Data for reference buneau-apl-75-838Time-resolved photoluminescence studies of free and donor-bound exciton in GaN grown by hydride vapor phase epitaxy
G. E. Buneau, W. D. Herzog, M. S. Ünlü, B. B. Goldberg, R. J. Molnar
Applied Physics Letters 75, 838 (1999).
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- Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
Contributed by A submitted manuscript, on Thursday, November 7, 2002 11:12:11 AM
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