Data for reference grandjean-apl-74-1854

GaN evaporation in molecular-beam epitaxy environment

N. Grandjean, J. Massies, F. Semond, S. Yu. Karpov, R. A. Talalaev

Applied Physics Letters 74(13), 1854 (1999).

The authors report on results of direct measurements of GaN evaporation rate and calculations made in terms of kinetic model

This item is cited by the following items in the database:

  1. The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
  2. Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces

Contributed by A submitted manuscript, on Tuesday, May 4, 1999 9:58:06 AM

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