published by INSPEC, Institution of Electrical Engineers(London, UK), 0 (1999).
IEE Books Properties, processing and applications of Gallium Nitride and Related Semiconductors Edited by: J. H. Edgar – Kansas State University, USA S. Strite – Uniphase Laser Enterprise, AG, Zurich, Switzerland I.Akasaki – Meijo University, Japan H.Amano – Meijo University, Japan C. Wetzel – Meijo University, Japan CONTENTS Introduction Contributing authors Abbreviations PART A: PHYSICAL, ELECTRICAL, AND OPTICAL PROPERTIES A1 – STRUCTURAL, MECHANICAL AND THERMAL PROPERTIES A1.1 - Common crystal structures of the group III -nitrides M. Leszczynski A1.2 - Lattice parameters and crystal structures of the group III- nitrides M. Leszczynski, T. Suski, J. Domagala and P.Prystawko A1.3 - Mechanical properties of the group III nitrides A. Polian A1.4 - Thermal properties of the group III nitrides S.Krukowski, M. Leszczynski and M. Porowski A2 – AlN: ELECTRICAL, ELECTRONIC AND OPTICAL PROPERTIES A2.1 - Bandedge and optical functions of AlN A. Yoshida A2.2 - Raman and IR studies of AlN A. Yoshida A2.3 - Photoluminecsence/cathodoluminescence of clean samples of AlN A. Yoshida A2.4 - Electrical and transport properties of AlN C.-M. Zetterling A3 – GaN: ELECTRICAL, ELECTRONIC AND OPTICAL PROPERTIES A3.1 - Bandedge and optical functions of GaN M. Leroux and B.Gil A3.2 - Raman and IR studies of GaN C. Wetzel and I. Akasaki A3.3 - Luminescence of GaN M. Leroux and B. Gil A3.4 - Excitons in GaN B.Gil and M. Leroux A3.5 - Time resolved photoluminescence studies of GaN H.X. Jiang and J.Y. Lin A3.6 - Persistent photoconductivity in GaN H.X. Jiang and J.Y. Lin A3.7 - Electrical transport in wurtzite and zincblende GaN D.C.Look A3.8 - Characterization of III-V nitrides by capacitance transient spectroscopy W.K. Goetz A3.9 - Electron affinity of AlN, GaN and AlGaN alloys R.J.Nemanich A3.10 - Magnetic resonance studies of GaN-based materials and devices W.E. Carlos A4 – InN: ELECTRICAL, ELECTRONIC AND OPTICAL PROPERTIES A4.1 - Bandedge and optical functions of InN M. Leroux and B.Gil A4.2 - Raman and IR studies of InN C. Wetzel and I. Akasaki A4.3 - Basic physical properties of InN T.L. Tansley and E.M. Goldys A4.4 - Electrical and transport properties of InN T.L. Tansley and E.M. Goldys A4.5 - Electrical transport properties of GaInN and AlInN T.L. Tansley and E.M. Goldys A5 – AlGaN: ELECTRICAL, ELECTRONIC AND OPTICAL PROPERTIES A5.1 - Optical properties of AlGaN - H. Amano and I. Akasaki A5.2 - Raman and IR reflectance studies of AlGaN C. Wetzel and I. Akasaki A5.3 - Electrical and transport properties of AlGaN M.D. Bremser A6 – BAND STRUCTURE OF GROUP III NITRIDES A6.1 - General remarks on the band structure of group III nitrides M.Suzuki and T. Uenoyama A6.2 - Electronic band structures of ZB GaN and AlN M.Suzuki and T. Uenoyama A6.3 - Spin orbit and crystal-field splitting energies of GaN and AlN M.Suzuki and T. Uenoyama A6.4 - Luttinger anf Bir-Pikus parameters of GaN and AlN M.Suzuki and T. Uenoyama A6.5 - Electron and hole effective masses of GaN and AlN M.Suzuki and T. Uenoyama A6.6 - Deformation potentials of GaN and AlN M.Suzuki and T. Uenoyama A6.7 - Momentum matrix elements of GaN M.Suzuki and T. Uenoyama A6.8 - Subband structure of GaN/AlGaN QW M.Suzuki and T. Uenoyama A6.9 - Optical gain of bulk GaN and GaN/AlGaN quantum wells M.Suzuki and T. Uenoyama A7 – CRYSTAL DEFECTS IN GaN AND RELATED COMPOUNDS A7.1 - General remarks on extended defects in GaN and related materials L.T. Romano A7.2 - Planar defects in GaN: basal plane faults, prismatic faults, stacking mismatch boundaries and inversion domain boundaries J.E. Northrup and L.T. Romano A7.3 - Defects in GaN and related materials: perfect dislocations, partial dislocations, dislocation movement and cracks L.T.Romano A7.4 - Defects in GaN and related materials: open core dislocations and V-defects L.T.Romano A7.5 - Structural characterization of bulk GaN platelet crystals Z. Liliental-Weber A7.6 - HRTEM characterisation of planar defects in GaN films on sapphire L.T. Romano A7.7 - HRTEM characterisation of GaN films on GaAs N. Kuwano A7.8 - HRTEM characterisation of GaN and related compounds on SiC A.D. Hanser and R.F. Davis A7.9 - X-ray diffraction characterisation of GaN based materials: general remarks M. Leszczynski A7.10 - X-ray diffraction characterisation of GaN based materials: rocking curve analysis M. Leszczynski, J. Domagala and P.Prystawko A7.11 - X-ray diffraction characterisation of GaN based materials: triple axis diffractometry I. Amano and H. Akasaki A8 – IMPURITIES AND NATIVE DEFECTS IN GaN AND RELATED COMPOUNDS A8.1 - Native defects, impurities and doping in GaN and related compounds: general remarks C.G. Van de Walle, J. Neugebauer and C. Stampfl A8.2 - Native point defects in GaN and related compounds C.G.Van de Walle, J. Neugebauer and C. Stampfl A8.3 - O, C and other unintentional impurities in GaN and related compounds C. Wetzel and I. Akasaki A8.4 - Shallow donors in GaN and related compounds J.W. Orton and C.T. Foxon A8.5 - Acceptors in GaN and related compounds J.W. Orton and C.T. Foxon A8.6 - Theory of codoping of acceptors and reactive donors in GaN H. T.Yamamoto and H. Katayama-Yoshida A8.7 - Yellow luminescence in GaN C.G. Van de Walle and J. Neugebauer A8.8 - Hydrogen and acceptor compensation in GaN C.G. Van de Walle and J. Neugebauer and N.M. Johnson A8.9 - 3d transition metals in GaN and related compounds K. Pressel and P. Thurian A8.10 - Er-doped GaN and AlN J. Torvik A9 – CHEMICAL AND COMPOSITIONAL ANALYSIS OF GaN AND RELATED MATERIALS A9.1 - Chemical and compositional analysis of GaN and related compounds: general remarks T.S. Cheng A9.2 - Measurement of alloy content in GaN and related materials T.S. Cheng A9.3 - Measurement of dopants and impurities in GaN and related materials T.S. Cheng Click here to return to top of file PART B: MATERIALS SYNTHESIS AND PROCESSING B1 – BULK CRYSTAL GROWTH OF GaN AND RELATED COMPOUNDS B1.1 - High pressure solution growth of GaN and related compounds I. Grzegory and S. Porowski B1.2 - Sublimation Growth of GaN and AlN K. Nishino and S. Sakai B1.3 - RF growth of bulk GaN and AlN J. Nause B2 – EPITAXIAL GROWTH OF GaN AND RELATED COMPOUNDS B2.1 - Sapphire substrates for growth of GaN and related compounds Y. Takedo and M. Tabuchi B2.2 - SiC substrates for growth of GaN and related compounds A.D.Hanser and R.F. Davis B2.3 - Epitaxy of III-N layers on GaN substrates- M. Leszczynski, P. Prystawko and S. Porowski B2.4 - Alternative oxide substrates for GaN heteroepitaxy E.S. Hellman B2.5 - Cubic substrates for growth of GaN and related compounds H. Okumura B2.6 - Halide VPE of GaN A.Usui and K.Hiramatsu B2.7 - MOVPE of GaN and related compounds J.M. Redwing and T.F. Kuech B2.8 - MBE of GaN and related compounds M. Kamp and H. Riechert B2.9 - Selective area growth and epitaxial lateral overgrowth of GaN K.Hiramatsu and A.Usui B2.10 - Lateral epitaxy and microstructure in selectively grown GaN on SiC substrates T.S. Zhelava, O.-H.Nam and R.F. Davis B3 – ION IMPLANTATION OF GaN AND RELATED COMPOUNDS B3.1 - General remarks on ion implantation of GaN and related compounds S. Strite B3.2 - Impurity redistribution of implanted and annealed GaN J.C. Zolper B3.3 - Electrical properties of ion implanted and annealed GaN J.C. Zolper B3.4 - Optical properties of implanted GaN S. Strite B4 – ETCHING OF GaN AND RELATED COMPOUNDS B4.1 - General remarks on III-V nitride etching I. Adesida B4.2 - Dry etching of GaN and related compounds A.T. Ping and I. Adesida B4.3 - Wet etching of GaN and related compounds C. Youtsey and I. Adesida Click here to return to top of file PART C: SPECIFICATIONS, CHARACTERISATION AND APPLICATIONS OF GaN-BASED DEVICES C1 – MATERIAL INTERFACES WITH GaN AND RELATED COMPOUNDS C1.1 - Ohmic contacts to GaN and the III-V semiconductor alloys S.E. Mohney C1.2 - Schottky barrier contacts to GaN S.E. Mohney C1.3 - Band offsets in AlN, GaN and InN S.W. King, R.J. Nemanich and R.F. Davis C2 – STRAINED GaInN AND QUANTUM WELLS C2.1 - GaInN quantum wells: composition pulling effect K. Hiramatsu and Y. Kawaguchi C2.2 - GaInN quantum wells: microstructure (TEM) of GaInN QWs A. Hangleiter and F. Scholz C2.3 - GaInN quantum wells: optical properties - A. Hangleiter C2.4 - GaInN quantum wells: effect of phase separation on lasing A. Hangleiter C2.5 - GaInN quantum wells: piezoelectricity T. Takeuchi and I. Akasaki C3 – GaN-BASED LIGHT EMITTING DIODES (for lasers see chapter C5) C3.1 - UV, blue and green InGaN quantum well-structure LEDs S. Nakamura C3.2 - Toyoda Gosei GaN LEDs M. Koike C3.3 - InGaN LEDs grown on 6H-SiC G. Bulman, K.Doverspike, H.S. Kong, M. Leonard, H. Dieringer, D.Emerson, D. Slater, G. Negley, J.Edmond and K.L.More C3.4 - Colour conversion of GaN LEDs J. Baur, P. Schlotter and J. Schneider C3.5 - Degradation mechanisms in GaN LEDs T. Egawa and M. Umeno C4 – GaN-BASED TRANSISTORS C4.1 - General remarks on GaN-based transistors and potential for high temperature/power operation J. Burm C4.2 - GaN FET structures: MESFET, MISFET, JFET and MODFET J. Burm and L.F.Eastman C4.3 - AlGaN/GaN HFETs/MODFETs J. Burm and L.F.Eastman C4.4 - GaN/SiC HBTs - J. Burm C5 – GaN-BASED LASERS AND OTHER DEVICES C5.1 - InGaN/GaN/AlGaN-based laser diodes S. Nakamura C5.2 - Optically pumped lasing and current injection lasing in GaN-based laser structures J.J. Song and W.Shan C5.3 - Gain coefficient and lasing threshold in GaN-based lasers A. Hangleiter and H.Amano C5.4 - Theoretical and experimental results on GaN-based lasers K. Domen and A. Kuramata C5.5 - InGaN/GaN laser diodes grown on 6H-SiC G.E.Bulman, K. Doverspike, S.T. Sheppard, K.Haberern, H.Dieringer, H.S. Kong, J. Edmond, Y.-K. Song, M. Kuball and A. Nurmikko C5.6 - Technologies of GaN surface emitting lasers K .Iga and T. Honda C5.7 - Role of defects in GaN-based lasers J. Pankove C5.8 - GaN-based UV detectors G.M.Smith Subject index
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Contributed by Phyllis Buchta from iee-180-185.iee.org.uk. on Tuesday, June 29, 1999 6:49:43 AM
last updated Thursday, April 28, 2005 11:13:52 AM.
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