Data for reference haffouz-apl-79-2390

Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment

S. Haffouz, V. Kirilyuk, P. R. Hageman, L. Macht, J. L. Weyher, P. K. Larsen

Applied Physics Letters 79, 2390 (2001).

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This item is cited by the following items in the database:

  1. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Contributed by A submitted manuscript, on Thursday, November 7, 2002 11:10:36 AM

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