Data for reference schowalter-apl-76-985

Epitaxial growth of AlN and Al0. 5Ga0. 5N layers on aluminum nitride substrates

L. J. Schowalter, Y. Shusterman, R. Wang, I. Bhat, G. Arunmozhi, G. A. Slack

Applied Physics Letters 76, 985 (2000).

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This item is cited by the following items in the database:

  1. New Technique for Sublimation Growth of AlN Single Crystals
  2. Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates

Contributed by A submitted manuscript, on Thursday, February 22, 2001 1:59:47 PM

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