Data for reference skromme-apl-74-2358

Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy

B. J. Skromme, J. Jayapalan, R. P. Vaudo, V. M. Phanse

Applied Physics Letters 74, 2358 (1999).

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This item is cited by the following items in the database:

  1. Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
  2. Free excitons in strained MOCVD-grown GaN layers

Contributed by A submitted manuscript, on Friday, October 8, 1999 3:42:23 PM

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