Data for reference ng-apl-80-4369

Molecular-beam epitaxy of GaN/Al[sub x]Ga[sub 1 - x]N multiple quantum wells on R-plane (101-bar 2) sapphire substrates

H. M. Ng

Applied Physics Letters 80, 4369 (2002).

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This item is cited by the following items in the database:

  1. P- and N-type Doping of Non-Polar A-plane GaN Grown by Molecular-Beam Epitaxy on R-plane Sapphire

Contributed by A submitted manuscript, on Tuesday, August 5, 2003 11:45:30 AM

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