Data for reference rastegaeva-bookarticle-1995-50

Ohmic Contacts to 6H-SiC based on TiC and Ni

MG Rastegaeva, AN Andreev, VE Chelnokov, KV Vassilevski, AI Babanin, IP Nikitina, AA Lavrent'ev, in Int. Seminar Semiconductor Silicon Carbide and SiC-Based Devices, Book of of Abstracts, edited by:, VE Udaltsov

published by Novgorod State University(Novgorod), 50 (1995).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Fabrication of GaN mesa structures
  2. GaN Layers Grown by HVPE on P-type 6H-SiC Substrates

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Sunday, June 30, 1996 2:36:45 PM

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