2000
- Renaissance and Progress in Nitride Semiconductors
- HVPE/MOMBE Hybrid Growth of High Quality Hexagonal GaN on SiO2 Substrates with an AlN Buffer Layer
- Polarity of GaN Grown on (001) ß-LiGaO2
- Synthesis and Properties of HVPE Nitride Substrates
- HVPE Regrowth on Free-Standing GaN Quasi-Substrates
- Epitaxial Lateral Overgrowth of GaN on Si Substrates by Hydride Vapor Phase Epitaxy
- Time-Modulated Growth of Thick GaN by Hydride Vapor Phase Epitaxy : Suppression of Dislocations
- The Catalytic Growth of GaN Powders
- Structural and Optical Characterization of Thick GaN Films Grown by Direct Reaction of Ga and NH3
- Thermodynamic Analysis and In Situ Gravimetric Monitoring of GaN Decomposition
- Influence of Growth Temperature on the Crystalline Quality of Hexagonal GaN Layer on GaAs (111)A by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy
- Effect of High Temperature GaN Buffer Layer on the Growth of Thick GaN by Hydride Vapor Phase Epitaxy
- Cathodoluminescence Characterization of Thick GaN Films Grown by HVPE
- The Lateral Growth of GaN by Sublimation Method
- Dynamics and Polarization of Group-III Nitrides
- Bowing of GaN Substrates by Hydride Vapor Phase Epitaxy
- MOCVD Growth of Cubic GaN: Materials and Devices
- Influence of Si Doping on Optical Properties of Cubic GaN Grown on GaAs (001) Substrates by Metalorganic Vapor Phase Epitaxy
- Cubic AlGaN/GaN and GaN/InGaN Heterostructures:Effects of p-type Doping
- Strain Relaxation Mechanisms in Hexagonal and Cubic Nitride Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
- Vapor Phase Epitaxy of Cubic Gallium Nitride Using a Single Source
- Effect of an Intermediate Layer on Cubic GaN Grown on GaAs (100): Substrate Protection and Strain Relaxation
- Detection and Analysis of Hexagonal Phase Generation in Selective-Area Growth of Cubic GaN by Metalorganic Vapor Phase Epitaxy
- Growth and Characterization of Cubic InGaN/GaN Multiple Quantum Wells on 3C-SiC by RF-MBE
- Regional Density Functional Theory for Parasitic Reaction in III-V Nitride Semiconductor Crystal Growth
- Complex Flow and Gas Phase Chemical Reactions in GaN MOVPE Reactor
- Large Lateral Growth Rate in GaN Grown Directly on Al2O3(0001) Substrate by Two-Flow Metalorganic Vapor Phase Epitaxy
- Optical Properties of GaN Epitaxial Layers Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy Under Various Growth Conditions
- Growth of AlGaN/GaN Heterostructure at Various NH3 Flows and Reactor Pressures and Their 2DEG Transport Properties
- MOVPE Growth of 4-inch GaN Epitaxial Wafers for FETs on a-face and c-face Sapphire Substrates
- MOVPE Growth and Optical Properties of GaN/AlGaN Superlattices as Pseudo-Ternary Alloys
- Effect of Strain Relaxation and Screening on Intersubband Transitions in GaN/AlGaN Multiple Quantum Wells
- Effect of Intermediated Layers in Al0.65Ga0.35N/GaN Multiple Quantum Wells
- A New Approach to Grow GaN by Low-Pressure MOCVD Using a Three Steps Tecnique
- Polarization Control in Nitride-Based Semiconductor
- Effect of Carrier Gas on the Properties of MOVPE-Grown GaN and GaN/AlGaN MQWs: a Comparison of H2 to N2 as a Carrier Gas
- The Influence of the Low-Temperature Buffer-Layer on Substrate-Induced Biaxial Stress in a GaN Film on a Sapphire Substrate
- Improved 250nm UV PL Spectra from BAlGaN/AlN MQW on 6H-SiC Substrate by MOVPE using TEB
- Coaxial Impact Collision Ion Scattering Spectroscopy (CAICISS) Analysis for the Polarity Conversion of GaN Films Grown on Nitrided Sapphire Substrates
- Reduction of Threading Dislocations in RF-MBE Grown Polarity Controlled GaN by AlN Multiple Interlayers
- Optimization of the Electron Mobilities in GaN Grown by Plasma-Assisted Molecular Beam Epitaxy
- Optical and Electrical Properties of GaN Films with Ga-Polarity Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
- Optical Emission from Surface and Buried AlGaN/GaN MQWs Grown by MBE on 6H-SiC
- Molecular Beam Epitaxy of GaN (0001) Under Hydrogen
- Resolved Band-Edge Luminescence of AlN on Different Substrates
- An Indium Surfactant Effect in Cubic GaN RF-MBE Growth
- Annealing Effect of Low Temperature Growth of InN Films by RF-MBE
- MBE growth of InN on Si toward Hole-Barrier Structure in Si Devices
- Crystal Growth of AlN on Al/Sapphire Interdegital Transducer at the Resonance Point of Nitrogen-Electron Cyclotron Plasma
- Structural Analysis of AlN films grown on SiC substrate by RF-MBE and RF-MEE
- Fabrication of Conductive AlN Films by Pulsed Laser Deposition
- Influence of the Ion Irradiation During Low-Energy Nitrogen Ion Assisted Deposition of Wurtzitic Gallium Nitride Films on Sapphire
- Gas-Source MBE Growth of GaN Films Using Tertiarybutylhydrazine as a Nitrogen Precursor
- The Effects of Atomic Hydrogen on the III-Nitride Growth Dynamics in RF-Molecular Beam Epitaxy
- Growth and Characterization of GaN Epilayer on Sapphire Substrate by Ammonia Gas Source Molecular Beam Epitaxy
- InGaN Film Growth on Polarity Controlled GaN Buffer Layer by Ammonia-MBE
- Morphology Dependent Growth Kinetics of Ga-polar GaN(0001)
- Comparison of Dislocation Properties in GaN Epilayer Grown by MOCVD with MBE
- Advances in III-Nitride Growth by Ammonia-MBE
- Flow Modulation Epitaxy of InN/GaN Heterostructures; Towards InN Based HEMTs
- Pulsed MOCVD Technique for Lateral Overgrowth of GaN on SiC with Conducting Buffer Layers
- Influence of Growth Interruptions and Gas Ambient on Optical and Structural Properties of InGaN/GaN Multilayer Structures
- Epitaxial Growth of AlN on Sapphire by ECR Plasma Assisted MOCVD under Mirror Field Conditions
- Observation of the Early Stages and 3D-2D Transition of MOCVD Grown GaN with LT-GaN Buffer Layer
- GaN Thin Films Grown on Hydrogen Plasma Cleaned Sapphire Substrates by Plasma Assisted MOCVD
- AlGaN Films and AlGaN/GaN Superlattices Prepared by Hot Wall Epitaxy
- GaN Epitaxial Growth Using RF Pulsed Laser Deposition (PLD) Method with Molten Ga Target
- GaN Thin Film Grown by Reactive Close-Spaced Method at 750oC
- Pendeo-Epitaxial Growth and Characterization of Gallium Nitride and Related Materials
- Crystallographic Structure of FIELO-GaN Films Studied by Scanning Reflection Electron Microscopy
- Measurement and Minimization of Wing Tilt in Laterally Overgrown GaN on a SiO2 Mask
- Cathodoluminescence Microscopy and Micro-Raman Spectroscopy of Growth Domains Formed During Epitaxial Lateral Overgrowth of GaN
- Crystallographic Tilt in Lateral Overgrowth of GaN Epitaxial Layers -Mask Material Dependence-
- Epitaxial Lateral Overgrowth of GaN using Tungsten Nitride (WNx) Mask via MOVPE and Electrical Properties of WNx/GaN Contacts
- Heteroepitaxy and Characterization of GaN with Low Dislocation Density on Periodically Grooved Sapphire Substrate
- Control of Self-Limited (0001) Facet in Selectively Grown GaN Hexagonal Structures with Dot Patterned Mask
- Transmission Electron Microscopy Study of Selective Area Growth of GaN on (111)Si using AlGaN as an Intermediate Layer
- Selective Growth of GaN Microstructures on (111)Facets of a (001)Si Substrate by MOVPE
- Photoluminescence Spectra and Impurity Incorporation in an SAG-ELO GaN by MOVPE
- Growth and Characterization of High Quality GaN Film by Expitaxial Lateral Overgrowth
- Morphological Evolution During Growth of InGaN Laser Diodes on Laterally Overgrown GaN on Sapphire
- High-Quality Laterally Overgrown GaN Layers without Crystallographic Tilting and Voids
- Reduction of Dislocation Density in GaN by Facet Controlled ELO
- Dynamical Process of Mass Transport in GaN
- A Cause of the Crystalline Orientation in Hexagonal GaN Grown on AlAs/GaAs (001)
- Growth Evolution of GaN on GaP (001) Substrate by Metalorganic Vapor Phase Epitaxy
- Growth Rate and Its Limiting Process for Metalorganic Vapor Phase Epitaxial InN
- Significance of the Suppression of Substrate Surface Nitridation for Epitaxial Growth of Wurtzite InN on GaP(111) and InP(111) Substrates
- Marked Substrate-Surface Dependence of In Content Included in High-Temperature Grown InN
- Influences of Inert Nitrogen Molecules, Nitrogen Radical Atoms and Nitrogen Molecular Ions on Growth Process and Crystal Structure of GaN Heteroepitaxial Layers Grown on Si(001) and Si(111) Substrates by Moleclular-Beam Epitaxy Assisted by Electron Cyclotron Resonance
- Heteroepitaxial Growth of GaN on Si Substrate Coated with a Thin Flat SiC Buffer layer
- Epitaxial Growth of AlN on Si(111) by Laser MBE
- The Effects of the Growth Rate along with AlN Nucleation Layer on the Qualities of GaN Epilayers Grown on Si(111) Substrate Using 3C-SiC Intermediate Layer
- Epitaxial Growth of Galium Nitride on (111)GaAs Substrates
- Electrical and Optical Properties of GaN Grown by Radical Beam Epitaxy on the (110) GaAs Surface
- Structural Properties, In Distribution, and Photoluminescence of Multiple InGaN/GaN Quantum Well Structures
- Characteristics of Optical Properties of the Interrupt Growth Method on InGaN/GaN MQW Structures
- Comparison of the Optical Properties in InGaN/GaN Quantum Well Structures Grown on (0001) and (1120) Sapphire Substrates
- Evidence of Localized States in InGaN/GaN Double Heterostructures
- Indium Aggregation and Phase Seperation in InGaN/GaN Quantum Wells Studied with High Resolution Transmission Electron Microscopy
- The Effects of Thermal Annealing Treatments on InGaN/GaN Quantum Well Structures
- GaN and InGaN Quantum Dots Grown by MBE: from UV to Red Light Emission
- Growth and Physics of Nitride-Based Quantum Dots for Optelectronics Applications
- Optical Properties of Self-Organized GaN Nanostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
- Growth of Self-Organized GaN Nanostructures on Al2O3 (0001) by RF MBE
- High-Density InGaN Quantum Dots Fabricated by Selective MOCVD Growth
- Theory of Strain, Built-in Electric Fields and Carrier States in Self-Organised GaN/AlN Quantum Dots
- Role of In on the Formation of Wire Structures on GaNAs Surfaces Grown by MOMBE
- Nitride-Rich GaN1-xPx Growth by Photo-Assisted Metalorganic Chemical Vapor Deposition and Its Properties for a Light-Emitting Diode
- CBE Growth and Characterization of InGaAsN/InP Quantum Well Structures using NH3
- Mechanism for Photoluminescence in InAsN/InGaAs Single Quantum Well
- Electronic Structures of GaNP and InNAs Ordered alloys Calculated by the Pseudopotential Method
- Envelope Function Calculations in GaAsN-GaN Quantum wells
- Beryllium-Implanted Gallium Nitride: Electrical and Structural Analysis
- Magnesium and Beryllium Doping During RF-Plasma MBE Growth of GaN
- Geometrical Magneto Resistance Measurement of Vertical Conductivity in GaN and Comparison With Lateral Transport
- Detection and Identification of Deep Levels in n-GaN
- Long-Term Photocapacitance Decay Behavior in Undoped GaN
- Correlation Between Deep Defects and Persistent Photoconductivity in Undoped GaN and AlGaN Layers
- TEM Study on Pit-Formation on the End of Threading Dislocations in MOVPE-GaInN/GaN
- Spatially Resolved Spectroscopy at Micro-Cracks in AlGaN Layers
- Cracking of GaN on Sapphire from Induced Non-Uniformity in Residual Stress
- Resonant Photoemission Study of Eu Doped GaN
- Photoluminescence Properties of Eu-Doped GaN by Ion Implantation
- Concentration Quenching of Eu Related Luminescence from Eu-doped GaN Studied by EXAFS Analysis
- Growth and Characterization of Tb Doped GaN
- Luminescence Properties of Er implanted n-GaN
- Direct Observation of Defect Structures in Ga-Polar and N-Polar GaN Epilayers by Cross-Sectional Cathodoliminescence
- Blue Photoluminescence Activated by Surface States in GaN
- Excitation Spectroscopy and Level Assignment in Piezoelectric Ga1-xInxN/GaN Quantum Wells
- Free Carrier Screening of Quantum-Confined Stark Effect Affecting on Luminescence Energy Shift and Carrier Lifetime in InGaN Quantum Wells
- Influence of Internal Electric Fields on the Carrier Dynamics in GaN/(Al,Ga)N Multiple Quantum Wells with Different Orientation and Strain State
- The Investigation on the Emission Mechanism of InGaN/GaN Quantum Well Structure
- Spectroscopic Studies in InGaN Single-Quantum-Well Amber Light-Emitting Diodes
- Temperature Dependent Carrier Dynamics in GaInN/GaN Multiple Quantum Wells with Varying In Composition
- Non-Radiative Nature of Threading Dislocations in GaN Grown by Metal-Organic Chemical Vapor Deposition
- Nonradiative Recombination Processes in GaN-Based Semiconductors Probed by the Transient Grating Method
- Distribution of Below-Gap States in GaN-based Quantum Wells Revealed by Two-Wavelength Excited Photoluminescence
- Photoreflectance Spectra of Excitonic Polaritons in Wurtzite GaN
- Motional Narrowing and Rayleigh Scattering of Exciton-Polaritons in GaN/AlGaN Multiple Quantum Wells
- Gas Source Molecular Beam Epitaxy Growth of Polycrystalline GaN on Metal Substrate and the Observation of Strong Photoluminescence Emision
- Structural and Optical Characteristics of GaInN Multiple Quantum Wells Grown by Raised-Pressure Metalorganic Chemical Vapor Deposition
- Optical Properties of AlInGaN Alloys and AlInGaN/InGaN Multiple Quantum Wells
- Optical Properties of (Al)GaN-Based Structures for Near- and Deep-Ultraviolet Emitters
- Excitons in GaN/GaAlN Quantum Wells: Optical Pumping and Temperature Effect
- Correlation between Optical Emission and Disordering of Indium in InxGa1-xN Single Quantum Wells Analyzed by Coaxial Impact Collision Ion Scattering Spectroscopy
- Magneto-Spectroscopy of Donor-Bound Excitons in Homoepitaxial GaN
- Ground and Excited Excitonic Resonances in Heteroepitaxial GaN Layers: A Magnetooptical Study
- High-Resolution Polariton Spectra of Homoepitaxial GaN: Temperature Dependence
- Near-Band-Edge Recombination in GaN, GaN:Mg and GaN:Si between 12 and 650 K
- Polarized Photoluminescence Spectroscopy of HVPE GaN with Different Dislocation Structures
- Recombination Dynamics in GaN and InGaN/GaN Multiple Quantum Wells on Air-Bridged Lateral Epitaxial Grown GaN Layers
- Photoluminescence from High-Quality InGaN Multiple Quantum Wells Grown by Metal Organic Chemical Vapor Deposition
- Photoluminescence Excitation Spectrum of Undoped and Zn Doped InGaN Microcrystals
- Effects in Carrier Dynamics of Isoelectronic In Doped in GaN Films Grown by Metaloganic Vapor Phase Epitaxy
- Mesoscopic Capacitor Effect in GaN/AlGaN Quantum Wells
- Optical Characterization for Indium Segregation Studies in InGaN/GaN Quantum Wells
- Time-Resolved Photoluminescence of InGaN/GaN MQW Structures
- Electrical Chracterization of Ion Implantation Induced Defect States in Gallium Nitride
- The Electronic Structure and Optical Properties of Phosphorus Implanted GaN Films
- Electrical and Optical Properties of Si- and Mg-Doped Polycrystalline GaN on Quartz Glass Substrate
- Indium Silicon Co-Doping in AlGaN/GaN Multiple Quantum Wells
- Effect of Impurity Doping on the Mechanical Properties of AlxGa1-xN Ternary Alloys
- GaN-Based Electroluminescence Device with AC Operation Using GaN Powder
- Reflection Spectra of Al1-xGaxN
- Temperature Dependence of Aluminum Nitride Reflectance Spectra
- Observation of Second Harmonic Emission and Three-Photon Fluorescence from Gallium-Nitride
- Raman Scattering in Hexagonal AlxGa1-xN Alloys and Optical Modes Behavior
- Overdamped Electron Plasma Oscillations in Cubic AlxGa1-xN Layers Observed by Raman Scattering Spectroscopy
- Raman Studies of Hexagonal GaN/AlxGa1-xN Multilayered Structures
- Strain Effects on Structural, Dielectric, and Lattice-Dynamical Properties of Short-Period GaN/AlN Superlattices
- Raman Scattering Characterization of Annealed GaNxAs1-x Layers
- Optical Transitions in GaNAs/GaAs Single Quantum Well
- Empirical Interatomic Potential Calculation for Compositional Instability of III-V Nitride Alloys in Lattice Mismatch Systems
- Theoretical Analysis of Multinary Nitride Semiconductors by Density Functional Theory
- Influence of Biaxial Strain on Thermodynamic, Structural and Electronic Properties of InxGa1-xN Alloys
- Electronic Structure Calculation of AlN, AlGaN2 and GaN in the Wurtzite Structure
- Nonuniform Contact Potential Profile of AlGaN/GaN on SiC Measured by Kelvin Probe Force Microscopy
- Thermal Stability of Pd/Al0.11Ga0.89N Schottky Diodes
- Local Vibrational Modes in Mg-doped GaN as a Probe of Activation and Deactivation of Acceptors
- Micro-Raman-Photoluminescence Study of Mg-doped GaN Materials Prepared by Metal Organic Chemical Vapor Deposition
- Photoluminescence of Mg-Diffused GaN Epilayer
- Inhomogeneous Spatial Distribution of Acceptor-Related Recombination Centers in Mg-Doped GaN
- Temperature Dependence of Magnesium Related Optical Transitions in GaN:Mg
- Selectively Enhanced Mg Incorporation into AlGaN Barrier Layer of Strained Layer SuperLattice
- Activation of Mg-Doped GaN by Thermal Annealing in Oxidizing Atmospheres
- Modulation Magnesium-Doping in AlGaN/GaN Superlattices
- Temperature-Dependent Hall Study on p-Type GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition
- Characterization of Carbon Doped GaN Films Grown by Molecular Beam Epitaxy
- Acceptor Activation of Mg-Doped GaN by Microwave Treatment
- Novel Methods of p-type Activation in GaN:Mg
- ICP Etching for the Fabrication of AlGaInN VCSELs with Dielectric Mirrors
- Bonding of GaN with Si using Selenium Sulphide (SeS2) and Laser Lift-Off
- The Optical and Electrical Characteristics of CO2 Laser Treated Mg-Doped GaN Film
- Effect of Nitrogen Plasma Treatment on Mg-Doped GaN and Blue LED
- Evaluation of Dislocation Densities in n-GaN Films by Photoassisted Anodic Etching
- Photoassisted Anodic Etching of n-InN Films in an AGW Electrolyte
- Photoluminescence and Photoconductivity Studies of Reactive-Ion-Etched GaN on SiC Substrates
- Tree-like Features Formed on Photoelectrochemically Etched n-GaN Surfaces: Revelation of Threading Dislocations in GaN
- In-Situ Dry Etch Monitoring for GaN/AlGaN Based Device Structures
- Electrical Properties of ICP Plasma-Damaged n-GaN
- Ti-Based Ohmic Contacts to p-type GaN/AlxGa1-xN Superlattices
- Transparent Low Resistance Ohmic Contact to p-type GaN and its Application to GaN Based Light Emitting Diodes
- Low p-Type Contact Resistance Using Mg-Doped InGaN and InGaN/GaN Superlattices
- Influence of Inhomogeneous Barrier on I-V Characteristics of Metal/GaN Schottky Diodes
- Formation of Low-Resistance, Thermally Stable, and Highly Transparent Pt-Based Ohmic Contacts to Surface-Treated p-GaN
- The Role of Annealing Ambient on the Formation of Ni/Au Ohmic Contacts to GaN LEDs
- Electrical Properties of Pd-Based Ohmic Contact to p-GaN with Au Diffusion Barrier
- Effect of Hydrogen Storage Materials on Ohmic Contact to p-GaN
- Electrical Properties and Reliabilities of Pt, PtAu, NiAu, and TaTi Ohmic Contact Materials for p-GaN
- The Effect of Surface Treatment on the Interfacial Reaction between Pd and p-GaN
- Large Schottky Barriers and Memory Capability for Ni Contacts Formed on Low Mg-Doped p-GaN
- High-Efficiency GaN/AlxGa1-xN Multi-Quantum Well Light Emitter Grown on Low-Dislocation Density AlxGa1-xN
- 339 nm Deep-UV Emission from Al0.13Ga0.87N/Al0.10Ga0.90N Double Heterostructure Light-Emitting Diode on Sapphire Substrate
- White Light Sources Based on InGaN
- InGaN/GaN Blue Light Emitter Grown on Si(111) Using an AlAs Seed Layer
- Quaternary AlInGaN-InGaN MQW Based Vertically Conducting Light Emitting Diodes on SiC
- Resonant Cavity Blue and Near Ultraviolet Light Emitting Devices
- Improved Electrical Property of InGaN/GaN Light-Emitting Diodes by Using a Mg-Doped AlGaN/GaN Superlattices
- Role of Nanostructures in the Radiative Recombination Process of InGaN-Based Light-Emitting-Diodes
- Electroluminescence from p-GaN/n-InGaN MQW Hexagonal Microprism Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy
- Fabrication of Light Emitting Diodes with GaInN Multi-Quantum Wells on Si (111) Substrate by MOCVD
- Short Period Alloy Superlattice for Transparent Conductive Layer of UV-Emitter
- Influence of the Thick GaN Buffer Growth Conditions on the Electroluminescence Properties of GaN/InGaN Multilayer Heterostructures
- GaN-Based High Power Blue-Violet Laser Diodes
- Fabrication of InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates by Laser Lift-Off
- RT-CW Operation of GaN-Based Laser Diodes Improved by GaN/GaInN Optical Guiding Layers
- Novel Design Proposed for Nitride VCSELs
- Analysis of Lateral Transverse Modes of Ridge-Geometry AlGaInN Laser Diodes
- On the Feasibility of Fundamental-Mode Operation in Unstable-Resonator InGaN Lasers
- Present Status of InGaN-Based Light-Emitting Diodes and Laser Diodes
- Advances in Blue Laser Diode Development for High Resolution Printing
- GaN-Based Resonant Cavity-Enhanced UV-Photodetectors
- Solar-Blind AlGaN PIN Hetero Junction Photodiode
- UV Solar Cells Based on Mg-Doped Hydrogenated GaN on Glass Substrates grown at 380oC
- GaN Thin Film Gas Sensors
- Indium-Doping Enhanced Two-Dimensional-Electron-Gas Performance in AlGaN/GaN Heterostructures
- Fabrication of AlGaN/GaN HEMTs with Buried p-Layers
- Comparison of Ion Implantation Approaches in the Fabrication of AlGaN/GaN HFETs: Classical vs. Through the Gate Metal
- Properties of As-Grown, Chemically Treated and Thermally Oxidized Surfaces of AlGaN/GaN Heterostructure
- Effect of Gate Leakage Current on Noise in AlGaN/GaN HFETs
- Technology and Performance of AlGaN/GaN HEMTs Fabricated on 2-Inch Epitaxy for Microwave Power Applications
- Large Periphery AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates
- Theoretical Comparison of AlxGa1-xN/GaN (x=0.2 and 0.4) HJFETs Based on Full Band Monte Carlo Simulation
- Electron Transport Properties in AlGaN/GaN Heterostructure Field Effect Transistors at High Electron Densities
- Fabrication of a Heterostructure Field-Effect Transistor Using AlGaN/GaN
- Characterization of Short Channel AlGaN/GaN HEMTs-Breakdown Voltage and Gate Recess
- A New KOH-Based UV Assisted Wet Etching Technique and its Application to AlGaN/GaN HFET Fabrication and Characterization
- InGaN/GaN Double Heterojunction Bipolar Transistor Grown by Metalorganic Vapor Phase Epitaxy
- Optical Property of an AlGaN/GaN Hetero-Bipolar-Phototransistor
- Band Offsets and Current Transport in GaN Based HBTs
- Surface Acoustic Wave Filters at 2.4 GHz Using AlN Deposited on Off-Angle R-Plane Sapphire Substrates by MOCVD
- GaN Thin Film SAW Filter with High Velocity and Low Insertion Loss Grown by MOCVD
- UV Photoemission and Field Emission Study of AlGaN/GaN Emitters
- Heavily Si-Doped AlN Electron Field Emitters
- Prospects for Gallium Nitride Based Electronic Devices
last updated Thursday, February 14, 2002 1:45:39 PM.
© 2001 The Materials Research Society