Data for reference visconti-apl-77-3532

Dislocation density in GaN determined by photoelectrochemical and hot-wet etching

P. Visconti, K. M. Jones, M. A. Reshchikov, R. Cingolani, H. Morkoç, R. J. Molnar

Applied Physics Letters 77, 3532 (2000).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Wet Chemical Etching of AlN Single Crystals

Contributed by D. Zhuang from 129.130.46.230 on Friday, May 3, 2002 12:03:28 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, May 4, 2005 11:08:49 AM.
© 1998 The Materials Research Society