Data for reference kuznetsov-apl-75-3138

Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates

N. I. Kuznetsov, A. E. Nikolaev, A. S. Zubilov, Yu. V. Melnik, V. A. Dmitriev

Applied Physics Letters 75, 3138 (1999).

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This item is cited by the following items in the database:

  1. Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications

Contributed by A submitted manuscript, on Thursday, August 7, 2003 5:40:03 PM

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