Data for reference kirchner-apl-75-1098

Homoepitaxial Growth of GaN by Metalorganic Vapor Phase Epitaxy: A Benchmark for GaN Technology,

C. Kirchner, V. Schwegler, F. Eberhard et al

Applied Physics Letters 75, 1098 (1999).

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This item is cited by the following items in the database:

  1. Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates

Contributed by A submitted manuscript, on Tuesday, November 20, 2001 7:10:09 PM

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