Data for reference nakamura-book-1997-the_b

The Blue Laser Diode - GaN based Light Emitters and Lasers

Shuji Nakamura, Gerhard Fasol

published by Springer-Verlag(Heidelberg), 0 (1997).

ISBN 3540615903 , 343 pages

Review by O. Briot for MIJ-NSR

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This item is cited by the following items in the database:

  1. Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC
  2. Comparison of Luminescence and Physical Morphologies of GaN Epilayers
  3. Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
  4. MOVPE Growth and Structural Characterization of AlxGa1-xN
  5. p-doping of GaN by MOVPE
  6. Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
  7. Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
  8. The Polarity of GaN: a Critical Review
  9. Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's
  10. Heterostructure for UV LEDs Based on Thick AlGaN Layers
  11. On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
  12. Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
  13. Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
  14. Novel approach to simulation of group-III nitrides growth by MOVPE
  15. Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
  16. Optical phonons and free-carrier effects in MOVPE grown AlxGa1-xN measured by Infrared Ellipsometry
  17. Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures
  18. The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1-xN quantum wells
  19. Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides
  20. UV-Specific (320-365 nm) Digital Camera Based On a 128x128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
  21. Solar-Blind AlGaN Heterostructure Photodiodes
  22. A Review of Dry Etching of GaN and Related Materials
  23. Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory
  24. Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells
  25. Free excitons in strained MOCVD-grown GaN layers
  26. Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere
  27. Development of High Power Green Light Emitting Diode Chips

Contributed by Gerhard Fasol from tokyo-02-086.gol.com. on Sunday, January 5, 1997 11:05:25 PM
Modified by Gerhard Fasol from pm-6-197.tokyo.gol.com. on Sunday, March 30, 1997 8:43:52 PM

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