Data for reference tang-apl-78-757

Properties of carbon-doped GaN

H. Tang, J. B. We bb, J. A. Bardwell, Raymond, Joseph Salzman, C. Uzan-Saguy

Applied Physics Letters 78, 757 (2001).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications

Contributed by A submitted manuscript, on Thursday, August 7, 2003 5:40:11 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, May 4, 2005 11:09:26 AM.
© 1998 The Materials Research Society