Data for reference brandt-apl-75-4019

Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy

O. Brandt, R. Muralidharan, P. Waltereit, A. Thamm, A. Trampert, H. von Kiedrowski, K. H. Ploog

Applied Physics Letters 75, 4019 (1999).

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This item is cited by the following items in the database:

  1. Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)

Contributed by A submitted manuscript, on Wednesday, January 16, 2002 6:31:28 PM

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