Data for reference pozina-apl-77-1638

InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport

G. Pozina, J. P. Bergman, B. Monemar, M. Iwaya, S. Nitta, H. Amano, I. Akasaki

Applied Physics Letters 77, 1638 (2000).

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This item is cited by the following items in the database:

  1. Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells

Contributed by A submitted manuscript, on Thursday, August 29, 2002 6:49:00 PM

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