Data for reference tomiya-apl-77-636

Dependence of Crystallographic Tilt and Defect Distribution on Mask Material in Epitaxial Lateral Overgrown GaN Layers,

S. Tomiya, K. Funato, T. Asatsuma, T. Hino, S. Kijima, T. Asano, M. Ikeda

Applied Physics Letters 77, 636 (2000).

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This item is cited by the following items in the database:

  1. Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates

Contributed by A submitted manuscript, on Tuesday, September 25, 2001 6:27:17 PM

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