heying-apl-77-2885

Data for reference heying-apl-77-2885

Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy

B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. Den Baars, U. Mishra, J. S. Speck

Applied Physics Letters 77(18), 2885 (2000).

The authors report the highest room temperature electron mobility (1191 cm²V^-1s^-1) of GaN grown by rf-plasma assisted molecular beam epitaxy.

This item is cited by the following items in the database:

Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers

Contributed by A submitted manuscript, on Friday, November 24, 2000 7:17:47 PM

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