Data for reference khan-apl-77-1339

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

M. A. Khan, X. Hu, A. Tarakji, G. Simin, J. Yang, R. Gaska, M. S. Shur

Applied Physics Letters 77, 1339 (2000).

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This item is cited by the following items in the database:

  1. Room Temperature Ohmic contact on n-type GaN using plasma treatment

Contributed by A submitted manuscript, on Wednesday, February 14, 2001 11:58:38 AM

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