Data for reference majewski-bookarticle-1995-711

Electronic Properties of InAs/Antimonide-Based short period tunneling structures

JA Majewski, in The Physics of Semiconductors, edited by:, DJ Lockwood

published by World Scientific(Singapore), 711 (1995).

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This item is cited by the following items in the database:

  1. Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN

Contributed by Jacek A. Majewski from esaki.wsi.physik.tu-muenchen.de. on Friday, May 31, 1996 1:29:36 PM

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