Data for reference eckey-bookarticle-1996-2861

Optical properties of highly excited GaN

L. Eckey, J. Holst, A. Hoffmann, I. Broser, H. Amano, I. Akasaki, T. Detchprohm, K. Hiramatsu, in 23rd International Conference on the Physics of Semiconductors, edited by:, M. Scheffler, R. Zimmermann

published by World Scientific(Singapore), 2861 (1996).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN

Contributed by L. Eckey from server05.zrz.tu-berlin.de. on Wednesday, January 8, 1997 9:36:14 AM

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