Data for reference lefebvre-apl-78-1252

High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

P. Lefebvre, A. Morel, M. Gallart, T. Taliercio, J. Allegre, B. Gil, H. Mathieu, B. Damilano, N. Grandjean, J. Massies

Applied Physics Letters 78, 1252 (2001).

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This item is cited by the following items in the database:

  1. Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells

Contributed by A submitted manuscript, on Thursday, August 29, 2002 6:46:02 PM

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