Data for reference edgar-book-1994-prope

Properties of Group III Nitrides

JH Edgar, (Editor)

published by Electronic Materials Information Service (EMIS)(London), 0 (1994).

ISBN 0 85296 818 3 
Click here if you are interested in ordering this book through MIJ-NSR (in association with amazon.com).
 165 US dollars / 95 pounds sterling
 320 pages, 280x210 mm
 Number 11 in the EMIS Datareviews Series (from INSPEC division of the
 Institution of Electrical Engineers)
 
 This comprises 40 modules ('Datareviews') of evaluated data, background
 text and guidance to the literature commissioned from 30 researchers
 working in the USA, Europe, Japan and Australia.
 
 For BN, AlN, GaN and InN there is concise in depth treatment of the
 following: crystal structure, mechanical properties, thermal properties,
 phase diagrams, electrical transport, band structure, optical functions,
 photoluminescence, cathodoluminescence, Raman spectroscopy, IR reflection
 spectroscopy, defects, impurities and materials interfaces.
 
 In addition there are Datareviews on selected properties of AlGaN, GaInN,
 (AlN)x(SiC)1-x and diamond/c-BN alloys.
 
 The book can be ordered by credit card, cheque or order form.
 
 To order from the USA or Canada contact Institution of Electrical
 Engineers, c/0 Whitehurst & Clark, 100 Newfield Avenue, Edison,
 NJ 08837
 Phone +1 (888) 438 2517 (toll free USA)
 +1 (732) 417 9575 (Canada, Central & South America)
 Fax +1 (732) 225 1562
 E-mail wcbooksiee@aol.com
 
 To order from elsewhere please contact IEE, PO Box 96, Stevenage, Herts SG1
 2SD, England.
 Phone +44 1438 313311, Fax +44 1438 742792.

This item is cited by the following items in the database:

  1. BANDGAP VARIATION AT THE ISOSTRUCTURAL PHASE TRANSFORMATION OF WURTZITE InN
  2. Temperature distribution in the chamber used for crystal growth of GaN under high pressure of nitrogen
  3. Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
  4. Suppression of phase separation in InGaN due to elastic strain
  5. Thermodynamic properties of group-III nitrides and related species
  6. Uniaxial Strain Effect on the Electronic and Optical Properties of Wurtzite GaN/AlGaN Quantum Well Lasers

Contributed by John Sears
Modified by Phyllis Buchta from iee-180-185.iee.org.uk. on Tuesday, June 29, 1999 10:39:55 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Thursday, April 28, 2005 11:13:34 AM.
© 1998 The Materials Research Society