Data for reference hansen-apl-81-4275

Higher efficiency InGaN laser diodes with an improved quantum well capping configuration

M. Hansen, J. Piprek, P. M. Pattison, J. S. Speck, S. Nakamura, S. P. DenBaars

Applied Physics Letters 81, 4275 (2002).

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This item is cited by the following items in the database:

  1. Low dislocation density, high power InGaN laser diodes

Contributed by A submitted manuscript, on Tuesday, December 16, 2003 2:50:53 PM

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