Data for reference tang-apl-74-2373

Growth of high mobility GaN by ammonia-molecular beam epitaxy

H Tang, JB Webb

Applied Physics Letters 74(16), 2373 (1999).

The authors report the highest room temperature mobility of GaN grown by ammonia-molecular beam epitaxy.

This item cites the following items in the database:

  1. Growth of high mobility GaN by ammonia-molecular beam epitaxy

This item is cited by the following items in the database:

  1. Growth of high mobility GaN by ammonia-molecular beam epitaxy
  2. Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers

Contributed by W.K. Fong from 158.132.12.18 on Wednesday, October 11, 2000 10:56:01 PM

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