Data for reference li-apl-76-1740Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy
L. K. Li, M. J. Jukovic, W. I. Wang, J. M. Van Hove, P. P. Chow
Applied Physics Letters 76, 1740 (2000).
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- P- and N-type Doping of Non-Polar A-plane GaN Grown by Molecular-Beam Epitaxy on R-plane Sapphire
- Review of polarity determination and control of GaN
Contributed by A submitted manuscript, on Thursday, September 4, 2003 5:26:56 PM
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