Data for reference vermaut-bookarticle-1995-289

Microstructure of GaN epitaxially grown on hydrogen plasma cleaned 6H-SiC substrates

P Vermaut, P Ruterana, G Nouet, A Salvador, A Botchkarev, B Sverdlov, H Morkoç, in Microscopy of semiconducting Materials 1995 Inst. Phys. Conf. Ser. No 146, edited by:, AG Cullis, AE Staton-Bevan

published by Institute of Physics Publishing(Bristol and philadelphia), 289 (1995).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC

Contributed by Philippe Vermaut from 192.93.101.126 on Tuesday, June 11, 1996 8:31:23 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, May 4, 2005 11:11:53 AM.
© 1998 The Materials Research Society