Data for reference koleske-apl-81-1940

Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence

D. D. Koleske, A. J. Fischer, A. A. Allerman, C. C. Mitchell, K. C. Cross, S. R. Kurtz, J. J. Figiel, K. W. Fullmer, W. G. Breiland, Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence

Applied Physics Letters 81, 1940 (2002).

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Contributed by A submitted manuscript, on Thursday, November 7, 2002 11:11:03 AM


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