking faults and polymorphism in AlN, GaN, and InN
• Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy
• Interfacial reactions between nickel thin films and GaN
• Persistent photoconductivity in n-type GaN

1998

• Electronic band structures and effective-mass parameters of wurtzite GaN and InN
• Magnesium acceptor levels in GaN studied by photoluminescence
• Band-gap separation in InGaN epilayers grown by metalorganic chemical vapor deposition
• The effect of thermal annealing on the Ni/Au contact of p-type GaN
• Photocurrent and photoluminescence measurements in the near-band-edge region of 6H GaN
• Magnetoexcitons in anisotropic semiconductors
• Determination of valence band splitting parameters in GaN
• Cathodoluminescence studies of the deep level emission bands of Al_xGa_1-xN films deposited on 6H-SiC (0001)
• Lattice site location studies of ion implanted 8Li in GaN
• Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy
• Photoluminescence spectroscopy of Mg-doped GaN
• Refractive index of InGaN/GaN quantum well
• Deep Centers and their Spatial Distribution in Undoped GaN
• GaN: Processing, defects, and devices

1999

• Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
• Piezoelectric-Franz-Keldysh effect in strained GaInN/GaN heterostructures
• Dislocation mediated surface morphology of GaN
• performance evaluation of high power wide bandgap semiconductor rectifiers
• Structure and composition of GaN (0001) A and B surfaces
• Brillouin scattering study of bulk GaN
• Structural and vibrational propereties of GaN
• Effect of nitrogen on the band structure of GaInNAs alloys
• Strain relaxation of GaNAs on GaAs (011) grown by molecular-beam epitaxy
• GaN: processing, defects and Devices

2000

• Heavy doping effects in Mg-doped GaN
• Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
• Effects of rapid thermal annealing on the optical properties of GaN_xAs_1-x/GaAs single quantum well structure grown by molecular beam epitaxy
• Strain variation with sample thickness in GaN grown by hydride vapor phase epitaxy
• Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
• Photoluminescence and cathodoluminescence of GaN doped with Pr
• Plasma cleaning and nitridation of sapphire surfaces: New evidence from in situ real time ellipsometry
• Electrical depth profile of p-type GaAs/Ga(As,N) heterostructures determined by capacitance-voltage measurements
• Visible emission from AlN doped with Eu and Tb ions

98

• Analysis of optical gain and threshold current density of InGaN/GaN/AlGaN quantum well lasers

Journal of the Acoustic Society of America

1965

• Some elastic constants of silicon carbide

Journal of Catalysis

1980

• Mechanism and Kinetics of Ammonia Decomposition on Iron

Journal of the Chinese Chemical Society

1995

• Low Pressure Chemical Vapor Deposition of Iii/V Nitrides Using Organometallics and Hydrazoic Acid Precursors

Journal of the Ceramic Society Of Japan

1993

• Reaction Between Ain and Metal Thin Films During High Temperature AnnealingNippon

Journal of Crystal Growth

1971

• Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substrates

1972

• Vapor epitaxy of gallium nitride

1974

• A new type of twin in an AlN crystal
• Kinetics of the epitaxial growth of GaN using Ga, HCl and NH₃
• Growth and morphology of GaN
• The growth, crystallographic and electrical assessment of epitaxial layers of aluminum nitride on corundum substrates
• Control of lattice parameters and dislocations in the system Ga_1-xAl_xAs_1-yP_y/GaAs
• Calculation of ternary and quaternary III-V phase diagrams

1975

• High pressure solution growth of GaN

1976

• Defects in epitaxial multilayers. III. Preparation of almost perfect multilayers
• Growth of high purity AlN crystals

1977

• Growth anisotropy in the GaN/Al₂O₃ system
• Effect of the growth parameters on the properties of GaN:Zn epilayers
• AlN Single Crystals

1981

• Study on the growth rate in VPE of GaN
• Various chemical mechanisms for the crystal growth of III-V semiconductors using coordination compounds as starting material in the MOCVD process

1982

• Lateral Growth of Single-Crystal InP Over Dielectric Films by Orientation-Dependent VPE,
• High pressure vapor growth of GaN

1983

• SOI by CVD: epitaxial lateral overgrowth (ELO) process - review
• Study on the influence of annealing effects in GaN VPE

1984

• Equilibrium pressure of N₂ over GaN and high pressure solution growth of GaN
• High Pressure Thermodynamics of GaN
• Crystal growth of GaN by the reaction between gallium and ammonia
• Effects of hydrogen in an ambient on the crystal growth of GaN using Ga(CH₃)₃ and NH₃

1986

• Equilibrium gas phase species for MOCVD of Alx Ga1-x As
• Low temperature growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxy
• Thermodynamic analysis of molecular beam epitaxy of III-V semiconductors

1988

• Elementary process of the thermal decomposition of the alkyl gallium
• Zn related electroluminescence properties in MOVPE grown GaN

1989

• Factors affecting the growth of aluminum nitride layers on sapphire by the reaction of nitrogen with aluminum monoselenide
• X-ray diffraction effects in Ga and Al arsenide structures MBE-grown on slightly misoriented GaAs (0 0 1) substrates
• Effects of an AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga _1-xAl _xN (0 < x ≤ 0.4) films grown on sapphire substrates by MOVPE

1990

• Theory of exciton linewidth in II-VI semiconductor mixed crystals
• Preparation of Al _xGa _1-xN/GaN heterostructures by MOVPE
• Thermodynamic calculations of congruent vaporization in III-V systems: applications to the In-As, Ga-As and Ga-In-As systems
• Thermodynamic analysis of molecular beam epitaxy of III-V compounds: Application to the Ga_yIn_1-yAs multilayer epitaxy
• Cathodoluminescence of MOVPE-grown GaN layer on α-Al₂O₃
• Growth of single crystal GaN substrate using hydride vapor phase epitaxy
• Epitaxial growth of indium nitride

1991

• MOVPE growth of GaN on a misoriented sapphire substrate
• Gallium desorption from (Al,Ga)As grown by molecular beam epitaxy at high temperatures
• Reduction of dislocations in InGaAs layer on GaAs using epitaxial lateral overgrowth
• The Radial Flow Planetary Reactor: Low Pressure versus Atmospheric Pressure MOVPE
• Step-density dependence of growth-rate on vicinal surface of MOCVD
• Growth mechanism of GaN grown on sapphire with AlN buffer layer by MOVPE
• Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE
• Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

1992

• Full color TV projector based on A²B⁶ electron-beam pumped semiconductor lasers
• Epitaxial Growth of GaAs and GaN by Gas Source Molecular Beam Epitaxy using Organic Group V Compounds
• MOVPE Growth of GaAs Using a N₂ Carrier

1993

• X-Ray Examination of GaN Single Crystals Grown at High Hydrostatic Pressure
• Molecular Beam Epitaxy of Nitride Thin Films
• Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytype
• Growth of GaN and AlGaN for uv/ blue p-n junction diodes
• The growth of thick GaN film on sapphire substrate by using ZnO buffer layer.
• The Growth of Single Crystalline GaN on a Si Substrate Using AlN as an Intermediate Layer
• Instability of III-V compound surfaces due to liquid phase formation
• Morphological Properties of Chemical Vapor Deposited AlN Films

1994

• The measurement of threading dislocation densities in semiconductors crystals by X-ray diffraction
• Epitaxial Growth of Cubic and Hexagonal GaN by Gas Source Molecular Beam Epitaxy Using a Microwave Plasma Nitrogen Source
• Deposition and Characterization of Diamond, Silicon Carbide and Gallium Nitride Thin Films
• Nitridation effects of substrate surface on the metalorganic chemical vapor deposition growth in InN on Si and alpha-Al2O3 substrates
• Comparison of GaN- and ZnSe-based materials for light emitters
• Interface chemistry and surface morphology in the initial stages of growth of GaN and AlN on alpha-SiC and sapphire
• Heteroepitaxy of Gallium Nitride on (0001), (1012BAR) and (1010BAR) Sapphire Surfaces
• Selective growth of wurtzite GaN and Al_xN on GaNand Al_xGa_1-xN on GaN/sapphire substrates bymetalorganic vapor phase epitaxy
• Surface Orientation Dependence of Growth Rate of Cubic GaN
• Metalorganic vapor phase epitaxy growth of (In_xGa_{1 - x}N/GaN)ⁿ layered structures and reduction of indium droplets
• Growth of GaAsN by low-pressure metalorganic chemical vapor deposition using plasma-cracked N₂
• Development of Advanced Mathematical Models for Numerical Calculations of Radiative Heat Transfer in Metalorganic Chemical Vapor Deposition Reactors

1995

• Influence of growth rates on properties of InN thin films
• GaN growth by MOCVD
• Surface reconstructions and growth mode transitions of AlAs(100)
• GaN Based Iii-v Nitrides by Molecular Beam Epitaxy
• The Growth and Properties of Group Iii Nitrides
• Effects of V/Iii Supply Ratio on Improvement of Crystal Quality of Zincblende GaN Grown by Gas Source Molecular Beam Epitaxy Using RF Radical Nitrogen Source
• GaN Growth by a Controllable RF Excited Nitrogen Source
• Analysis and optimization of the electron cyclotron resonance plasma for nitride epitaxy
• Molecular Beam Epitaxy of Gallium Nitride by Electron Cyclotron Resonance Plasma and Hydrogen Azide
• In Situ Monitoring of Reflection High Energy Electron Diffraction Oscillation During the Growth of Gallium Nitride Films by Gas Source Molecular Beam Epitaxy
• Growth of GaN Films by Combined Laser and Microwave Plasma Enhanced Chemical Vapor Deposition
• Observation of nanopipes in alpha-GaN crystals
• Characterization of Group III-nitride semiconductors by high-resolution electron microscopy
• Metalorganic Molecular Beam Epitaxy of Cubic GaN on (100)GaAs Substrates Using Triethylgallium and Monomethylhydrazine
• Some aspects of GaN growth on GaAs (100) substrates using MBE with an RF activated nitrogen plasma source
• Nitrogen precursors in metalorganic vapour phase epitaxy of (Al, Ga)N

1996

• Three-dimensional model of any shape face disappearance in crystal habit
• Acceptor bound biexcitons in ZnSe and CdS.
• Conditions of the excess liquid phase formation during the molecular beam epitaxy of III-V ternary compounds
• Crystal Growth of column-III nitride semiconductors and their electrical and optical properties
• Microstrucutral evolution and defect formation during the initial stages of the growth of SiC and AlN on 6H-SiC (0001) substrates
• Growth of group III nitrides by chemical beam epitaxy
• III-N light emitting diodes fabricated using RF nitrogen gas source MBE
• Growth of GaN by gas-source molecular beam epitaxy by ammonia and by plasma generated nitrogen radicals
• The investigation of GaN growth on silicon and sapphire using in-situ-time-of-flight low energy ion scattering and RHEED
• Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxy
• Growth Study of CBE of GaN_xP using NH3 and TBP
• The nitridation of GaAs and GaN deposition on GaAs examined by in situ time-of-flight low energy ion scattering and RHEED
• Three-dimensional model the disappearance of triangular faces in crystal habit
• Thermal etching of binary and ternary III-V compounds under vacuum conditions
• Growth and characterization of GaN layers on SiC substrates
• Influence of moisture and oxygen on the formation of cubic phase GaN in halide vapor phase epitaxial growth
• Inheritance of zinc-blende structure from 3C-SiC/Si(001) substrate in growth of GaN by MOCVD
• The microstructure of GaN monocrystals grown at high pressure
• Vapor Phase Epitaxy of GaN using GaCl₃/N₂ and NH₃/N₂

1997

• First III-V Nitride Violet Laser Diodes
• Novel single source precursors for MOCVD of AlN, GaN and InN
• Thermodynamic analysis of the MOVPE growth of In _xGa_1-xN
• Thermodynamic Analysis of MOVPE growth of InGaN
• MOVPE of GaN using a specially designed two flow horizontal reactor
• High quality GaN grown by MOVPE
• Low Pressure MOVPE of GaN and GaInN/GaN heterostructures
• New Dopant Precursors for n-type and p-type GaN
• Reduction of the defect density in GaN films using ultra-thin AlN buffer layers on 6H-SiC
• Growth of GaN/AlN and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium
• Selective Area Epitaxy of GaN for electron field emission devices
• Study of GaN and InGaN films grown by MOCVD
• Growth of bulk InGaN films and QWs by atmospheric MOCVD
• Photoluminescence excitation spectroscopy of GaPN alloys: conduction band edge formation by N incorporation
• GaN films studied by near-field scanning optical microscopy, atomic force microscopy and high resolution x-ray diffraction
• Characterization of GaN using thermally stimulated current and photocurrent spectroscopies and its application to UV detectors
• The influence of strain and mosaic structure on the electrical and optical properties of GaN films on sapphire substrates
• Photoluminescence characteristics of nitrogen atomic layer doped GaAs grown by MOVPE
• Pulsed laser deposition of epitaxial AlN, GaN, and InN thin films on sapphire(0001)
• Growth and characterization of GaN epilayers grown at various flow rates of trimetylgallium during growth of nucleation layers.
• Formation and photoluminescence spectrum of w-GaN powder
• Microstructural characterisation of GaN(As) films grown on (001) GaP by molecular beam epitaxy
• Plasma-excited OMVPE of GaN on (0001) sapphire
• Microstructure of GaN epitaxial films at different stages of the growth process on sapphire (0001)
• Optical and structural properties of GaN films grown on c-plane sapphire by ECR-MBE
• Stability of nitrogen in binary III-V systems
• The energetics of the GaN MBE reaction: a case study of meta-stable growth
• Growth and characterization of cubic GaN
• Supersonic jet epitaxy of III-nitride semiconductors
• Growth of GaN by HVPE
• Ion implantation in group III-nitride semiconductors: a tool for doping and defect studies
• GaN growth on sapphire
• Thermodynamical properties of III-V nitrides and crystal growth of GaN at high N₂ pressure
• Group IVB refractory metal crystals as lattice-matched substrates for growth of the group III nitrides by plasma-source MBE
• Observation of coreless dislocations in alpha-GaN
• GaN epitaxial growth on sapphire (0001): the role of the substrate nitridation
• Growth and characterization of In-based nitride compounds
• Feasibility of the synthesis of AlAsN and GaAsN films by plasma-source MBE
• Epitaxial growth of III-V nitride semiconductors by MOCVD
• Growth of group III nitrides by MOMBE
• Theory of AlN, GaN, InN and their alloys
• Gas source MBE of III-V nitrides
• Sublimation growth and characterization of bulk aluminum nitride single crystal
• Influence of magnesium doping on the structural properties of GaN layers
• Layer by layer growth of GaN and AlN by molecular beam epitaxy
• Chemical polishing of bulk and epitaxial GaN
• High rate GaN epitaxial growth by sublimation sandwich method

1998

• The effect of III/V ratio and substrate temperature on the morphology and properties of GaN and AlN-layers grown by molecular beam epitaxy on Si(111)
• Morphology and characterization of GaN single crystals grown in a Na flux
• Influence of in situ surface preparation and carrier gas on the growth mode of GaN in MOVPE
• Analysis of gallium nitride growth by gas-source molecular beam epitaxy
• On the nature of the 3. 41 eV luminescence in hexagonal GaN
• Unstable mixing region in wurtzite In_1‐x‐yGa_xAl_yN
• High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy
• Valenceband splitting and luminescence Stokes shift in GaInN/GaN thin films and multiple quantum well structures
• MOVPE of GaInN heterostructures and quantum wells
• Lateral overgrowth of GaN on patterned GaN/Sapphire substrate via selective metalorganic vapour phase epitaxy: a route to self supported GaN substrates
• The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures,
• Evaluation of nanopipes in MOCVD grown (0001) GaN/Al2O3 by wet chemical etching
• Preparation and properties of free-standing HVPE grown GaN substrates
• Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells
• The influence of Mg-concentration and carrier gas on the electrical and optical properties of GaN:Mg grown by MOVPE
• Influence of buffer layers on the In-content of GaInN layers
• Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition
• 1-eV solar cells with GaInNAs active layer

1999

• Chemical beam epitaxy of GaInNas/GaAs quantum wells and its optical property
• Strain effect on the N composition dependence of GaNAs bandgap energy grown on (001) GaAs by metalorganic molecular beam epitaxy
• InGaN-based blue light-emitting diodes and laser diodes,
• In situ monitoring of the decomposition of GaN thin films.

2000

• Mechanism analysis of improved GaInNAs optical properties through thermal annealing
• Determination of Tilt in the Lateral Epitaxial Overgrowth of GaN Using X-Ray Diffraction,
• On mechanisms of sublimation growth of AlN bulk crystals
• Transport Effects in the Sublimation Growth of Aluminum Nitride

2001

• Pendeo-Epitaxial Growth of Thin Films of Gallium Nitride and Related Materials and Their Characterization,
• On low temperature kinetic effects in metal –organic vapor phase epitaxy of III –V compounds

Journal of Cluster Science

1997

• Pathways to Nanocrystalline III-V (13-15) Compound Semiconductors

Journal of Chemical Physics

1932

• Nitrogen compounds of gallium III. gallic nitride

1953

• Crystal structure of aluminum nitride

1965

• Activation energy for the sublimation of gallium nitride
• Vaporization catalysis. The decomposition of gallium nitride

1974

• Mass spectrometric study of the gaseous gallium monocyanide

1976

• Thermodynamic functions of trimethylgallium

1980

• Spectra and structure of gallium compounds. II. Microwave, infrared,and Raman spectra,structure,and vibrational assignment of trimethylgallane
• The prototype aluminum-carbon single, double and triple bonds: AL−CH₃ , Al=CH₂ and Al≡CH

1981

• Reaction of N⁺₂ beams with aluminum surfaces

1988

• Solid-state ``magic-angle'' sample-spinning nuclear magnetic resonance spectroscopic study of group III-V (13-15) semiconductors Nuclear magnetic resonance of semiconductors

1989

• A study of the singlet and triplet states of vinylidene by photoelectron spectroscopy of H₂C=C, D₂C=C and HDC=C isomerization

1990

• Gallane-Arsine, H₃Ga•AsH₃ : Prediction of a stable Ga-As bonded species

1991

• Electronic states, ionization potentials and bond energies of TlH_n , InH_n ,TlH_n⁺ , and InH_n⁺ (n=1−3)
• The description of elementary organoaluminum fragments: AlCH_x (x = 1,2,3)

1992

• The known and unknown group-III hydride molecules M₂H₆ : Diborane(6), dialane(6) and digallane(6)
• Ammonia alane
• Characterization of Al atom insertion mechanisms into F−H, O−H, N−H, Cl−H, S−H and P−H bonds by ab initio MO methods

1996

• Electron spin resonance matrix isolation and ab initio theoretical investigations of ^69,71GaH₂ , ^69,71GaD₂ , H^69,71GaCH₃ , D^69,71GaCD₃

1997

• Surface composition and Structure of GaN epilayers on sapphire

Journal of the Chemical Society

1964

• Vibrational spectrum and structure of trimethylgallium

Journal of the Chemical Society A

1964

• Vibrational spectrum and sructure of trimethylgallium

1971

• Gas-phase Raman study of trimethylaluminum and trimethylboron monomers

Journal of the Chemical Society Dalton Transactions

1990

• Raman and X-ray crystallographic studies of solid trimethylindium

1992

• Organometallic precursors for the formation of GaN by metal-organic chemical vapour deposition: A study of ((CH3)2GaNH2)3

1994

• Chemical reactivities of [Me₂Al(m-NPr₂)MgMe]₄ and [Me₂Al(m-NEL₂)MgMe]₂ crystal structures

Journal of the Electrochemical Society

1960

• Some properties of aluminum nitride

1961

• On the preparation of the nitrides of aluminum and gallium

1962

• Luminescence in the System Al2O3-AlN
• Preparation, stability, and chemiluminescence of gallium nitride

1963

• Microhardness of single crystals of BeO and other wurtzite compounds

1971

• Gallium nitride films
• The use of metalorganics in the preparation of semiconductor materials. IV. The nitrides of aluminum and gallium

1972

• Heteroepitaxial thermal gradient solution growth of GaN
• Electrolytic etching of GaN
• The equilibrium pressure of N₂ over GaN
• Mass spectrometric studies of vapor-phase crystal growth

1973

• Vapor phase epitaxial growth of GaN on GaAs, GaP, Si, and sapphire substrates from GaBr₃ and NH₃

1974

• Crystal growth and characterization of gallium nitride
• Microstructural observations on gallium nitride light emitting diodes
• Few characteristics of epitaxial GaN--etching and thermal decomposition

1975

• Growth of GaN thin-films from triethylgallium monamine
• The preparation and properties of aluminum nitride films

1976

• Light emitting patterns of gallium nitride electroluminescence
• Optical properties of GaN light-emitting diodes
• Etching of GaN using phosphoric acid

1978

• Growth kinetics and catalytic effects in the vapor phase epitaxy of gallium nitride
• X-ray diffraction topography and crystal characterization of GaN epitaxial layers for light emitting diodes

1983

• Silicon on cubic zirconia

1986

• Epitaxial growth and properties of Al _xGa _1-xN by MOVPE
• Review of rapid thermal annealing of ion implanted GaAs

1988

• Thermal diffusion in Metal-Organic Chemical Vapor Deposition

1994

• Widegap Column III Nitride Semiconductors for UV/Blue Light Emitting Devices

1996

• Dislocation Etch Pits in GaN Epitaxial Layers Grown on Sapphire Substrates
• Selective dry etching of III-nitrides in Cl₂/Ar,CH₄/H₂/Ar, ICl/Ar and IBr/Ar

1997

• A Mass Spectroscopic Study of the Vapor Phase Thermal Decomposition of Trimethylamine
• Photoassisted Anodic Etching of Gallium Nitride

Journal of Electronic Materials

1973

• Epitaxial growth and piezoelectric properties of AlN, GaN, and GaAs on sapphire or spinel

1974

• Some properties of InN films prepared by reactive evaporation

1975

• The structural and piezoelectric properties of epitaxial AlN on Al₂O₃
• Some properties of chemically vapor deposited films of Al _xO _yN _z on silicon

1977

• Characterization of GaN epitaxial layers using cathodoluminescence

1978

• Gallium nitride emitting devices preparation and properties
• Energy Bandgap and Lattice Constant Contours of III-V Quaternary Alloys of the Form A_xB_yC_zD or AB_xC_yD_z

1983

• Passivation of GaAs surfaces

1985

• MOCVD epitaxial growth of single crystal GaN, AlN and Al _xGa _1-xN

1989

• Auto lattice matching effect for AlInAs grown by MBE at high substrate temperature
• Characterization of Mg-doped InP grown by MOCVD using a bis(Methylcylopentadienyl) magnesium dopant source

1991

• Ultraviolet Photoluminescence from Undoped and Zn Doped AlxGa1-xN with x between 0 and 0.75

1992

• Wide-Gap Semiconductor InGaN and InGaAlN Grown by MOVPE
• Metalorganic Chemical Vapor Deposition Growth of High OPtical Quality and High Mobility GaN.

1994

• Gas Composition Dependence of Silicon Nitride Used as Gallium Diffusion Barrier During GaAs Molecular Beam Epitaxy Growth on Si Complementary Metal Oxide Semiconductor
• Optical Third Harmonic Investigations of Gallium Nitride Nucleation Layers on Sapphire
• Modulated Reflectance and Absorption Characterization of Single Crystal GaN Films
• Domain Epitaxial Growth of TiN/Si(001), TiN/GaAs(001), and Si/TiN/Si(001) Heterostructures by Laser Physical Vapor Deposition: Theory and Experiment

1995

• The Role of the Low Temperature Buffer Layer and Layer Thickness in the Optimization of OMVPE Growth of GaN on Sapphire
• The Effect of Organometallic Vapor Phase Epitaxial Growth Conditions on Wurtzite GaN Electron Transport Properties
• Basic Studies of Gallium Nitride Growth on Sapphire by Metalorganic Chemical Vapor Deposition and Optical Properties of Deposited Layers
• Doping of Gallium Nitride Using Disilane
• A new buffer layer for MOCVD growth of GaN on sapphire
• Epitaxial Growth of Cubic GaN on (111) GaAs by Metalorganic Chemical Vapor Deposition
• Native defects and dopants in GaN studied through photoluminescence and optically detected magnetic resonance
• Valence Band Discontinuity Between GaN and AlN Measured by X-Ray Photoemission Spectroscopy
• Chemically Assisted Ion Beam Etching of Gallium Nitride
• A Microstructural Comparison of the Initial Growth of AlN and GaN Layers on Basal Plane Sapphire and SiC Substrates by Low Pressure Metalorganic Chemical Vapor Deposition
• The Influence of Nitrogen Ion Energy on the Quality of GaN Films Grown with Molecular Beam Epitaxy
• High Quality GaN Heteroepitaxial Films Grown by MOCVD
• The Growth and Properties of Mixed Group V Nitrides
• The Effect of GaN and AlN Buffer Layers on GaN Film Properties Grown on Both C Plane and A Plane Sapphire
• Operation of a compactelectron cyclotron resonancesource for the growth of GaN by MBE

1996

• A study of parasitic reactions between NH₃ and TMGa or TMAl
• Structural Characterization of Bulk GaN crystals Grown Under High Hydrostatic Pressure
• Mass Spectroscopy Study of GaN Metalorganic Chemical Vapor Deposition
• Thermal expansion, molar volume and specific heat of diamond from 0 to 3000K
• Effect of Shroud Flow on High Quality InxGa1-xN Deposition in a production Scale Multi-wafer Rotating Disk reactor
• Electron Mobility in Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures and in Bulk GaN
• Real-Time Monitoring of the Surface Stoichiometry During Molecular Beam Epitaxy of Cubic GaN on (001)GaAs by RHEED
• MBE Growth and Properties of GaN and Al_xGa_1-xN on GaN/SiC Substrates
• Residual Impurities in GaN/Al2O3 Grown by Metalorganic Vapor Phase Epitaxy
• Cleaning of GaN Surfaces
• Estimated Phase Equilibria in the Transition Metal-Ga-N Systems:Consequences for Electrical Contacts to GaN
• Ohmic Contacts to n-Type GaN Using Pd/Al Metallization
• Dry Etching of GaN Using Chemically Assisted Ion Beam Etching with HCl and H2/Cl2
• Schottky Barriers on n-GaN Grown on SiC
• Reactive Ion Etching of Gallium Nitride Films
• Ion Implantation and Rapid Thermal Processing of III-V Nitrides
• The Incorporation of Hydrogen into III-V Nitrides During Processing
• Magnetic Resonance Studies of GaN Based Light Emitting Diodes

1997

• Effect of In Situ Thermal Cycle Annealing on GaN Film Properties Grown on (001) and (111) GaAs, and Sapphire Substrates
• The Effect of Substrate Surface Roughness on GaN Growth Using MOCVD Process
• Characterization of MOVPE-Grown (Al, In, Ga) N Heterostructures by Quantitative Analytical Electron Microscopy
• Stability and Interface Abruptness of In_xGa_1-xN/In_yGa_1-yN Multiple Quantum Well Structures Grown by OMVPE
• Nucleation and Growth Behavior for GaN Grown on (0001) Sapphire via Multistep Growth Approach
• Flow Modulation Epitaxy of Indium Gallium Nitride
• Al-Ga-In-Nitride Heterostructures: MOVPE Growth in Production Reactors and Characterization
• Electrical and Optical Properties of Oxygen Doped GaN Grown by MOCVD Using N₂O
• Plasma Characteristics and the Growth of Group III-Nitrides by Metalorganic Molecular Beam Epitaxy
• Effect of Dry Etching on Surface Properties of III-Nitrides
• The Role of Ion Characteristics in Determining the Structural and Electrical Quality of InN Grown by Metalorganic Molecular Beam Epitaxy
• Growth and characterization of GaN thin films on SiC SOI substrates
• Correlation of biaxial strains, bound exciton energies, and defect microstructures in GaN films grown on AlN/6H-SiC (0001) substrates
• Hot plasma chemical vapor deposition of GaN on GaAs(100) substrate
• Growth of GaBN Ternary Solutions by Organometallic Vapor Phase Epitaxy
• Effect of Structural Defects and Chemical Impurities on Hall Mobilities in Low Pressure MOCVD Grown GaN
• Gas-Source Molecular Beam Epitaxial Growth and Characterization of InN_xP_1-x on InP
• The Effect of Substrate Misorientation on the Optical, Structural, and Electrical Properties of GaN Grown on Sapphire by MOCVD
• Low Resistance Bilayer Nd/Al Ohmic Contacts on n-Type GaN
• Characterization of reactive ion etching-induced damage to n-GaN surfaces using Schottky diodes
• In Situ Control of GaN Growth by Molecular Beam Epitaxy
• Study of Indium droplets Formation on the InGaN Films by SIngle Crystal X-ray Difraction.
• Structure of GaN Films Grown by Molecular Beam Epitaxy on (0001) Sapphire
• MOVPE Growth and Optical Properties of GaN Deposited on c-Plane Sapphire
• Highly Anisotropic, Ultra-Smooth Patterning of GaN/SiC by Low Energy Electron Enhanced Etching in DC Plasma
• Characteristics of GaN Stripes Grown by Selective-Area Metalorganic Chemical Vapor Deposition
• Tunneling Current and electroluminescence in InGaN:Zn,Si/AlGaN/GaN blue liight emitting diodes
• Growth of Zinc-Blende GaN on GaAs (100) Substrates at High Temperature Using Low-Pressure MOVPE with a Low V/III Molar Ratio
• Photoluminescence Characteristics of GaN/InGaN/GaN Quantum Wells
• Improvement of Metal-Semiconductor-Metal GaN Photoconductors
• Ion Implantation Doping of OMCVD Grown GaN
• Role of Interfacial-Charge in the Growth of GaN on 6H-SiC
• Growth of Thick GaN Films on RF Sputtered AlN Buffer Layer by Hydride Vapor Phase Epitaxy

1998

• Improved Sidewall Morphology on Dry Etched, SiO₂ Masked GaN Features,
• Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy
• Metal contacts to n-type GaN
• The Effects of Reactive Ion Etching-Induced Damage on the Characteristics of Ohmic Contacts to n-Type GaN
• Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy
• Dopant-selective photoenhanced wet etching of GaN
• Preparation of Atomically Flat Surfaces of Silicon Carbide Using Hydrogen Etching
• Antisite Arsenic Incorporation in the Low Temperature MBE of Gallium Arsenide: Physics and Modeling
• Antisite Arsenic Incorporation in the Low Temperature MBE of Gallium Arsenide: Physics and Modeling

1999

• Interfacial effects during GaN growth on 6H-SiC,
• Plasma Etch Induced Conduction Changes in GaN,
• Pendeo-Epitaxy- A New Approach for Lateral Growth of Gallium Nitride Films,

2000

• MOCVD Growth of Cubic GaN on 3C-SiC Deposited on Si(100) Substrates

2001

• Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy

Soviet Physics JETP

1976

• Multiphonon processes in resonant scattering and exciton luminescence of crystals

JETP Letters

1990

• Laser cathode-ray tube with a ZnO-screen as an ultraviolet source in projection exposure systems

Journal of the European Ceramic Society

1993

• Microstructure and Thermal Conductivity of AlN(y2o3) Ceramics Sintered in Different Atmospheres

Johns Hopkins APL Technical Digest

1997

• Development of Gallium Nitride Photoconductive Detectors

Japanese Journal of Applied Physics

1974

• Temperature dependence of photoluminescence from GaN
• Anomalous behaviour in GaN-Zn junctions
• Pair luminescence from Zn-doped GaN

1976

• Epitaxial growth of undoped and Mg-doped GaN

1979

• Photoluminescence in P-doped GaN

1980

• Mechanism of yellow luminescence in GaN
• High-frequency and low-dispersion characteristics of surface acoustic waves on AlN/Al₂O₃

1981

• Epitaxial growth of aluminum nitride on sapphire using metalorganic chemical vapor deposition
• Low temperature growth of gallium nitride

1982

• Unstable regions in III-V quaternary solid solutions composition plane calculated with strictly regular solution approximation
• Film growth of GaN on a c-axis oriented ZnO film using reactive ionized-cluster beam technique and its application to thin film devices

1983

• Effects of lattice mismatch on the solidus compositions of Ga_xIn_1-xP liquid phase epitaxial growth

1985

• Epitaxial growth of GaN _1-xP _x (x ≤ 0.04) on sapphire substrates

1986

• Low temperature growth of GaN and AlN on GaAs using metalorganics and hydrazine

1987

• Growth characterization of low-temperature MOCVD GaN--Comparison between N₂H₄ and NH₃

1988

• Effect of AlN buffer layer on AlGaN/α-Al₂O₃ heteroepitaxial growth by metalorganic vapor phase epitaxy
• Heteroepitaxial growth of GaN _1-xP _x (x≤0.06) on sapphire substrates
• Interfacial superstructure of AlN/n-GaAs(001) system fabricated by metalorganic chemical vapor deposition
• Heteroepitaxial growth and the effects of strain on the luminescent properties of GaN films on (11&twobar;0) and (0001) sapphire substrates
• Improvement of the electrical properties of the AlN/GaAs MIS system and their thermal stability by GaAs surface stochiometry control

1989

• P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
• Effects of In- surface treatment on the electrical properties and structures of AlN/n-In- interface
• Properties of Ga _1-xIn _xN films prepared by MOVPE
• Growth of InN on GaAs substrates by the reactive evaporation method
• p-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation

1990

• Stimulated emission near ultraviolet at room temperature from a GaN film grown on sapphire by MOVPE using an AlN buffer layer
• Thermal stability of the AlN/a-Si/GaAs MIS diodes with different GaAs surface stochiometry
• Control of the electrical properties of AlN/thin-a-Si/GaAs MIS diodes by GaAs surface pretreatments

1991

• Cathodoluminescence properties of undoped and Zn-doped Al_xGa_1-xN grown by metalorganic vapor phase epitaxy
• In situ monitoring of GaN growth using interference effects
• Preparation of AlN-Al₂O₃ composite films by microwave plasma chemical vapor deposition
• Metalorganic vapor phase epitaxial growth and properties of GaN/Al _0.1Ga_0.9N layered structures
• Structure control of GaN films grown on (001) GaAs substrates by GaAs surface pretreatments
• High-power GaN p-n junction blue-light-emitting diodes
• Highly p-typed Mg-doped GaN films grown with GaN buffer layer
• GaN Growth Using GaN Buffer Layer
• Defect Filtering in GaAs on Si by Conformal Growth

1992

• Hole compensation mechanism of p-type GaN films
• Si- and Ge doped GaN films grown with GaN buffers layers
• Heteroepitaxial Growth of GaN1-XPx (x Less Than or Equal to 0.09) on Sapphire Substrates
• Thermal Annealing Effects on P-Type Mg-Doped GaN Films
• High-Quality InGaN Films Grown on GaN Films
• Relaxation Process of the Thermal Strain in the GaN/Al₂O₃ Heterostructure and Determination of the Intrinstic Lattice Constants of GaN Free from the Strain
• Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

1993

• Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor PHASE Epitaxy
• Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
• Growth of Single Crystal AlxGa1-XN Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
• Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from AlGaN/GaN Double Heterostructure
• Si-doped InGaN films grown on GaN films
• Cd-doped InGaN films grown on GaN films

1994

• High-resolution electron microscopy of extended defects in wurtzite crystals
• Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
• Transmission electron microscope observation of cubic GaN grown by metalorganic vapor phase epitaxy with dimethylhydrazine on (001) GaAs
• Temperature Dependence of Band Gap Change in InN and AlN
• Formation of Cubic GaN on (111)b GaAs by Metal Organic Vapor- phase Epitaxy with Dimethylhydrazine
• InN thin film growth using N₂, NH₃ and N₂-He rf plasma
• ZnCdSe/ZnSe quantum-well laser-diode on a (711)A GaAs substrate
• Characterization of the shallow and deep levels in Si doped GaN grown by metal-organic vapor phase epitaxy
• Substrate Nitridation Effects on GaN Grown on GaAs Substrates by Molecular Beam Epitaxy Using RF Radical Nitrogen Source
• Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
• H Atom Incorporation in Mg Doped GaN Grown by Metalorganic Chemical Vapor Deposition
• Gas-Source Molecular Beam Epitaxy of GaN_xAs_1-x Using a N Radical as the N Source
• GaN Core Relaxation Effects and Their Ramifications for P-Type Doping

1995

• fabrication of GaN hexagonal pyramids on dot-patterned GaN/Sapphire substrates via selective metalorganic vapor phase epitaxy
• Stimulated-Emission by Current Injection from an AlGaN/GaN/GaInN quantum-well device
• Threshold Estimation of GaN-Based Surface Emitting Lasers Operating in Ultraviolet Spectral Region
• Raman scattering of Se-doped gallium Nitride films
• Schottky Barrier on n-Type Al_0.14Ga_0.86N Grown by Oganometallic Vapor Phase Epitaxy
• High-Brightness InGaNBlue,Green and Yellow Light-Emitting Diodes with Quantum Well Structures
• Superbright Green InGaN Single-Quantum-Well-Structure Light-Enmitting Diodes
• Effect of Biaxial Strain on Cubic and Hexagonal GaN Analyzed by Tight-Binding Method
• Determination of the Conduction Band Electron Effective Mass inHexagonal GaN
• GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam Epitaxy
• The strain Energy Densities of Hexagonal and Tetragonal Epitaxial Media
• Epitaxial Growth of GaN on Sapphire (0001) Substrates by Electron Cyclotron Resonance Molecular Beam Epitaxy
• New Epitaxial Growth Method of Cubic GaN on (100)GaAs Using (ch3)(3)ga, HCl and Nh3
• Transmission Electron Microscopic Observation of AlN/Alpha Al2o3 Heteroepitaxial Interface with Initial Nitriding Ain Layer
• High-Brightness InGaN Blue,Green and Yellow Light-Emitting Diodes with Quantum Well Structures

1996

• Model for lasing Oscillation due to Bi-Excitons and Localized Biexcitons in Wide-Gap Semiconductor Quantum Wells
• GaInNAs: a novel material for long-wavelength-range laser diodes with excellent high-temperature performance
• Biaxial Strain Effect on Wurtzite GaN/AlGaN Quantum Well Lasers
• Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method
• Growth and characterization of thick GaN by sublimation method and homoepitaxial growth by metalorganic chemical vapor deposition
• Tight-Binding Analysis of the Optical Matrix Element in Wurtzite- and Zincblende-GaN Quantum Wells
• Photoluminescence Properties of GaN Grown under Ion Flux Reduced Condition by Plasma Enhanced Molecular Beam Epitaxy
• On the Theory of Optical Gain of Strained-Layer Hexagonal and Cubic GaN Quantum-Well Lasers
• Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane
• Synthesis of AlN Thin Films on Sapphire Substrates by Chemical Vapor Deposition of AlCl3-NH3 System and Surface Acoustic Wave Properties
• Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate
• Crystal Orientation Effect on Valence-Subband Structures in Wurtzite-GaN Strained Quantum Wells
• Surface Morphology Study for Hexagonal GaN Grown on GaAs(100)
• Coloring and Bleaching Reactions of Photonic Molecules by using a Single GaN-based Light Emitting Diode
• Morphological and Structural Transitions in GaN Films Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
• Theoretical Study of the Surface Reaction Mechanism of GaN with HCl
• InGaN MQW Structure Laser Diodes with Cleaved Mirror Facets
• Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire
• High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2x2) and (4x4) Reflection High Energy Electron Diffraction Patterns
• Electrical Transport Properties of p-GaN
• InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
• Biexciton luminescence from GaN epitaxial layers
• Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
• First-Principles Calculations on Mg Impurity and Mg-H Complex in GaN
• Analysis of Influence of Alkyl Sources on Deep Levels in GaN by Transient Capacitance Method
• Reduction of Threshold Current Density of Wurtzite GaN/AlGaN Quantum Well Lasers by Uniaxial Strain in (0001) Plane
• Growth of InN by chloride-transport VPE
• Room Temperature pulsed operation of nitride based MQW laser diodes with cleaved facets on conventional c-face sapphire substrates
• TEM of sublimation grown GaN single crystal and GaN homoepitaxial films

1997

• Morphologyabd X-ray Diffraction Peak Widths of Aluminum Nitride Single CrystalsPrepared by the Sublimation Method
• Raman and Electrical Characterizations of a-GaAs_1-xN_x Thin Films Grown on c-Si(p) Substrates by N₂ Reactive Sputtering
• Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate
• Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
• Room-Temperature operation of GaInNAs/GaInP DH Laser Diodes grown by MOCVD
• Experimental Surface Acoustic Wave Properties of AlN Thin Films on Sapphire Substrates
• MOVPE of Thick InGaN on Sapphire Substrate
• Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy
• Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells
• Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
• Hydride Vapor Phase Epitaxy of In_xGa_1-xN Thin Films
• Modeling of a pulsed-power SF₆ plasma
• Effect of Plasma Parameter Control on the Growth of Zincblende Type GaN Films by ECR Plasma Enhanced Metalorganic Chemical Vapor Deposition
• Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
• Structural Analysis of Cubic GaN through X-Ray Pole Figure Generation
• Atomic Scale Indium Distribution in a GaN/In0. 43GaN0. 57N/Al0. 1Ga0. 9N Quantum Well Structure
• Investigation of the Indium Atom Interdiffusion on the Growth of GaN/InGaN Heterostructures
• Cubic Dominant GaN Growth on (001) GaAs Substrates by Hydride Vapor Phase
• LiGaO₂ Single Crystals for a Substrate of Hexagonal GaN Thin Films
• Optical Properties of Strained AlGaN and GaInN on GaN
• Materials Design for the Fabrication of Low-Resistivity p-Type GaN Using a Codoping Method
• Nucleation Control in the Growth of Bulk GaN by Sublimation Method
• Morphology and X-Ray Diffraction Peak Widths of Aluminum Nitride Single Crystals Prepared by the Sublimation Method
• Theoretical Investigations of Thermodynamic Stability of III-III-N
• Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-µm Intersubband Transition in AlGaN/GaN Quantum Wells
• InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy
• Growth of GaN on GaAs(111)B by Metalorganic Hydrogen Chloride VPE Using Double Buffer Layer
• Thermodynamic Study on Metalorganic Vapor-Phase Epitaxial Growth of Group III Nitrides
• High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
• Growth of Ga_1-xB_xN by Molecular Beam Epitaxy
• High Quality Homoepitaxial GaN Grown by Molecular Beam Epitaxy with NH₃ on Surface Cracking
• Initial Stages of Cubic GaN Growth on the GaAs(001) Surface Studied by Scanning Tunneling Microscopy
• InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-LayerSuperlattices
• Bandgap energy of GaNAs alloys grown on (001) GaAs by metalorganic molecular beam epitaxy
• Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
• Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
• Growth of GaN and Al_0.2Ga_0.8N on Patterened Substrates via Organometallic Vapor Phase Epitaxy
• Epitaxial Growth of InN by Plasma-assisted MOCVD
• Crystalline Structure changes in GaN Films Grown at Different Temperatures
• VPE of In_xGa_1-xN using InCl₃, GaCl₃ and NH₃ sources
• GSMBE growth of GaN on c-, a-, r- and m-plane sapphire and silica glass substrates
• Growth of InN at High Temperature by HVPE
• GaN Thin Film Growth on LiGaO₂ Substrate with a Multi-Domain Structure
• Thermodynamic Analysis on Molecular Beam Epitaxy of GaN, InN and AlN
• Theoretical Analysis of the Threshold Current Density in GaN/AlGaN Strained QW Lasers with a Modulation-doped Structure
• Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
• Effects of Dissolved Oxygen on Anodic Etching of n-Type GaN Films Using a Sodium Hydroxide Electrolyte
• Feasibility study on ultrafast non-linear optical properties of 1.55 micron intersubband transition in AlGaN/GaN QWs
• Polarized reflectance spectroscopy and spectroscopic ellipsometry determination of the optical anisotropy of GaN on sapphire

1998

• Current and temperature dependence of electroluminescence of InGaN-based UV/blue/green light-emitting diodes
• Ohmic Contact to P-Type GaN
• Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganic Chemical Vapor Deposition
• Room-Temperature Continuous Wave Operation of InGaN Laser Diodes with Vertical Conducting Structure on SiC Substrate
• Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition
• Growth of GaN on Indium Tin Oxide/Glass Substrates by RF Plasma-Enhanced Chemical Vapor Deposition Method
• High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
• Evolution of Surface Morphology and Strain in Low-Temperature AlN Grown by Plasma-Assisted Molecular Beam Epitaxy
• Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
• Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
• Spiral Growth of InGaN Nanoscale Islands on GaN
• Step-Flow Metalorganic Vapor Phase Epitaxy of GaN on SiC Substrates
• Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures
• Reliability of GaN Metal Semiconductor Field-Effect Transistor at High Temperature
• Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy
• Increased Size of Open Hexagonally Shaped Pits due to Growth Interruption and Its Influence
• Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW
• InGaN-based blue light-emitting diodes grown on epitaxially laterally overgrown GaN substrates
• Violet InGaN/GaN light emitting diodes grown by molecular beam epitaxy using NH₃

1999

• Metalorganic vapor phase epitaxial growth of GaNAs using tertiarybutylarsine (TBA) anddimethylhydrazine (DMHy)
• Quality improvement of GaInNAs/GaAs quantum well growth by metalorganic chemical vapor deposition using tertiarybutylarsine
• Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
• Analysis of band offset in GaNAs/GaAs by X-ray photoelectron spectroscopy
• Molecular beam epitaxy of GaN under N-rich conditions using NH₃
• Piezoelectric Stark-like ladder in GaN/GaInN/GaN heterostructures
• A 1. 3- mu m GaInNAs laser diode with a lifetime of over 1000 hours
• Large Free-Standing GaN Substrates by Hydride Phase Epitaxy and Laser-Induced Liftoff.
• Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50 Degrees C with a Fundamental Transverse Mode,

2000

• Raman Scattering Studies on Single-crystalline BulkAlN under High Pressures
• Temperature Dependenceof the Phonons of Bulk AlN
• High-quality GaN on AlN multiple intermediate layer with migration enhanced epitaxy by rf-molecular beam epitaxy
• High-quality GaN on AlN multiple intermediate layer with migration enhanced epitaxy by rf-molecular beam epitaxy
• Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy
• High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates

Journal of the Japan Institute of Metals

1992

• High Temperature Strength of SiC AlN Solid Solutions and Composites as Evaluated by Small Punch Tests

Journal of the Korean Physical Society

1995

• Oriented Growth of GaN Films on Sapphire Surface

1997

• Degradation mechanisms in AlGaN/InGaN/GaN light sources

Journal of Luminescence

1971

• Electroluminescence in GaN

1972

• Variation of photoluminescence with carrier concentration in GaN
• GaN bluelight-emitting diodes

1973

• GaN yellow light-emitting diodes
• Luminescence in GaN
• Optical gain in semiconductors
• Luminescence of Be-doped and Li-doped GaN

1976

• New emission line in highly excited GaN

1978

• Cathodoluminescence from gallium nitride implanted with arsenic and phosphorus
• GaN electroluminescent devices: preparation and studies

1979

• Recombination mechanisms in GaN:Zn

1984

• Cathodoluminescent contrast of direct writing patterns in the scanning electron microscope

1988

• Electron beam effects on blue luminescence of zinc-doped GaN

1991

• Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED
• Stimulated emission in MOVPE-grown GaN film

1997

• Broad Emission Band in GaN Epitaxial Layers Grown on 6H-SiC and Sapphire

Journal of Materials Chemistry

1993

• Single Phase Deposition of Alpha Gallium Nitride by a Laser Induced Transport Process

Journal of Materials Science

1970

• Gallium nitride formed by vapour deposition and by conversion from gallium arsenide
• Preparation of single phase gallium nitride from single crystal gallium arsenide
• Synthesis and growth of single crystals of gallium nitride

1978

• Properties of GaN grown on sapphire substrates

1980

• The chemical preparation of gallium nitride layers at low temperatures

1999

• III-V nitrides-important future electronic materials

Journal of Molecular Structure

1974

• Electron diffraction study of the molecular structure of trimethyl gallium

1976

• The molecular geometry of the addition compound Cl₃Ga•NH₃ as studied by electron diffraction

1984

• Isolation of monomeric (CH₃)₃Al in Ar matrixes

1990

• Chemical vapour deposition:A matrix isolation study of precursor compounds and reaction intermediates in the formation of cadmium telluride and gallium nitride

1993

• An ab initio molecular orbital study of the GaH₄ potential energy surface
• On the stability of XH₃YH₃ charge-transfer complexes (X = B, Al, Ga, In and Y = N or P for X = B, Al): an ab initio study

1996

• Monomethyl gallium:prelude to experiment

Journal of Materials Research

1990

• On the nature of the oxygen-related defect in aluminum nitride

1992

• Prospects for device implementation of wide band gap semiconductors

1993

• Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition
• Growth kinetics and characterizations of gallium nitride thin films by remote PECVD

1994

• Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy

1996

• Undoped and doped GaN thin films deposited on high- temperature monocrystalline AlN buffer layers on vicinal and on-axis alpha(6H)-SiC(0001) substrates via organometallic vapor phase epitaxy
• Undoped and doped GaN thin films deposited on high-tepmerature monocrystalline AlN buffer layers on vicinal and on-axis alpha-6H-SiC substrates via organometallic vapor phase epitaxy on alpha-6H-SiC(0001) via organometallic vapor phase epitaxy
• Microstructure, electrical properties, and thermal stability of Al ohmic contacts to n- GaN
• Growth defects in GaN films on sapphire: The probable origin of threading dislocations

2000

• Lattice parameters and thermal expansion of GaN

Journal of the Minerals, Metals and Materials Society

1996

• The dry etching of group III-nitride wide-bandgap semiconductors

Journal of Organometallic Chemistry

1993

• Organometallic Precursors for the Formation of Gallium Nitride by Metal Organic Chemical Vapor Deposition: Thermal Decomposition of Trineopentyl Gallium and of Its Adducts with Ammonia, Dimethylamine and T Butylamine

1976

• A gas electron diffraction study of the molecular structures of trimethylgallium-trimethylamine and trimethylgallium-trimethylphosphine

Journal of the Optical Society of America B

1993

• Linear- and nonlinear-optical properties of GaN thin films
• Absorption and intensity-dependent photoluminescence measurements on CdSe quantum dots: assignment of the first electronic transitions

Journal of Physics and Chemistry of Solids

1960

• Optical Absorption and Recombination Radiation in Semiconductors Due to Transitions Between Hydrogen-Like Acceptor Impurity Levels and the Conduction Band

1967

• The elastic constants of cadmium sulfide between 4. 2-300^oK
• On the preparation, optical properties, and electrical behavior of aluminum nitride

1971

• Band structures of GaN and AlN

1972

• Calculation of Ternary Phase Diagrams of III-V Systems

1973

• Calculation of regular solution interaction parameters in semiconductor solid solutions
• Nonmetallic crystals with high thermal conductivity
• Electrical properties of n-type vapor-grown gallium nitride

1975

• Photoconductivity of Zn-doped GaN

1977

• Thermal conductivity of GaN: 25-360K

1985

• Band structures of semiconductors

1986

• Elastic Properties of Aluminum Nitride

1994

• Ab Initio Study of High Pressure Phase Transition in GaN

1995

• Photoluminescence in doped GaN bulk crystal
• Iii-v Nitrides: Thermodynamics and Crystal Growth at High N-2 Pressure

1997

• Dielectric Properties of Wurtzite and Zincblende Structure GaN

Journal of Physical Chemistry

1962

• Sublimation and decomposition studies on boron nitride and aluminum nitride

1973

• Thermodynamic functions of the gaseous gallium nitride

1990

• Ab initio study on digallane(4), Ga₂H₄

1991

• Ab initio molecular orbital study of the GaAs hydrides

1992

• Chemical quenching of excited-state gallium(²S) atoms by methane in argon matrices
• Matrix isolation study of the reactions of trimethylaluminum with ammonia

1994

• Observed and calculated Raman spectra of the Ga₂H₆ and Ga₂D₆ molecules
• Density functional study of diborane, dialane and digallane
• Aluminum-nitrogen multiple bonds in small AlNH molecules: Structures and vibrational frequencies of AlNH₂ , AlNH₃ and AlNH₄
• Ab initio molecular orbital study of the strengths of the gallium-carbon bonds in Ga(CH₃)_n , n = 1−3

1995

• Elementary gas phase processes in the MOVPE of GaAs: An ab initio molecular orbital study

Journal of Phase Equilibria

1992

• TerQuat: Approximate Prediction of Ternary and Quaternary Phase Diagrams comprising Stoichiometric Phases

Journal of Physics

1984

• Hydrogen atoms in arbitrary magnetic fields: I. Energy levels and wavefunctions

1997

• Brillouin scattering study of gallium nitride: elastic stiffness constants

Journal of Physics C-Condensed Matter

1972

• The band structure of GaN

1975

• Many-body forces in solids - elastic-constants of diamond-type crystals

1978

• Growth and properties of Ga _xAl _1-xN compounds

1979

• Momentum-space formalism for the total energy of solids

1982

• Photoluminescence of GaN epitaxial layers

1986

• Effective-mass states for prolate and oblate ellipsoid bands

1993

• Structure and Static Properties of Indium Nitride at Low and Moderate Pressures
• Band Structures and Pressure Dependence of the Band Gaps of GaN

1994

• An Ab Initio Pseudopotential Calculation of Ground State and Excited State Properties of Gallium Nitride
• Cation Dependence of the Electronic Structure of Iii-v Nitrides

1996

• Band line-ups and band-gap behaviour of new-type superlattices (3C-BN)/(2H-BN), (3C-GaN)/(2H-GaN) and (3C-SiC)/(2H-SiC)

1997

• Brillouin scattering study of gallium nitride: elastic stiffness constants

Journal of Physics D-Applied Physics

1982

• Characterization of aluminum nitride layers formed directly by 700-800 keV ¹⁵N⁺₂ implantation into aluminum

1995

• Lattice Constants, Thermal Expansion and Compressibility of Gallium Nitride
• The barrier height and interface effect of a Au-n-Gan Schottky diode

1996

• Characterization of III-V semiconductor interfaces by Z-contrast imaging, EELS and CBED

1998

• Growth and applications of Group III-nitrides

Journal de Physique

1974

• Anharmonicity in several-polar-mode crystals: adjusting phonon selfenergy and LO and TO modes in Al₂O₃ and TiO₂ to fit infrared reflectivity

1984

• Application of Cesium Primary Beam to the Characterisation of III-V Semicoductors by SIMS

Journal of the Physical Society of Japan

1973

• Laser excited emission of couprous halides

1974

• Luminescence of high density excitons in CdS, CdSe and ZnSe in the 4.2-90K temperature range

Journal of Raman Spectroscopy

1981

• Spectra and structure of gallium compounds. V. Infrared and Raman spectra of gaseous, liquid and solid trimethylgallium

1984

• Raman and infrared spectra and normal coordinate analysis of the molecular adducts H₃NGaX₃ and H₃PGaX₃ (X = Cl or Br)

1996

• Anion-related differences in phonons of (GaX)_N(Ga_1-xAl_xN)_N(001) superlattices (X = As, N)

Journal of Solid State Chemistry

1984

• The Ternary System Titanium-Aluminium-Nitrogen

1989

• Structural Classification of RAO₃(MO)_n Compounds (R = Sc, In, Y or Lanthanides; A = Fe(III), Ga, or Al;Al = Divalent Cation; n = 1-11)

Pisma V Zhurnal Tekhnicheskoi Fiziki

1993

• Preparation of Tungsten Nitride Films on Gallium Arsenide and Study of Their Thermostability

Journal of Vacuum Science and Technology

1969

• Dielectric properties of reactively sputtered films of aluminum nitride
• Preparation and structural properties of GaN thin films
• Structural, optical, and dielectric properties of reactively sputtered films in the system AlN-BN

1979

• Reactive molecular beam epitaxy of aluminum nitride

Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films

1983

• The dependence of aluminum nitride film crystallography on sputtering plasma composition

1985

• Structural analysis of Si(111)-7x7 by UHV-transmission electron diffraction and microscopy

1987

• Analysis of indium nitride surface oxidation

1988

• Growth of Al and Al nitride films in N₂-Ne and N₂-(Ne+Ar) discharges: construction of a ternary phase diagram
• The effects of oxygen contamination on the properties of reactively sputtered indium nitride films

1989

• Growth of cubic phase gallium nitride by modified molecular-beam epitaxy Growth of cubic phase gallium nitride

1990

• Determination of H, C, N and O in Indium Phosphide by Secondary Ion Mass Spectrometry

1992

• Reactive N⁺₂ ion bombardment of GaAs^110~: A method for GaN thin film growth Reactive N⁺₂ ion bombardment of GaAs^110~

1993

• Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy Dry and wet etching characteristics of InN, AlN, and GaN
• Photoassisted growth of gallium nitride by gas source molecular beam epitaxy Photoassisted growth of gallium nitride
• Real Time Stress Measurements and Elastic Constant of Aluminum Nitride Thin Films on Si(111)
• Transparent and Conductive GaN thin films prepared by an ECR plasma MOCVD method
• Nitridation of GaAs(110) using energetic N⁺ and N⁺₂ ion beams Nitridation of GaAs(110)
• Growth of III-V materials by metalorganic molecular-beam epitaxy Growth of III-V materials by MOMBE
• Deposition, characterization, and device development in diamond, silicon carbide, and gallium nitride thin films Diamond, silicon carbide, and gallium nitride thin films

1994

• Effect of Stoichiometry on the Phases Present in Boron Nitride Thin Films
• Structural characterization of GaN and GaAs_xN_1-x grown by electron cyclotron resonance-metalorganic molecular beam epitaxy Structural characterization of GaN and GaAs@/I[sub x]N@/I_1-x
• Surface analysis by photoionization at very high laser intensities Surface analysis by photoionization
• Improved quantification in secondary-ion mass spectrometry detecting MCs+ molecular ions

1995

• GaN patterned film synthesis: Carbon depletion by hydrogen atoms produced from NH₃activated by electron impact GaN patterned film synthesis
• Surface analysis at low to ultrahigh vacuum by ion scattering and direct recoil spectroscopy
• Molecular beam epitaxy of GaN(0001) utilizing NH₃ and/or NH⁺_x ions: Growth kinetics and defect structure MBE of GaN(0001) utilizing NH₃ and/or NH⁺_x ions
• Thermal Annealing of the Epitaxial Al/Si(111)7x7 Interface- Al Clustering, Interfacial Reaction, and Al Induced P+ Doping
• Effect of substrate pretreatment on growth of GaN on (0001) sapphire by low pressure metalorganic chemical vapor deposition Effect of substrate pretreatment on growth of GaN
• Nanoscale structures in III-V semiconductors using sidewall masking and high ion density dry etching Nanoscale structures in III-V semiconductors
• Outdiffusion of deuterium from GaN, AlN, and InN Outdiffusion of deuterium
• Growth of In_xGa_1-xN and In_xAl_{1- x}N on GaAs metalorganic molecular beam epitaxy Growth of In_xGa_{1- x}N on GaAs by MOMBE
• InGaN/AlGaN blue-light-emitting diodes InGaN/AlGaN blue LEDs

1996

• Magnetron reactive ion etching of group III-nitride ternary alloys
• High density plasma etching of III- V nitrides.
• Compact electron cyclotron resonance plasma source for molecular beam epitaxy applications
• Low-temperature growth of aluminum nitride thin films on silicon by reactive radio frequency magnetron sputtering
• Analysis of aluminum nitride epitaxial growth by low pressure metal organic chemical vapor deposition
• Chemical vapor deposition of aluminum and gallium nitride thin films from metalorganic precursors CVD of Al and GaN thin films
• Molecular beam epitaxy growth and characterization of GaN and Al_xGa_1-xN on 6H-SiC MBE growth and characterization
• Optical properties of GaN film grown by metalorganic chemical vapor deposition
• Patterning of AlN, InN, and GaN in KOH-based solutions
• Unintentional hydrogenation of GaN and related alloys during processing Unintentional hydrogenation during processing
• Supersonic-jet-assisted growth of GaN and GaAs films Supersonic-jet growth of GaN and GaAs
• Electronic structure of cubic gallium nitride films grown on GaAs Electronic structure of c-GaN films
• Elemental steps in the growth of AlN thin films on NiAl upon thermal decomposition of ammonia
• Silicon-based group IV heterostructures for optoelectronic applications Silicon-based group IV heterostructures
• Low temperature growth of AlN(0001) on Al(111) using hydrazoic acid (HN3)

1997

• Growth of gallium nitride thin films by liquid-target pulsed laser deposition
• High-density plasma etching of compound semiconductors
• Plasma etching of III-nitrides in ICl/Ar and IBr/Ar plasmas
• Rapid thermal processing of III-nitrides
• Comparison of ohmic metallization schemes for InGaAlN

1998

• Wurtzite GaN surface structures studies by scanning tunneling microscopy and reflection high energy electron diffraction
• Etch characteristics of GaN using inductively coupled Cl2/Ar and Cl2/BCl3 plasmas
• Effect of atomic hydrogen on Er luminescence from AlN
• Morphology of nickel and nickel/gold contacts to gallium nitride

1999

• The facet formation of GaN-based device using chemically assisted ion beam etching(CAIBE) with photoresist mask
• Temperature dependence of molecular beam epitaxy of GaN on SiC (0001)
• Characteristics of Inductively Coupled Cl2/BCl3 Plasmas during GaN Etching

2000

• Optimized Structural Properties of Wurtzite GaN on SiC(0001) Grown by Molecular Beam Epitaxy

Journal of Vacuum Science and Technology B

1983

• Epitaxial growth of GaN/AlN heterostructures

1990

• Growth of AlN/GaN layered structures by gas source molecular-beam epitaxy Growth of AlN/GaN layered structures
• Growth of boron nitride films by gas molecular-beam epitaxy Growth of boron nitride films by gas source MBE

1991

• An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Properties of cubic GaN grown on GaAs

1992

• GaN, AlN, and InN: A review
• Growth of AlN on GaAs(110) by reactive molecular beam deposition Growth of AlN on GaAs(110)

1993

• Reactions between molten aluminum and pyrolytic boron nitride crucibles Reactions between molten Al and pBN crucibles
• Comparison of mobility-limiting mechanisms in high-mobilitySi(1-x)Ge(x) heterostructures
• Electron-induced nitridation of GaAs(100) with ammonia Electron-induced nitridation of GaAs(100)

1994

• Growth of group III nitrides on Si(111) by plasma- assisted molecular beam epitaxy Growth of group III nitrides on Si(111)
• Theoretical study of the band offsets at GaN/AlN interfaces Theoretical study of the band offsets at GaN/AlN interfaces

1995

• Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates GaN films on GaN/SiC substrates
• Electron microscopy characterization of GaN films grown by molecular-beam epitaxy on sapphire and SiC Electron microscopy characterization of GaN films
• Auger electron spectroscopy, x-ray diffraction, and scanning electron microscopy of InN, GaN, and Ga(AsN) films on GaP and GaAs(001) substrates InN, GaN, and Ga(AsN) films on GaP and GaAs(001) substrates
• Electrical characterization of single barrier GaAs/GaN/GaAs heterostructures Single barrier GaAs/GaN/GaAs heterostructures
• Investigation of n- and p-type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactor Investigation of n- and p-type doping
• Implant isolation of In_xAl_1-xN and In_xGa_1-xN Implant isolation of In[sub x]Al_1-xN and In_xGa_1-xN
• High rate electron cyclotron resonance etching of GaN, InN, and AlN High rate electron cyclotron resonance
• Gold nanocomposites Gold nanocomposites
• Growth and characterization of GaN on sapphire (0001) using plasma-assisted ionized source beam epitaxy Growth and characterization of GaN on sapphire (0001)
• Influence of substrate electrical bias on the growth of GaN in plasma-assisted epitaxy Influence of substrate electrical bias
• Approach to obtain high quality GaN on Si and SiC-on- silicon-on-insulator compliant substrate by molecular-beam epitaxy Approach to obtain high quality GaN

1996

• Investigation of GaN deposition on Si, Al₂O₃, and GaAs using in situ mass spectroscopy of recoiled ions and reflection high-energy electron diffraction Investigation of GaN deposition
• High-quality GaN and AlN grown by gas-source molecular beam epitaxy using ammonia as the nitrogen source
• Molecular beam epitaxy growth and properties of GaN, Al_xGa_1-xN, and AlN on GaN/SiC substrates MBE growth and properties of GaN, Al_xGa_1-xN, and AlN
• Molecular beam epitaxy growth kinetics for group III nitrides
• Electronic properties of ideal and interface-modifiedmetal-semiconductor interfaces
• Microstructural stability of ohmic contacts to In_xGa_1-xN
• Tensile strain relaxation in GaN_xP_1-x (x 0.1) grown by chemical beam epitaxy
• Investigation of GaN deposition on Si, Al₂0₃, and GaAs using in situ mass spectroscopy of recoiled ions and reflection high-energy electron diffraction
• High temperature surface degradation of III–V nitrides
• Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition
• Thermal stability of W, WSi_x , and Ti/Al ohmic contacts to InGaN, InN, and InAlN
• Etching processes for fabrication of GaN/InGaN/AlN microdisk laser structures

1997

• Two-dimensional electron gas in AlGaN/GaN heterostructures
• Microstructure, vibrational and electronic properties of GaN grown by molecular beam epitaxy on Al₂O₃(0001) and 6H-SiC(0001)
• Raman monitoring of molecular beam epitaxial growth of GaN on GaAs (100) and Si (111)
• Nitridation of the GaAs (001) surface using atomic nitrogen
• Optical transitions in InGaN/AlGaN single quantum wells
• Theory of interfaces and surfaces in wide-gap nitrides
• Growth and characterization of light emitting ZnS/GaN heterostructures
• Electron cyclotron resonance etching of III–V nitrides in IBr/Ar plasmas
• Surface roughness of nitrided (0001) Al₂O₃ and AlN epilayers grown on (0001) Al₂O₃ by reactive molecular beam epitaxy

1998

• High mobility AlGaN/GaN heterostructures grown by gas-source molecular beam
• Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate.
• Reconstructions of GaN(0001) and (0001bar) Surfaces: Ga-rich Metallic Structures
• Exciton localization in InGaN quantum well devices
• Study of the mechanisms of GaN film growth on GaAs surfaces by thermal and plasma nitridation

1999

• Effect of Au overlayer on Ni contacts to p-type GaN

2000

• Theoretical study of GaN molecular beam epitaxy growth using ammonia: A rate equation approach
• ZnO/GaN heterointerfaces and ZnO films grown by plasma-assisted molecular beam epitaxy on (0001) GaN/Al2O3
• Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy

Kristall Technik

1974

• Influence of growth temperature and substrate material on the properties of epitaxial GaN

1975

• Zur Epitaxie von Galliumnitrid auf nichtstöchiometrischem Spinell im System GaCl/NH₃/He

1977

• Epitaxial growth and electrical properties of GaN-AlN solid solutions
• Preparation of InN epitaxial layers in InCl₃-NH₃ system

Laser Physics

1996

• Laser Cathode-Ray Tubes Using Multilayer Heterostructures

Laser Focus World

1993

• Semiconductors Gallium Nitride: Will It Impact Semiconductor Technology

1997

• Luminescent polymers promise novel lasers

Materials Chemistry and Physics

1996

• Thermal expansion and lattice parameters of group IV semiconductors

Microelectronics Journal

1994

• Deposition of III-N Thin Films by Molecular Beam Epitaxy
• Growth of InxGa(1-x)N compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting diodes

Mineralogical Journal