Data for reference sizov-bookarticle-1995-427

Reactive Ion Etching of Silicon Carbide with Fluorine-Containing Plasmas

VE Sizov, KV Vassilevski, in Wide Bandgap Electronic Materials, NATO ASI series, 3. High Technology, vol.1, edited by:, MA Prelas, P Gielisse, G Popovici, BV Spitsyn, T Stacy

published by Kluwer Academic Publishers(Dordrecht), 427 (1995).

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This item is cited by the following items in the database:

  1. Physical Properties of Bulk GaN Crystals Grown by HVPE

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Tuesday, June 10, 1997 1:09:00 PM

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