Data for reference torres-apl-74-985

Influence of 6H–SiC(0001) substrate surface morphology on the growth of AlN epitaxial layers

V. M. Torres, J. L. Edwards, B. J. Wilkens, D. J. Smith, R. B. Doak, I. S. T. Tsong

Applied Physics Letters 74, 985 (1999).

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This item is cited by the following items in the database:

  1. Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)

Contributed by A submitted manuscript, on Wednesday, January 16, 2002 6:31:00 PM

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