Data for reference wang-apl-76-1737

Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures

T. Wang, H. Saeki, J. Bai, T. Shirahama, M. Lachab, S. Sakai, P. Eliseev

Applied Physics Letters 76, 1737 (2000).

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This item is cited by the following items in the database:

  1. Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells

Contributed by A submitted manuscript, on Thursday, August 29, 2002 6:48:45 PM

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