Data for reference pankove-bookarticle-1994-389

High-Temperature GaN/SiC Heterojunction Bipolar Transistor with High Gain

JI Pankove, SS Chang, HC Lee, RJ Molnar, TD Moustakas, B Van Zeghbroeck

published by , 389 (1994).

The first widegap heterostructure bipolar transistor using a GaN emitter and a SiC base and collector has been presented.

This item is cited by the following items in the database:

  1. GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
  2. Schottky barrier properties of various metals on n-type GaN

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Thursday, May 30, 1996 7:23:38 AM

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