Data for reference wang-apl-81-4703

Fabrication of an InGaN multiple-quantum-well laser diode featuring high reflectivity semiconductor/air distributed Bragg reflectors

H. Wang, M. Kumagai, T. Tawara, T. Nishida, T. Akasaka, N. Kobayashi, T. Saitoh

Applied Physics Letters 81, 4703 (2002).

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This item is cited by the following items in the database:

  1. Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures

Contributed by A submitted manuscript, on Monday, April 26, 2004 5:26:56 PM

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