Data for reference rouviere-bookarticle-1995-285

TEM characterisation of GaN layers grown by MOCVD on Al2O3(0001)

JL Rouviere, M Arlery, A Bourret, R Niebuhr, K Bachem, in Microscopy of semiconducting materials 1995 Inst. Phys. Conf. Ser. No 146, edited by:, AG Cullis, AE Staton-Bevan

published by Institute of Physics Publishing(Bristol and Philedelphia), 285 (1995).

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This item is cited by the following items in the database:

  1. Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC

Contributed by Philippe Vermaut from 192.93.101.126 on Tuesday, June 11, 1996 9:31:26 AM

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