wetzel-bookarticle-1999-239

Data for reference wetzel-bookarticle-1999-239

Optical Properties of GaInN/GaN Heterostructures and Quantum Wells

C Wetzel, T Takeuchi, S Nitta, S Yamaguchi, H Amano, I Akasaki

published by , 239 (1999).

Photoreflection and photoluminescence spectroscopies have been used to identify details of the electronic bandstructure in GaInN/GaN strained heterostructures and multiple quantum well structures. Franz-Keldysh oscillations reveal large piezoelectric fields of 240 kV/cm (x=0.079, thin film) and 0.65 MV/cm (x=0.187). Spatially resolved luminescence shows a very narrow distribution DE =28 meV of the bandgap energy (x=0.187). A value for the strain dependent variation of the polarization dPz/dezz=0.3 C/m^2 is found experimentally.

Contributed by Christian Wetzel from 202.11.0.6 on Tuesday, November 23, 1999 11:59:02 PM

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