Data for reference thompson-bookarticle-1995-266

The Growth of Doped Epitaxial GaN Films on Sapphire Substrates in a Production Scale Multi-Wafer Rotating Disc MOCVD System

A. G. Thompson, C. Yuan, A. Gurary, R. A. Stall, N. E. Schumaker

published by World Scientific Publishing Co. Pte. Ltd, 266 (1995).

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This item is cited by the following items in the database:

  1. The Growth of InGaN/(Al)GaN Quantum Well Structures in a Multi-Wafer High Speed Rotating Disk Reactor

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