1962

• Stimulated emission of radiation from GaAs p-n junctions

1964

• Flux Growth, Czochralski Growth, and Hydrothermal Synthesis of Lithium Metagallate Single Crystals

1968

• Vacuum deposition of AlN acoustic transducers

1969

• The preparation and properties of vapor-deposited single-crystal-line GaN

1970

• Optical absorption of GaN

1971

• Stimulated emission and laser action in gallium nitride

1972

• Electrical and optical properties of rf-sputtered GaN and InN

1973

• Violet luminescence of Mg-doped GaN
• Raman scattering in thin film waveguides
• Acoustic surface wave properties of epitaxially grown aluminum nitride and gallium nitride on sapphire

1974

• rf-sputtered aluminum nitride films on sapphire
• Photoluminescence of Zn-implanted GaN
• Photoemission from GaN
• Secondary electron emission from the GaN:Cs-O surface
• Optical investigations of Zn, Hg, and Li doped GaN

1975

• Epitaxial growth of aluminum nitride films on sapphire by reactive evaporation
• Monte Carlo calculation of the velocity-field relationship for gallium nitride

1976

• Ultraviolet electroluminescence in AlN

1977

• Efficient injection mechanism for electroluminescence in GaN
• Nonlinear optical susceptibilities of AlN film

1978

• Reactive sputtering of gallium nitride thin films for GaAs MIS structures
• The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor process

1982

• Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth
• Lateral Epitaxial Overgrowth of GaAs by Organometallic Chemical Vapor Deposition,
• A new silicon-on-insulator structure using molecular beam epitaxial growth on porous silicon

1983

• Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AIN-coated sapphire substrates
• Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor deposition
• Deactivation of the boron acceptor in silicon by hydrogen
• Properties and ion implantation of Al(x)Ga(1-x)N epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition
• Quantitative ion beam process for the deposition of compound thin films
• 1.0 GHz thin-film acoustic wave resonator on GaAs

1985

• Effect of Substrate Temperature on the Doping Profiles of Si in Selectively doped AlGaAs/GaAs/AlGaAs Double Heterojuction Structures

1986

• Growth of GaN films using trimethylgallium and hydrazine
• Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
• Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
• Growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxy
• Optical Gain in GaInN/GaN Heterostructures

1987

• Molecular beam epitaxial growth of CoSi₂ on porous Si

1988

• Disk hydrogen plasma assisted chemical vapor deposition of aluminum nitride
• Reflection mass spectrometry of As incorporation during GaAs molecular beam epitaxy
• Parameters for in situ growth of high Tc superconducting thin films using an oxygen plasma source

1989

• Heteroepitaxial growth of InN by microwave-excited metalorganic chemical vapor phase epitaxy
• Al_xGa_1-xN polarity determination by x-ray diffraction

1990

• Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wells
• Nitrogen pair luminescence in GaAs
• Direct demonstration of a misfit strain-generated electric field in a [1 1 1] growth axis zinc-blende heterostructure
• Effects of Peierls barrier and epithreading dislocation orientation on the critical thickness in heteroepitaxial structures
• Ultraviolet reflectance of AlN, diamond-like carbon, and SiC thin films
• Gallium desorption from GaAs and (Al,Ga)As during molecular beam epitaxy growth at high temperatures

1991

• Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low- pressure metalorganic chemical vapor deposition
• Novel metalorganic chemical vapor deposition system for GaN growth
• Electrical properties of GaAs/GaN/GaAs semiconductor- insulator-semiconductor structures
• High electron mobility GaN/Al_xGa_1-xN heterostructures grown by low-pressure metalorganic chemical vapor deposition
• Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition
• Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy
• Reflective filters based on single-crystal GaN/Al_xGa_1-xN multilayers deposited using low-pressure metalorganic chemical vapor deposition
• breakdown characteristics of SiC diodes
• Overgrowth of indium nitride thin films on aluminum nitride nucleated (00.1) sapphire by reactive magnetron sputtering
• Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy
• Hot filament enhanced chemical vapor deposition of AlN thin films
• Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

1992

• Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition
• High quality GaAs on Si by conformal growth
• Synthesis of metastable epitaxial zincblende-structure AlN by solid-state-reaction
• Growth of GaN(0001)1 (times) 1 on Al₂O₃(0001) by gas-source molecular beam epitaxy
• High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers
• Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-Al_xGa_1-xN heterojunctions
• Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

1993

• Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin films
• Growth of GaAsN alloys by low-pressure metalorganic chemical vapor deposition using plasma-cracked NH₃
• Metal semiconductor field effect transistor based on single crystal GaN
• High-power InGaN/GaN double-heterostructure violet light emitting diodes
• Metal contacts to gallium nitride
• A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma-assisted molecular-beam epitaxy
• Ultraviolet and violet light-emitting GaN diodes grown by low-pressure metalorganic chemical vapor deposition
• Ultraviolet and violet light-emitting GaN diodes grown by low-pressure metaorganic chemical vapor deposition
• GaN grown on hydrogen plasma cleaned 6H-SiC substrates
• Electron transport mechanism in gallium nitride
• Reversible changes in doping of InGaAlN alloys induced by ion implantation or hydrogenation
• high breakdown SiC diodes
• High electron mobility transistor based on a GaN-Al_xGa_1-xN heterojunction
• Band gap bowing in GaP_1-xN_x alloys
• Strain and charge distribution in GaN-AlN-GaN semiconductor-insulator-semiconductor structure for arbitrary growth orientation
• Schottky barrier photodetector based on Mg-doped p-type GaN films
• Formation of gallium nitride by a novel hot mechanical alloying process
• Observation of optically detected magnetic resonance in GaN films
• Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy
• Reactive ion etching of gallium nitride in silicon tetrachloride plasmas
• Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces
• GaN/AlN digital alloy short-period superlattices by switched atomic layer metalorganic chemical vapor deposition
• Metalorganic vapor phase epitaxy of GaP_1-xN_x alloys on GaP
• Thermal stability of GaN investigated by low-temperature photoluminescence spectroscopy
• Tailoring of Internal Fields in Ingaas/Gaas Multiwell Structures Grown On (111)B Gaas
• p-type zinc-blende GaN on GaAs substrates
• Comparison of the physical properties of GaN thin films deposited on (0001) and (0112) sapphire substrates
• Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxy

1994

• Low resistance ohmic contacts on wide band-gap GaN
• Observation of stimulated emission in the near ultraviolet from a molecular beam epitaxy grown GaN film on sapphire in a vertical-cavity, single pass configuration
• Epitaxial Solid-Solution Films of Immiscible MgO and CaO
• Room-temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructure
• Optical gain of optically pumped Al_0.1Ga_0.9N/GaN double heterostructure at room temperature
• Candela-class high-brightness InGaN/AlGaN double- heterostructure blue-light-emitting diodes
• Self organized growth of regular nanometer-scale InAs dots on GaAs
• Temperature-dependent electron mobility in GaN: Effects of space charge and interface roughness scattering
• Hydrogenation of p-type gallium nitride
• Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN
• Nonalloyed ohmic contacts on GaN using InN/GaN short- period superlattices
• Hydrogenation of GaN, AlN, and InN
• Heteroepitaxial Growth of InN on AlN Nucleated (00.1) Sapphire by Ultrahigh Vacuum Electron Cyclotron Resonance Assisted Reactive Magnetron Sputtering
• Photoluminescence of zinc-blende GaN under hydrostatic pressure
• Optical properties near the band gap on hexagonal and cubic GaN
• Molecular-beam-epitaxy growth of GaN on GaAs(100) by using reactive nitrogen source
• Intensity dependence of photoluminescence in GaN thin films
• Simulations for the high-speed response of GaN metal- semiconductor-metal photodetectors
• Dry patterning of InGaN and InAlN
• p-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg
• Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers
• Reactive ion etching of GaN using BCl₃
• GaN epitaxial layers grown on 6H-SiC by the sublimation sandwich technique
• Microwave performance of a 0.25 mu m gate AlGaN/GaN heterostructure field effect transistor
• High-quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition
• High quality self-nucleated Al_xGa_1-x N layers on (00.1) sapphire by low-pressure metalorganic chemical vapor deposition
• Determination of the GaN/AlN band offset via the (-/0) acceptor level of iron
• Conduction-Band Engineering in Piezoelectric[111] Multiple- Quantum-Well P-I-N Photodiodes
• Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers
• Low-temperature epitaxial growth and photoluminescence characterization of GaN
• Low pressure metalorganic chemical-vapor deposition of cubic GaN over (100) GaAs substrates
• Comparison of Optical Nonlinearities in Piezoelectric Strained [111]-Grown and [001]-Grown (in,Ga)As (Al,Ga)As Quantum-Wells,
• Deep level defects in n-type GaN
• Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature
• p-type conduction in Mg-doped GaN and Al_0.08Ga_0.92N grown by metalorganic vapor phase epitaxy
• Microstructure and photoluminescence of GaN grown on Si(111) by plasma-assisted molecular beam epitaxy
• Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy
• High quality Al_xGa_1-xN grown by metalorganic chemical vapor deposition using trimethylamine alane as the aluminum precursor
• Characteristics of chemically assisted ion beam etching of gallium nitride
• Growth by molecular beam epitaxy and electrical characterization of Si-doped zinc blende GaN films deposited on beta -SiC coated (001) Si substrates
• 1.54-mu m photoluminescence from Er-implanted GaN and AlN

1995

• Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphire
• Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300C
• p-type conduction in Mg-doped Ga_0.91In_0.09N grown by metalorganic vapor-phase epitaxy
• Calculated second-harmonic susceptibilities of BN, AlN, and GaN
• High dislocation densities in high efficiency GaN-based light-emitting diodes
• Microstructural characterization of alpha -GaN films grown on sapphire by organometallic vapor phase epitaxy
• Photoemission capacitance transient spectroscopy of n- type GaN
• Silicon doping of GaN using disilane
• Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy
• Use of InN for Ohmic contacts on GaAs/AlGaAs heterojunction bipolar transistors
• Electrical and structural properties of In_xGa_1-xN on GaAs
• High temperature electron cyclotron resonance etching of GaN, InN, and AlN
• CCl₄ doping of GaN grown by metalorganic molecular beam epitaxy
• Schottky-based band lineups for refractory semiconductors
• Electron Hall mobility of n-GaN
• Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p-type layers
• Epitaxial Growth of Cubic AlN Films on (100)silicon and (111)silicon by Pulsed Laser Ablation
• Thermal stability of implanted dopants in GaN
• Optical properties of GaN epitaxial films grown by low- pressure chemical vapor epitaxy using a new nitrogen source: Hydrazoic acid (HN₃)
• Blue-violet light emitting gallium nitride p-n junctions grown by electron cyclotron resonance-assisted molecular beam epitaxy
• Study of defect states in GaN films by photoconductivity measurement
• Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface
• High quality AlN and GaN epilayers grown on (00.1) sapphire, (100), and (111) silicon substrates
• Nitrogen and fluorine ion implantation in In_xGa_1-xN
• Bowing parameters for zinc-blende Al_1-xGa_xN and Ga_1-xIn_xN
• High etch rates of GaN with magnetron reactive ion etching in BCl₃ plasmas
• Dynamics of a band-edge transition in GaN grown by molecular beam epitaxy
• Pressure-dependent photoluminescence study of wurtzite GaN
• Photoconductive ultraviolet sensor using Mg-doped GaN on Si(111)
• Initial stage of aluminium nitride film growth on 6H-silicon carbide by plasma-assisted, gas source molecular beam epitaxy
• Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates
• Temperature dependence of interband transitions in GaN grown by metalorganic chemical vapor deposition
• Photoluminescence of residual transition metal impurities in GaN
• AlGaN pn junctions
• Study of chemically assisted ion beam etching of GaN using HCl gas
• On p-type doping in GaN - acceptor binding energies
• Two-dimensional electron gas in GaN-AlGaN heterostructures deposited using trimethylamine-alane as the aluminum source in low pressure metalorganic chemical vapor deposition
• Ion implantation doping and isolation of GaN
• Photoluminescence decay dynamics in an InGaN/AlGaN/GaN double-heterostructure blue-light-emitting diode
• Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire
• a 4. 5 kV 6H SiC rectifier
• Neutral-donor-bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition
• GaN grown by molecular beam epitaxy at high growth rates using ammonia as the nitrogen source
• Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy
• Growth of Al_xGa_1-xN:Ge on sapphire and silicon substrates
• Electron-phonon interactions in the wide band-gap semiconductor GaN
• Reactive ion etching of GaN using CHF₃/Ar and C₂ClF₅/Ar plasmas
• Characterization of structural defects in wurtzite GaN grown on 6H SiC using plasma-enhanced molecular beam epitaxy
• High quality InGaN films by atomic layer epitaxy
• High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes
• Photovoltaic effects in GaN structures with p-n junctions
• Formation of threading defects in GaN wurtzite films grown on nonisomorphic substrates
• Mechanism of yellow luminescence in GaN
• Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high-resolution transmission electron microscopy
• Dry etch damage in InN, InGaN, and InAlN
• Paramagnetic resonance in GaN-based light emitting diodes
• Time-resolved exciton luminescence in GaN grown by metalorganic chemical vapor deposition
• Investigation of longitudinal-optical phonon-plasmon coupled modes in highly conducting bulk GaN
• Valence subband structures of wurtzite GaN/AlGaN quantum wells
• High-quality GaN epitaxial layer grown by metalorganic vapor phase epitaxy on (111) MgAl[sub 2]O₄ substrate
• Growth of AlN by metalorganic molecular beam epitaxy
• Study of Schottky barriers on n-type GaN grown by low- pressure metalorganic chemical vapor deposition
• Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition
• Surface-mode stimulated emission from optically pumped GaInN at room temperature
• Synthesis of GaN by N ion implantation in GaAs (001)
• Direct observation of transferred-electron effect in GaN
• Zeeman spectroscopy of the Fe³⁺ center in GaN
• Theory of optical gain in ideal GaN heterostructure lasers
• Acceptor-bound exciton recombination dynamics in p-type GaN
• Properties of a Si doped GaN/AlGaN single quantum well
• Excitonic recombination in GaN grown by molecular beam epitaxy
• Temperature-mediated phase selection during growth of GaN on (111)A and (111)B GaAs substrates
• Real and reciprocal space mapping of the mosaic dispersion in self-nucleated Al_xGa_1-xN thin films on (00.1) sapphire
• Kinetics of photoconductivity in n-type GaN photodetector
• Photoluminescence from wurtzite GaN under hydrostatic pressure
• GaN thin films deposited via organometallic vapor phase epitaxy on alpha (6H)-SiC(0001) using high-temperature monocrystalline AlN buffer layers
• Microstructure of GaN epitaxy on SiC using AlN buffer layers
• Spontaneous and stimulated emission from photopumped GaN grown on SiC
• Thermal and plasma-assisted nitridation of GaAs(100) using NH₃
• Growth of GaN films by hot wall epitaxy
• Sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs
• Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopy
• Theoretical prediction of GaN lasing and temperature sensitivity
• Theory of laser gain in group-III nitrides
• Exciton Lifetimes in GaN and InGaN
• Exciton lifetimes in GaN and GaInN
• Growth of device quality GaN at 550 (degrees) C by atomic layer epitaxy
• In-Well Screening Nonlinearities in Piezoelectric Multiple- Quantum Wells

1996

• Electron Cyclotron resonance etch characteristics of GaN in SiCl4/Ar
• Determination of the effective mass of GaN from infrared reflectivity and Hall effect
• Deposition of high quality wurtzite GaN films over cubic (111) MgAl₂O₄ substrates using low pressure metalorganic chemical vapor deposition
• Structural properties of GaN films grown on sapphire by molecular beam epitaxy
• High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN
• Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface
• Deep levels in the upper band-gap region of lightly Mg- doped GaN
• Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN
• Scanning tunneling microscopy and tunneling luminescence of the surface of GaN films grown by vapor phase epitaxy
• High-quality GaInN/GaN multiple quantum wells
• Near-Field Optical Data Storage
• Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures
• Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition
• Room-temperature photoenhanced wet etching of GaN
• Effective-mass Hamiltonian for strained wurtzite GaN and analytical solutions
• Very low resistance multilayer Ohmic contact to n- GaN
• Carbon-doped boron nitride cold cathodes
• Metastability and persistent photoconductivity in Mg- doped p-type GaN
• Role of hydrogen in doping of GaN
• Room-temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy
• Low interface trap density for remote plasma deposited SiO₂ on n-type GaN
• Mechanisms of band-edge emission in Mg-doped p-type GaN
• Ca and O ion implantation doping of GaN
• Morphology and photoluminescence improvements from high- temperature rapid thermal annealing of GaN
• New near-infrared defect luminescence in GaN doped with vanadium by ion implantation
• Hydrogen passivation of Ca acceptors in GaN
• InGaN multi-quantum-well structure laser diodes grown on MgAl₂O₄ substrates
• AlGaN ultraviolet photoconductors grown on sapphire
• Cleaved GaN facets by wafer fusion of GaN to InP
• Low Energy Electron Enhanced Etching of Semiconductors,
• Ion-implanted GaN junction field effect transistor
• Electric breakdown in GaN p-n junctions
• A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films
• Electrical characterization of Mg-doped GaN grown by metalorganic vapor phase epitaxy
• Resonant Raman scattering in hexagonal GaN
• Evaluation of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs
• Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers
• Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy
• Strongly localized excitons in gallium nitride
• High quality InP on Si by conformal growth
• Growth defects in GaN films on 6H- SiC substrates
• Minority-carrier-enhanced reactivation of hydrogen- passivated Mg in GaN
• Residual strain in GaN epilayers grown on sapphire and (6H)SiC substrates
• Thermal annealing characteristics of Si and Mg-implanted GaN thin films
• Fundamental optical transitions in GaN
• 75 A GaN channel modulation doped field effect transistors
• Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light emitting diodes
• Measurement of AlN/GaN (0001) heterojunction band offsets by x-ray photoemission spectroscopy
• Theoretical study of room temperature optical gain in GaN strained quantum wells
• Nonequilibrium electron distributions and phonon dynamics in wurtzite GaN
• Hall measurements and contact resistance in doped GaN/AlGaN heterostructures
• Growth and characterization of bulk InGaN films and quantum wells
• Activation energies of Si donors in GaN
• Response to ``Comment on `Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature' '' [Appl. Phys. Lett. 68, 3197 (1996)]
• Comment on ``Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature'' [Appl. Phys. Lett. 65, 520 (1994)]
• Growth and properties of scandium epitaxial films on GaN
• Characteristics of InGaN multi-quantum-well-structure laser diodes
• Growth of GaN on sapphire (0001) using a supersonic jet of plasma-generated atomic nitrogen
• Novel symmetry in the growth of gallium nitride on magnesium aluminate substrates
• X-ray crystallographic study of GaN epitaxial films on Al₂O₃(0001) substrates with GaN buffer layers
• Deep level defects in Mg-doped, p-type GaN grown by metalorganic chemical vapor deposition
• Morphology of luminescent GaN films grown by molecular beam epitaxy
• Preparation of GaN films on sapphire by metalorganic chemical vapor deposition using dimethylhydrazine as nitrogen source
• Electron cyclotron resonance etching characteristics of GaN in SiCl₄/Ar
• Optical gain in GaInN/GaN heterostructures
• The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer
• High responsitivity intrinsic photoconductors based on Al_xGa_1-xN
• Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers
• Deep level defects in n-type GaN compensated with Mg.
• Thermally stimulated current trap in GaN
• Growth and characterization of AlInGaN quaternary alloys
• Dynamics of bound-exciton luminescences from epitaxial GaN
• Study of deep level defects in n-GaN by the optical transmission method
• Refractive indices of zincblende structure beta - GaN(001) in the subband-gap region (0.7-3.3 eV)
• Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors
• Penetration depth measurements of single-crystal NbN films at millimeter-wave region
• Spatial distribution of the luminescence in GaN thin films
• Picosecond four-wave-mixing in GaN epilayers at 532 nm
• Electrical properties of boron nitride thin films grown by neutralized nitrogen ion assisted vapor deposition
• Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films
• Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition
• Effect of rapid thermal annealing on the electrical and physical properties of metalorganic chemical vapor deposited TiN
• Photoassisted dry etching of GaN
• Piezoresistive effect in wurtzite n-type GaN
• Etching of InP at >1μm·min⁻¹ inCl₂/Ar plasma chemistries
• Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition
• Highly resistive CH-doped GaN grown by plasma-assisted metalorganic chemical vapor deposition
• Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN films
• Selective growth of gallium nitride layers with a rectangular cross-sectional shape and stimulated emission from the optical waveguides observed by photopumping
• An optically pumped GaN- AlGaN vertical cavity surface emitting laser
• Inductively coupled plasma etching of GaN
• Mechanisms of recombination in GaN photodetectors
• Influence of Surface Defects on the Characteristics of GaN Schottky Diodes
• Suppression of leakage currents and their effect on the electrical performance of AlGaN/GaN modulation doped field-effect transistors
• Intrinsic optical properties of GaN epilayers grown on SiC substrates: Effect of the built-in strain
• Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions
• Synthesis of ultrafine gallium nitride powder by the direct current arc plasma method
• Photocurrent decay in n-type GaN thin films
• Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer
• Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation-doped field-effect transistors
• ICl/Ar electron cyclotron resonance plasma etching of III-V nitrides
• Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
• Ridge-geometry InGaN MQW structure laser diodes
• Nature of Mg impurities in GaN
• Microstructure of Ti/Al and Ti/Al/Ni/Au contacts for n-GaN
• Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes,
• Time-dependent study of low energy electron beam irradiation of Mg-doped GaN grown by metalorganic chemical vapor
• Light scattering in high-dislocation-density GaN
• Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double- heterostructure blue light-emitting diodes
• Room temperature epitaxy of Pd films on GaN under conventional vacuum conditions
• Optical patterning of GaN films
• Transverse modes and lasing characteristics of selectively grown vertical cavity semiconductor lasers
• Reactivation of acceptors and trapping of hydrogen in GaN/InGaN double heterostructures
• Radiative recombination lifetime measurements of InGaN single quantum well
• Low temperature inorganic chemical vapor deposition of heteroepitaxial GaN.
• Realization of optically pumped second-order GaInN-distributed-feedback lasers
• Real-time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry
• Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers
• Time-resolved photoluminescence studies of GaN epilayers grown by gas source molecular beam epitaxy on an AlN buffer layer on (111) Si
• Electroluminescence from erbium and oxygen coimplanted GaN
• Transient photocurrent induced in gallium nitride by two-photon absorption
• Metalorganic chemical vapor deposition of monocrystalline GaN thin films on beta- LiGaO[sub 2] substrates
• SiC rapid thermal carbonization of the (111)Si semiconductor-on-insulator structure and subsequent metalorganic chemical vapor deposition of GaN
• Amphoteric properties of substitutional carbon impurity in GaN and AlN.
• Critical thickness of GaN thin films on sapphire (0001)
• Damage to epitaxial GaN layers by silicon implantation
• Growth and properties of In_xGa _1-xN/Al_yGa _1-yN multiquantum wells developed by molecular beam epitaxy
• Inversion domains in GaN grown on sapphire
• Surface reconstruction of zinc-blende GaN
• Cleaved cavity optically pumped InGaN(en-dash) GaN laser grown on spinel substrates
• Laser diodes in piezoelectric quantum-well structures
• Electronic and structural properties of GaN grown by hydride vapor phase epitaxy.
• Optical transitions in GaN/Al_xGa_1-xN multiple quantum wells grown by molecular beam epitaxy
• Polarity determination of GaN films by ion channeling and convergent beam electron diffraction
• Strain effects on valence band structure in wurtzite GaN quantum wells
• Monitoring surface stoichiometry with the (2x 2) reconstruction during growth of hexagonal-phase GaN by molecular beam epitaxy
• Lattice-matching SiC substrates with GaN.
• Deep-level defects and n-type-carrier concentration in nitrogen implanted GaN
• Electron beam induced current measurements of minority carrier diffusion length in gallium nitride
• High field flashover strength of intrinsic gallium nitride and aluminum nitride in vacuum.
• Direct imaging of impurity-induced Raman scattering in GaN
• Near ultraviolet luminescence of Be doped GaN grown by reactive molecular beam epitaxy using ammonia
• High p-type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant
• Solid phase immiscibility in GaInN
• Properties of GaN grown at high rates on sapphire and on 6H- SiC
• Valence band splittings and band offsets of AlN, GaN, and InN
• Optical characteristics of p-type GaN films grown by plasma-assisted molecular beam epitaxy
• Nonalloyed Ti/Al Ohmic contacts to n-type GaN using high-temperature premetallization anneal
• The effect of atomic hydrogen on the growth of gallium nitride by molecular beam epitaxy
• Time-resolved photoluminescence studies of InGaN epilayers
• Surface lifetimes of Ga and growth behavior on GaN(0001)surfaces during molecular beam epitaxy
• Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233 K,
• Coexistence of wurtzite GaN with zinc blende and rocksalt studied by x-ray power diffraction and high-resolution transmission electron microscopy
• Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers
• Gain spectra and stimulated emission in epitaxial (In,Al) GaN thin films
• Photoluminescence related to the two-dimensinal electron gas at a GaN/AlGaN heterointerface
• A near-field scanning optical microscopy study of the photoluminescence from GaN films
• High quality GaN-InGaN heterostructures grown on (111) silicon substrates
• InGaN-GaN based light-emitting diodes over (111) spinel substrates
• Local vibrational modes of the Mg-H acceptor complex in GaN
• High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors
• Hardness and fracture toughness of bulk single crystal gallium nitride
• Room Temperature CW Operation of InGaN MQW Structure Laser Diodes
• Self-assembling GaN quantum dots on Al_xGa_1-xN surfaces using a surfactant
• Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
• Recombination dynamics in InGaN quantum wells
• Gallium vacancies and the yellow luminescence in GaN
• Sputtered AlN encapsulant for high-temperature annealing of GaN
• High temperature adduct formation of trimethylgallium and ammonia
• Mg-doped p-type GaN grown by reactive molecular beam epitaxy
• Photoluminescence study of high quality InGaN/GaN single heterojunctions
• Lattice parameters of gallium nitride
• Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates
• Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques
• Exciton region reflectance of homoepitaxial GaN layers
• High transconductance heterostructure field-effect transistors based on AlGaN/GaN
• Optical degradation of InGaN/AlGaN light-emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition
• Optical transitions in cubic GaN investigated by spatially resolved cathodoluminescence
• AlGaN/InGaN/GaN blue light emitting diode degradation under pulsed current stress
• Gain analysis for surface emission by optical pumping of wurtzite GaN
• Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H(en-dash) SiC and sapphire substrates
• Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire
• Characteristics of light-emitting diodes based on GaN p-n junctions grown by plasma assisted molecular beam epitaxy

1997

• High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) structures
• Arsenic mediated reconstructions on cubic (001) GaN
• Ohmic contacts to n-GaN using PtIn2
• Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
• Elastic moduli of gallium nitride
• Thermally stable PtSi Schottky contact on n-GaN
• Domain boundaries in eptiaxial wurtzite GaN
• Comparison of degradation caused by dislocation motion in compound semiconductor light-emitting devices
• The near band edge photoluminescence of cubic GaN epilayers
• Photoluminescence microscopy of InGaN quantum wells
• Alternative microstructure of GaN nucleation layers grown by low pressure metal-organic vapor phase epitaxy on sapphire substrate
• Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser dides with lifetimes of 27 hours
• Mg-doped green light emitting diodes over cubic (111) MgAl2O3 substrates
• Bowing parameter of the band-gap energy of GaNxAs1-x
• Excitation of a higher order transverse mode in an optically pumped In0.15Ga0.85N/In0.05Ga0.95N multiquantum well laser structure
• Low pressure synthesis of bulk, polycrystalline gallium nitride
• Optical linewidths of InGaN light emitting diodes and epilayers
• Deep levels and persistent photoconductivity in GaN thin films
• Optical properties of tensile-strained wurtzite GaN epitaxial layers
• Schottky barrier detectors on GaN for visible-blind UV detection
• Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy
• Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy
• Study of open-core dislocations in Gan films on (0001) sapphire
• Temperaure dependence of energy gap in GaN thin film studied by thermomodulation
• Small valence-band offsets at GaN/InGaN heterojunctions
• Gain spectroscopy on InGaN/GaN quantum well diodes
• InN-based Ohmic contacts to InAlN
• White light from InGaN/conjugated polymer hybrid light-emitting diodes
• Thermally oxidized AlN thin films for device insulators
• Anisotropy of the nitrogen conduction states in the group III nitrdes studied by polarized x-ray absorption
• Metalorganic vapor-phase epitaxy of cubic Al(x)Ga(1-x)N alloy on a GaAs (100) substrate
• Electrical and structural analysis of high-dose Si implantation in GaN
• High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III-V nitrides
• Subband emissions from InGaN multi-quantum-well laser diodes under room-temperature continous wave operation
• Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures
• Luminescence from localized states in InGaN epilayers
• Thermodynamic considerations in epitaxial growth of GaAs(1-x)N(x) solid solutions
• Comparison of high field electron transport in GaN and GaAs
• Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine
• exciton-phonon interection in InGaN/GaN and GaN/AlGaN multiple quantum wells
• Excitonic luminescence and absorption in dilute undoped GaN_xAs_1-x alloy (x<0. 3%)
• Theoretical evidence for efficient p-type doping of GaN using Be
• Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells
• Synthesis of gallium nitride quantum dots through reactive laser ablation
• Dispersion properties of aluminum nitride as measured by an optical waveguide technique
• Optical Properties of Wurtzite Structure GaN on Sapphire around Fundamental Absorption Edge (0. 78 - 4. 77 eV) by Spectroscopic Ellipsometry and the Optical Transmission Method
• Growth of single phase GaAs_1-xN_x with high nitrogen concentration by MOMBE
• Ballistic electron emission microscopy study of transport in GaN thin films
• Degenerate Layer at GaN/sapphire interface: Influence on Hall-effect measurements
• Characterization of InGaN MQW structures for blue semiconductor laser diodes
• Urbach-Martienssen tails in a wurtzite GaN epilayer
• Influence of growth conditions on electrical characteristics of AlN on SiC
• Band gaps of GaPN and GaAsN alloys
• Carbon-hydrogen complexes in vapor phase epitaxial GaN
• Resonant Raman scattering in GaN/(AlGa)N single quantum wells
• Correlation of cathodoluninescence inhomogeneity with microstructural defects in eptaxial GaN grown by metalorganic chemical-vapor deposition
• Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition
• Effect of hydrogen on the indium incorporation in InGaN epitaxial films
• Ultra-low resistive ohmic contacts on n-GaN using Si-implantation
• Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy
• Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN
• Direct observation of the inital nucleation and epitaxial growth of metastable cubic GaN on (001) GaAs
• Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes
• Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN
• Epitaxial relationships between GaN and Al2O3 (0001) substrates
• Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
• Comment on ‘Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions’ [Appl. Phys. Lett. 69, 1276 (1996)]
• Response to ‘Comment on ‘Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions’’ [
• AlGaN (0<x<1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition
• Role of self-formed InGaN quantum dots for exiton localization in the purple laser diode emitting at 420 nm
• Surface emission of InGaN epilayers under strong optical excitation
• Optical gain for wurtzite GaN with anisotropic strain in C plane
• Epitaxy of Al films on GaN studied by reflection high-energy electron diffraction and atomic force microscopy
• Calculation of unstable mixing region in wurtzite In_1‐x‐yGa_xAl_yN
• Persistent photoconductivity in n-type GaN
• Persistent photoconductivity in n-type GaN
• Anisotropic epitaxial lateral growth in GaN selective area epitaxy
• Evolution of stress relaxation and yellow luminescence in GaN/sapphire by Si incorporation
• Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells
• The process and efficiency of ultraviolet generation from gallium nitride blue light emitting diodes
• Determination of the Al mole fraction and band gap bowing of epitaxial AlGaN films
• Mg in GaN: Incorporation of a volatile species at high temperatures during molecular beam epitaxy
• Optical property of a novel (111)-oriented quantum structure
• Temperature-Dependent Absorption Measurements of Excitons in GaN Epilayers
• Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy
• Raman analysis of the longitudinal disorder in Al_xGa_1-xN films
• High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) structures
• Defect structure in selectively grown GaN films with low threading dislocation density
• Structure of GaN films grown by hydride vapor phase epitaxy
• Observation of multiple Er3 + sites in Er-implanted GaN by site-selective photoluminescence
• Low Noise p-p-n GaN Ultraviolet Photodetectors
• Spatially resolved cathodoluminescence spectra of InGaN quantum wells
• Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
• Vertical strain and doping gradients in thick GaN layers
• GaN exciton photovoltaic spectra at room temperature
• Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
• Polarity of (00·1) GaN epilayers grown on a (00·1) sapphire
• Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
• Microstructure of GaN layers grown on (001) GaAs by plasma assisted molecular-beam epitaxy
• Nucleation and growth of chemical beam epitaxy gallium nitride thin films
• Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO
• Polarization field effects on the electron-hole recombination dynamics in In[sub02]Ga[sub0. 8]N/In[sub1-X]Ga[subX]N multiple quantum wells
• Comparison of trimethylgallium and triethylgallium for the growth of GaN
• Preconditioning of c-plane sapphire for GaN epitaxy by radio frequency plasma nitridation
• Lateral Electron Current Operation of Vertical Cavity Surface Emitting Lasers with Buried Tunnel Contact Hole Sources
• The influence of inversion domains on surface morphology in GaN grown by molecular beam epitaxy
• GaN growth on Si (111) substrate using oxidized AlAs as an intermediate layer
• Atomic-scale nature of the (3x3)-ordered GaAs(001):N surface prepared by plasma-assisted molecular-beam epitaxy
• High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
• Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors
• AlGaN nanoparticle/polymer composite:synthesis, optical and structral characterization
• Effects of buffer layer on formation of domain boundaries in epilayer during film growth of GaN by low-pressure metal-organic vapor phase
• The piezoresistive effect in GaN-AlN-GaN structures
• Time-resolved photoluminescence studies of InGaN/GaN single- quantum-wells at room temperature
• Optimized growth conditions for the epitaxial nucleation of β-GaN on GaAs(001) by molecular beam epitaxy
• "Blue" temperature induced shift and band-tail emission in InGaN-based light sources
• Room temperature intrinsic optical transition in GaN epilayers: the band-to-band versus excitonic transitions
• Study of surface-emitted stimulated emission in GaN
• Determination of the band-gap energy of AlInN grown by metal-organic chemical-vapor deposition
• Carrier capture in pseudomorphically strained wurtzite GaN quantum-well lasers
• Strain determination in heteroepitaxial GaN
• Optical properties of Si-doped GaN

1998

• X-ray characterization of GaN/AlGaN multiple quantum wells for ultraviolet laser diodes
• Nature of the 2.8 eV photoluminescence band in Mg doped GaN
• Lasing Mechanism of InGaN/GaN/AlGaN multiquantum well laser diode
• Origin of Conductivity and Low-Frequency Noise in Reverse-Biased GaN p-n Junctions
• Electrical characterization of GaN/SiC n-p heterojunction diodes
• Optical properties of low band gap GaAs_(1-x)N_x layers: Infleunce of post-growth treatments
• Luminescence of as-grown and thermally annealed GaAsN/GaAs
• The incorporation of arsenic in GaN by metalorganic chemical vapor deposition
• Metalorganic molecular beam epitaxy of GaAsN with dimethylhydrazine
• Electronic properties of arsenic-doped gallium nitride
• Calculated natural band offsets of all II-VI and III-V semiconductors: chemical trends and the role of cation d orbitals
• Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
• InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
• Determination of wurtzite GaN lattice polarity based on surface reconstruction
• Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition
• Sound velocity of Al_xGaN_1-xN thin films obtained by surface acoustic-wave measurements
• GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy
• Temperature dependence of impact ionization in AlGaN-GaN Heterostructure Field Effect Transistors
• temperature dependence of impact ionization in AlGaN-GaN HEMTs
• Ultraviolet and violet GaN light emitting diodes on silicon
• Near-field optical study of InGaN/GaN epitaxial layers and quantum wells
• Coupling of GaN- and AlN-like longitudinal optic phonons in Ga1-xAlxN solid solutions
• Large band gap bowing of In_xGa_1-xN alloys
• Electrical characteristics of magnesium-doped nitride junction diodes
• Optical characterization of lateral epitaxial overgrown GaN layers
• Low Frequency Noise in GaN/GaAlN Heterojunctions
• Luminescence spectra from InGaN multiquantum wells heavily doped with Si,
• The formation of GaN dots on Al _xGa_1-xN surfaces using Si in gas-source molecular beam epitaxy
• Efficiency of NH₃ as nitrogen source for GaN molecular beam epitaxy
• Defect-induced Raman scattering in resonance with yellow luminescence transitions in hexagonal GaN on a sapphire substrate
• Phase separation in InGaN grown by metalorganic chemical vapor deposition
• Ultraviolet and violet GaN light emitting diodes on silicon
• Electron-irradiation-induced deep level in n-type GaN
• Doping of AlGaN
• Visible-Blind GaN Schottky Barrier Detectors Grown on Si(111)
• The influence of the deformation on the two-dimensional electron gas density in the GaN-AlGaN heterostructures
• Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
• Excitation density dependence of photoluminescence in GaN:Mg
• Electron Transport in AlGaN-GaN Heterostructures Grown on 6H-SiC Substrates
• Pit formation in GaInN quantum wells
• Schottky barrier photodetectors based on AlGaN
• Ultraviolet GaN light-emitting diodes grown by molecular beam epitaxy using NH3
• Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy
• Near-field scanning optical spectroscopy of an InGaN quantum well
• Optical Characterization of GaN/SiC n-p heterojunction and p-SiC
• Efficient all-optical light modulation in a piezoelectric heterostructure at room temperature
• AlGaN/GaN High Electron Mobility Field Effect Transistors with Low 1/f Noise
• Back-illuminated GaN/AlGaN heterojunction photodiodes with high quantum efficiency and low noise
• Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells
• GaN epitaxial lateral overgrowth and optical characterization
• Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy
• Thermally stable rhenium Schottky contacts to n-GaN
• GaN/Al_xGa_1-xN quantum wells grown by molecular beam epitaxy with thickness control at the monolayer scale
• Raman studies of nitrogen incorporation in GaAs_1-xN_x.
• The infrared optical functions of Al_xGa_1-xN determined from infrared reflectivity and Hall effect
• Multicolored light emitters on silicon substrates
• Determination of piezoelectric fields in GaInN strained quantum wells using the quantum-confined Stark effect
• Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy
• Spectroscopic ellipsometry characterization of (InGa)N on GaN
• Collective effects of interface roughness and alloy disorder in In_xGa_1-xN/GaN multiple quantum wells
• Structural and optical properties of pseudomorphic In_xGa_1-xN alloys
• Investigation of optically active E₁ transverse optical phonon modes in Al_xGa_1-xN layers deposited on 6H-SiC substrates using infrared reflectance
• Two-dimensional electron-gas density in Al_xGa_1–xN/GaN heterostructure field-effect transistors
• Optical band gap in GaInN (0 < x < 0.2) on GaN by photoreflection spectroscopy
• Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,
• Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates
• The origin of persistent photoconduc tivity and its relationship with yellow liminescence in molecular beam epitaxy grown undoped GaN
• Green electroluminescence from Er-doped GaN Schottky barrier diodes
• Optical properties of GaN-rich side of GaNP and GaNAs alloys grown by gas-source molecular beam epitaxy
• InGaN/GaN quantum well studied by high pressure, variable temperature, and excitation power spectroscopy
• Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment
• Incorporation of indium during molecular beam epitaxy of InGaN
• Effects of piezoelectric field on defect formation, charge transfer, and electron transport at GaN/Al_xGa_1–xN interfaces
• Ohmic Contacts Formed by Electrodeposition and Physical Vapor Deposition on p-GaN
• Piezoelectric Doping and Elastic Strain Relaxation in AlGaN/GaN Heterostructure Field Effect Transistors
• Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells
• Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence
• Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth
• Adatom Diffusion at GaN (0001) and (000-1)
• Effects of Si-Doping in the Barriers of InGaN Multiquantum Well Purplish-Blue Laser Diodes
• Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition
• Gallium Nitride whiskers formed by selective photoenhanced wet etching of dislocations
• The role of dislocation scattering in n-type GaN films
• GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy
• InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates,
• Electrical characterization of GaN p-n junctions with and without threading dislocations

1999

• Valence-band structure of wurtzite GaN including the spin-orbit interaction
• Visible cathodoluminescence of GaN doped with Dy, Er, and Tm
• Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution X-ray diffraction mapping measurements
• high voltage (450 kV) GaN Schottky rectifiers
• Low-resistance ohmic contacts to p-type GaN
• Growth and characterization of small band gap (~0. 6 eV) InGaAsN layers on InP
• Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on Si
• GaN evaporation in molecular-beam epitaxy environment
• Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures
• Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates
• Ohmic contact formation mechanism of nonalloyed Pd contacts to p-type GaN observed by positron annihilation spectroscopy
• Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells
• Lattice location of Ca in GaN using ion channeling
• Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy
• Room-temperature visible and infrared photoluminescence from Pr-implanted GaN films by focused-ion-beam direct write
• Growth of high mobility GaN by ammonia-molecular beam epitaxy
• Theoretical transport studies of p-type GaN/AlGaN modulation-doped heterostructures
• Two-step preparation of 6H–SiC(0001) surface for epitaxial growth of GaN thin film
• Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the "advancing" Al/Ti metallization
• Photoluminescence from laser assisted debonded epitaxial GaN and ZnO films
• Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor
• Deep levels in p-type InGaAsN lattice matched to GaAs
• Visible cathodoluminescence of Er-doped amorphous AlN thin films
• Lateral epitaxial overgrowth of GaN films on sapphire and silicon substrates
• InGaAsN solar cells with 1. 0 eV band gap, lattice matched to GaAs
• Influence of 6H–SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers
• Homoepitaxial Growth of GaN by Metalorganic Vapor Phase Epitaxy: A Benchmark for GaN Technology,
• Red light emission by photoluminescence and electroluminescence from Eu-doped GaN
• Annealing behavior of p-type Ga_{0. 892}In_{0. 108}N_xAs_1-x (0≤ x≤0. 024) grown by gas-source molecular beam epitaxy
• Excitons bound to nitrogen clusters in GaAsN
• Pendeo-Epitaxy of Gallium Nitride Thin Films,
• Dislocation Reduction in GaN Thin Films Via Lateral Overgrowth from Trenches,
• Blue emission from Tm-doped GaN electroluminescent devices
• Quantum-well width dependence of threshold current density in InGaN lasers,
• Erratum: "GaN evaporation in molecular beam epitaxy environment"
• Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures
• Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy
• Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
• Optical transitions in Pr-implanted GaN
• Inversion of wurtzite GaN(0001) by exposure to magnesium

2000

• Arsenic impurities in GaN
• Electronic states and band alignment in GaInNAs/GaAs quantum well structures with low nitrogen composition
• Temperature dependence of band gap energies of GaAsN alloys
• Low-voltage GaN:Er green electroluminescent devices
• Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu
• Enhanced quality of epitaxial AlN thin films on 6H-SiC by ultra-high vacuum ion-assisted reactive dc magnetron sputter deposition
• Time-resolved photoluminescence studies of In_xGa_1-xAs_1-yN_y
• Evidence of strong carrier localization below 100K in GaInNAs/GaAs single quantum well
• Evidence of an oxygen recombination center in p⁺-n GaInNAs solar cells
• Large, nitrogen-induced increase of the electron effective mass in In_yGa_1-yN_xAs_1-x
• Selective enhancement of 1540 nm Er3+ emission centers in Er-implanted GaN by Mg
• Interband luminescence and absorption of GaNAs/GaAs single quantum well structures
• Local structure and bonding of Er in GaN: A contrast with Er in Si
• Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg
• AlGaN–GaN–AlInGaN induced base transistor
• Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering
• From N isoelectronic impurities to N-induced bands in the undoped GaN_xAs_1-x alloy
• In-situ, Real-Time Measurement of Wing Tilt During Lateral Epitaxial Overgrowth of GaN,
• Solar-Blind AlGaN Photodiodes with Very Low Cutoff Wavelength
• Self-Organized Propagation of Dislocations in GaN Films During Epitaxial Lateral Overgrowth,
• Characterization of InGaN thin films using high-resolution x-ray diffraction
• Time-resolved study of yellow and blue luminescence in Si- and Mg-doped GaN
• Photoluminescence and cathodoluminescence of GaN doped with Tb
• Epitaxial growth of AlN and Al_{0. 5}Ga_{0. 5}N layers on aluminum nitride substrates
• Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy
• AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
• Nitrogen dependence of the GaAsN interband critical points E₁ and E₁+Δ₁ determined by spectroscopic ellipsometry
• Direct determination of electron effective mass in GaNAs/GaAs quantum wells
• Phonon Lifetimes in BulkAlN and Their Temperature Dependence
• Mechanism for rapid thermal annealing improvements in undoped GaN_xAs_1-x/GaAs structures grown by molecular beam epitaxy
• Enhancement of cathodoluminescent and photoluminescent properties of Eu:Y2O3 luminescent films by vacuum cooling
• Identification of the Γ₅ and Γ₆ free excitons in GaN
• Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy
• Solar-Blind AlGaN-Based Inverted Heterostructure Photodiodes
• Alternating current thin-film electroluminescence of GaN:Er
• Control of polarity of ZnO films grown by plasma-assited molecular beam epitaxy: Zn- and O-polar ZnO films on Ga-polar GaN templates
• Visible emission from electroluminescent devices using an amorphous AlN:Er3 + thin-film phosphor
• Dependence of Crystallographic Tilt and Defect Distribution on Mask Material in Epitaxial Lateral Overgrown GaN Layers,
• Luminescence properties of GaN and Al0.14Ga0.86N/GaN superlattice doped with europium
• Origin of hexagonal-shaped etch pits formed in (0001) GaN films
• Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells
• Emission properties of an amorphous AlN:Cr3 + thin-film phosphor

2001

• Optical properties of GaN grown by hydride vapor-phase epitaxy
• Band alignment at a ZnO/GaN (0001) heterointerface
• Catalytic role of Au in Ni/Au contact on GaN(0001)
• Role of Ga-flux in dislocation reduction in GaN films grown on SiC(0001)

97

• Femtosecond studies of carriers dynamics in InGaN.

last updated Thursday, February 14, 2002 1:44:27 PM.
© 2001 The Materials Research Society