Data for reference ramachandran-apl-75-808

Inversion of wurtzite GaN(0001) by exposure to magnesium

V. Ramachandran, R. M. Feenstra, W. L. Sarney, L. Salamanca-Riba, J. E. Northrup, L. T. Romano, D. W. Greve

Applied Physics Letters 75, 808 (1999).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Modeling GaN Growth by Plasma Assisted MBE in the Presence of Low Mg Flux
  2. Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces
  3. Review of polarity determination and control of GaN

Contributed by A submitted manuscript, on Thursday, August 16, 2001 2:47:21 PM


If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.


MRS Internet Journal of Nitride Semiconductor Research

last updated Monday, May 2, 2005 4:45:11 PM.
© 1998 The Materials Research Society