Data for reference xie-apl-77-1105

Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy

M. H. Xie, L. X. Zheng, S. H. Cheung, Y. F. Ng, H. Wu, S. Y. Tong, N. Ohtani

Applied Physics Letters 77, 1105 (2000).

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This item is cited by the following items in the database:

  1. Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)

Contributed by A submitted manuscript, on Wednesday, January 16, 2002 6:31:42 PM

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